Characterization of the photothermal interaction of a semiconducting solid sphere due to the mechanical damage, ramp-Type heating, and rotation under L-S theory

Abstract

In the present investigation, we constructed a novel mathematical model of a one-dimensional thermoelastic semiconducting solid sphere based on the L-S model to study the photothermal interaction. Within this work, we applied two considerations: the mechanical damage variable, and rotation with constant speed. The bounding surface of the sphere has been thermally loaded by ramp-type heating. Laplace transform has been applied, and its inversions have been computed numerically. The numerical results of the temperature increment, carrier density increment, strain, displacement, stress, have been represented in figures with various values of the damage mechanics variable, ramping time parameter, and rotation angular velocity parameter. The ramping time parameter has significant effects on all the studied functions, while the damage and rotation have limited effects on the thermal waves and significant effects on the mechanical waves.

KEYWORDS:

• Generalized thermoelasticity
• solid sphere
• damage mechanics
• photothermal
• carrier density

Disclosure statement

No potential conflict of interest was reported by the author(s).