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Articles

Deep insight on efficiency of deposited energy within sensitive volumes for characterizing basic mechanism of single event upset saturated cross-section regarding implicit inaccuracy

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Pages 1433-1448 | Received 28 Jun 2023, Accepted 02 Sep 2023, Published online: 19 Sep 2023

References

  • Black, J.D.; Dame, J.A.; Black, D.A.; Dodd, P.E.; Shaneyfelt, M.R.; Teifel, J.; Salas, J.G.; Steinbach, R.; Davis, M.; Reed, R.A.; Weller, R.A.; Trippe, J.M. Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts. IEEE Trans. Nucl. Sci. Jan. 2019, 66 (1), 233–239.
  • Dodd, P.E. Physics-Based Simulation of Single-Event Effects. IEEE Trans. Device Mater. Reliab. Sept. 2005, 5 (3), 343–357.
  • Weller, R.A.; Mendenhall, M.H.; Reed, R.A.; Schrimpf, R.D.; Warren, K.M.; Sierawski, B.D.; Massengill, L.W. Monte Carlo Simulation of Single Event Effects. IEEE Trans. Nucl. Sci. Aug. 2010, 57 (4), 1726–1746.
  • Lei, Y.; Fang, J.; Zhang, B. “TCAD simulation of single-event transient and hardening in 700 V LDMOS transistors,” in Proceedings of ICCSS, Nanjing, People’s Republic of China, 2022.
  • Ding, L.; Chen, W.; Wang, T.; Chen, R.; Luo, Y.; Zhang, F.; Pan, X.; Sun, H.; Chen, L. Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation. IEEE Trans. Nucl. Sci. June 2019, 66 (6), 866–874.
  • Li, R.; Li, J.; Wang, C.; He, C.; Chen, W; Jin, X.; Qi, C.; Bai, X.; Liu, Y.; Wang, G. “Transient radiation effects in several types of LDO,” in Proceedings of ICREED, Xi’an, People’s Republic of China, 2021.
  • Balbekov, A.O.; Gorbunov, M.S.; Zebrev, G.I. Circuit-Level Layout-Aware Modeling of Single Event Effects in 65 nm CMOS ICs. IEEE Trans. Nucl. Sci. August 2018, 65 (8), 1914–1919.
  • Matt Francis, A.; Dimitrov, D.; Kauppila, J.; Sternberg, A.; Alles, M.; Holmes, J.; Mantooth, H.A. Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets. IEEE Trans. Nucl. Sci. 2009, 56 (6), 3109–3114.
  • Kauppila, J.S.; Haeffner, T.D.; Ball, D.R.; Kauppila, A.V.; Loveless, T.D.; Jagannathan, S.; Sternberg, A.L.; Bhuva, B.L.; Massengill, L.W. Circuit-level Layout-Aware Single-Event Sensitive-Area Analysis of 40-nm Bulk CMOS Flip-Flops Using Compact Modeling. IEEE Trans. Nucl. Sci. 2011, 58 (6), 2680–2686.
  • Warren, K.M.; Weller, R.A.; Mendenhall, M.H.; Reed, R.A.; Ball, D.R.; Howe, C.L.; Olson, B.D.; Alles, M.L.; Massengill, L.W.; Schrimpf, R.D.; Haddad, N.F.; Doyle, S.E.; McMorrow, D.; Melinger, J.S.; Lotshaw, W.T. The Contribution of Nuclear Reactions to Heavy ion Single Event Upset Cross-Section Measurements in a High-Density SEU Hardened SRAM. IEEE Trans. Nucl. Sci. Dec. 2005, 52 (6), 2125–2131.
  • Reed, R.A.; Weller, R.A.; Schrimpf, R.D.; Mendenhall, M.H.; Warren, K.M.; Massengill, L.W. Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis. IEEE Trans. Nucl. Sci. Dec. 2006, 53 (6), 3356–3362.
  • Clemens, M.A.; Dodds, N.A.; Weller, R.A.; Mendenhall, M.H.; Reed, R.A.; Schrimpf, R.D.; Koi, T.; Wright, D.H.; Asai, M. The Effects of Nuclear Fragmentation Models on Single Event Effect Prediction. IEEE Trans. Nucl. Sci. Dec. 2009, 56 (6), 3158–3164.
  • Howe, C.L.; Weller, R.A.; Reed, R.A.; Mendenhall, M.H.; Schrimpf, R.D.; Warren, K.M.; Ball, D.R.; Massengill, L.W.; LaBel, K.A.; Howard, J.W.; Haddad, N.F. Role of Heavy-Ion Nuclear Reactions in Determining on-Orbit Single Event Error Rates. IEEE Trans. Nucl. Sci. Dec. 2005, 52 (6), 2182–2188.
