Transmission phenomenon at the interface between isotropic and semiconductor nanostructure based on nonlocal theory

Abstract

In this article, we analyzed the response of elastic waves after striking the interface between two elastic mediums. The upper-medium is isotropic while the lower medium is semiconductor nanostructure in nature. Both the mediums are set on rotation with some fix angular frequency $\mathbf{\Omega }$. A fractional ordered heat conduction model of three-phase lag along with the nonlocal theory of elasticity is adopted to formulate the problem. The incident wave after striking the interface results in five coupled quasireflected waves and three elastic transmitted waves. The ratios of the amplitude of reflection and transmitted waves with incident wave are calculated. Variations in obtained amplitude ratios with respect to incident angle have been shown graphically for silicon (Si) semiconductor. The effects of nonlocal parameter, rotational frequency and fractional order parameter on the reflection and transmitted coefficients in the presence of voids parameters are studied. The results obtained through the current analysis may be applicable in the field of seismology and semiconductors nanostructure appliances.

KEYWORDS:

• Transmission
• reflection
• three phase thermo-elastic lag model
• fractionally ordered time derivative
• nonlocal theory
• semiconductor
• void

Disclosure statement

No potential conflict of interest was reported by the author(s).