References
- L. Stuchlikova, D. Buc, L. Harmatha, U. Helmersson, W. H. Chang, I. Bello. Deep energy levels in RuO2/4H–SiC Schottky barrier structures. Appl Phys Lett, 2006, 88, 153509.
- D. Buc, L. Stuchlikova, U. Helmersson, W. H. Chang, I. Bello. Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopy. Chem Phys Lett, 2006, 429, 617–621.
- D. Buc, L. Stuchlikova, L. Harmatha, I. Hotovy. Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts. J Mater Sci Mater Electron, 2008, 19, 783–787.
- S. Roy, C. Jacob, M. Zhang, S. Wang, A. K. Tyagi, S. Basu. SIMS, RBS and glancing incidence X-ray diffraction studies of thermally annealed Ru/β-SiC interfaces. Appl Surf Sci, 2003, 211, 300–307.
- A. Venter, M. E. Samiji, A. W. R. Leitch. Thermal stability of Ru, Pd and Al Schottky contacts to p-type 6H-SiC. Phys Stat Sol C, 2004, 1, 2264–2268.
- A. Venter, M. E. Samiji, A. W. R. Leitch. Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H–SiC. Diamond Relat Mater, 2004, 13, 1166–1170.
- K. V. Munthali, C.. Theron, F. D. Auret, S. M. M. Coelho, E. Njoroge, L. Prinsloo. Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes. Mater Sci Eng B, 2014, 181, 9–15.
- J. Ahn, W. Choi, W. Lee, H. Kim. Annealing of RuO2 and Ru bottom electrodes and its effect on the electrical properties of (Ba, Sr)TiO3 thin films. Jap J Appl Phys, 1998, 37, 284–289.
- E. V. Jelenkovic, K. Y. Tong. Thermally grown ruthenium oxide thin films. J Vacuum Sci Technol B, 2004, 22, 2319.
- M. M. Steeves. Electronic transport properties of ruthenium and ruthenium oxide thin films. University of Maine, November 2011.
- A. G. BirdwellOptical properties of β-FeSi2, Ru2Si3, and OsSi 2: semiconducting silicides. The University of Texas at Dallas, September 2001.
- M. Chafai, A. Jaouhari, A. Torres, R. Anton, E. Martin, J. Jimenez, W.C. Mitchel. Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H–SiC. J Appl Phys, 2001, 90, 5211.
- S. M. Sze. Semiconductor devices physics technology. John Wiley & Sons, New York, 2002.
- The Ioffe Physico-Technical Institute. Band structure and carrier concentration of Silicon Carbide. (accessed 25 April, 2013).
- E. Stuchlikova, L. Harmatha, D. Buic, J. Benkovska, B. Hlinka, G. G. Siu. 4H-SiC Diode with a RuOX and a RuWOX Schottky Contact Irradiated by Fast Electrons. IEEE, 2006.
- S. Y. Han, J. Lee. Characteristics of Schottky contacts on n-type 4H–SiC using IrO2 and RuO2. J Appl Phys, 2003, 94, 6159.
- J. Osvaldy, E. Dobrockaz. Generalized approach to the parameter extraction from I –V characteristics of Schottky diodes. Semiconductor Sci Technol, 1996, 11, 1198–1202.
- F. La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno. Microelectron Eng, 2002, 60, 269–282.