  • Kobayashi, A.S.; Ball, D.R.; Warren, K.M.; Reed, R.A.; Haddad, N.; Mendenhall, M.H.; Schrimpf, R.D.; Weller, R.A. The Effect of Metallization Layers on Single Event Susceptibility. IEEE Trans. Nucl. Sci. Dec. 2005, 52 (6), 2189–2193.
  • Clemens, M.A.; Hooten, N.C.; Ramachandran, V.; Dodds, N.A.; Weller, R.A.; Mendenhall, M.H.; Reed, R.A.; Dodd, P.E.; Shaneyfelt, M.R.; Schwank, J.R.; Blackmore, E.W. The Effect of High-Z Materials on Proton-Induced Charge Collection. IEEE Trans. Nucl. Sci. Dec. 2010, 57 (6), 3212–3218.
  • Heidel, D.F.; Marshall, P.W.; LaBel, K.A.; Schwank, J.R.; Rodbell, K.P.; Hakey, M.C.; Berg, M.D.; Dodd, P.E.; Friendlich, M.R.; Phan, A.D.; Seidleck, C.M.; Shaneyfelt, M.R.; Xapsos, M.A. Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM. IEEE Trans. Nucl. Sci. Dec. 2008, 55 (6), 3394–3400.
  • Raine, M.; Hubert, G.; Gaillardin, M.; Paillet, P.; Bournel, A. Monte Carlo Prediction of Heavy ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile. IEEE Trans. Nucl. Sci. Dec. 2011, 58 (6), 2607–2613.
  • Berger, G.; Moreno Hagelsieb, L.; Martinez, I.; Akheyar, A.; Harboe Sorensen, A.; Ryckewaert, G.; Flandre, D. “Edge effects and tilt dependency of heavy ion irradiation SEE characterization in PN junctions,” in Proceedings of RADECS, Padova, Italy, 2022.
  • Pickel, J.C. Single-event Effects Rate Prediction. IEEE Trans. Nucl. Sci. April 1996, 43 (2), 483–495.
  • Petersen, E.L. Predictions and Observations of SEU Rates in Space. IEEE Trans. Nucl. Sci. Dec. 1997, 44 (6), 2174–2187.
  • Reed, R.A.; Kinnison, J.; Pickel, J.C.; Buchner, S.; Marshall, P.W.; Kniffin, S.; LaBel, K.A. Single-Event Effects Ground Testing and on-Orbit Rate Prediction Methods: The Past, Present, and Future. IEEE Trans. Nucl. Sci. June 2003, 50 (3), 622–634.
  • Geng, C.; Liu, J.; Zhang, Z.; Hou, M.; Sun, Y.; Xi, K.; Gu, S.; Duan, J.; Yao, H.; Mo, D.; Luo, J. Monte Carlo Simulation Based on Geant4 of Single Event Upset Induced by Heavy Ions. Sci. China Phys. Mech. Astron. May 2013, 56, 1120–1125.
  • Geng, C.; Liu, J.; Xi, K.; Zhang, Z.-G.; Gu, S.; Hou, M.-D.; Sun, Y.-M.; Duan, J.-L.; Yao, H.-J.; Mo, D. Monte Carlo Evaluation of Spatial Multiple-Bit Upset Sensitivity to Oblique Incidence. Chin. Phys. B 2013, 22 (5), 1–8.
  • Geng, C.; Liu, J.; Xi, K.; Zhang, Z.-G.; Gu, S.; Liu, T.-Q. Modeling and Assessing the Influence of Linear Energy Transfer on Multiple Bit Upset Susceptibility. Chin. Phys. B 2013, 22 (10), 1–6.
  • Gu, S.; Liu, J.; Zhao, F.; Zhang, Z.; Bi, J.; Geng, C.; Hou, M.; Liu, G.; Liu, T.; Xi, K. Influence of Edge Effects on Single Event Upset Susceptibility of SOI SRAMs. Nucl. Instrum. Methods B 2015, 342, 286–291.
  • King, M.P.; Reed, R.A.; Weller, R.A.; Mendenhall, M.H.; Schrimpf, R.D.; Alles, M.L.; Auden, E.C.; Armstrong, S.E.; Asa, M. The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs. IEEE Trans. Nucl. Sci. Dec. 2010, 57 (6), 3169–3175.
  • Raine, M.; Hubert, G.; Gaillardin, M.; Artola, L.; Paillet, P.; Girard, S.; Sauvestre, J.-E.; Bournel, A. Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node. IEEE Trans. Nucl. Sci. June 2011, 58 (3), 840–847.

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