Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect

Abstract

In this paper, the RF and analog performances of the triple material gate (TMG) step Fin (SF) FinFET, step drain (SD) FinFET, and step source (SS) FinFET have been explored by 3D TCAD simulation. We have simulated the performance in the presence of uniform trap (UT) and Gaussian trap (GT) distribution with a fixed value of trap concentration (10¹² eV⁻²cm⁻²). The various DC parameters, such as threshold voltage (V_th), sub-threshold swing (SS), and switching ratio, are observed in trap distribution. The outcome of this simulation study is that the SF FinFET structure has shown 25.1% and 33.95% enhancement of drive current compared to SD FinFET and SS FinFET, respectively. On the other hand, SS FinFET has shown an enhancement of 1.2x(9.8x) on gain transconductance frequency product (GTFP), 1.21x(1.01x) of transconductance frequency product (TFP), 4.19x(23.28x) of intrinsic gain (A_v), 1.88x(21.21x) of gain frequency product (GFP), and 4.18x(9.69x) of the gain-bandwidth product (GBP) compared to SD FinFET (SF FinFET).

KEYWORDS:

• Gain frequency product (GFP)
• Gain transconductance frequency product (GTFP)
• Sub-threshold swing (SS)
• Transconductance frequency product (TFP)
• Triple material gate (TMG)

ACKNOWLEDGEMENTS

The authors would like to thank Dr. Suman Kumar Mitra, Assistant professor, Department of Electronics Engineering, HBTU, Kanpur, India, for the support. They would like to thank also the National Institute of Technology, Agartala, India, for the logistic support.

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Rinku Rani Das

Rinku Rani Das received a BE degree in electronics and telecommunication engineering from the Tripura Institute of Technology College, Tripura, India, in 2013, and an MTech degree in mobile communication and computing from the National Institute of Technology Arunachal Pradesh, India, in 2017. She is currently pursuing a PhD degree with the Department of Electronics and Communication Engineering, National Institute of Technology. Agartala, India. Corresponding author. Email: [email protected]

Santanu Maity

Santanu Maity received an MTech in radio-physics and electronics, Institute of Radio-physics and Electronics, University College of Science & Technology, CU, 2009 and a PhD in optoelectronics device (Solar cell), National Institute of Technology, AP (University), 2016. He is working as assistant professor in the Department of Electronics and Communication Engineering, Indian Institute of Engineering Science and Technology, Shibpur, India. His research interests include solar cells, RF-MEMS, antenna, high-speed semiconductor devices, and semiconductor gas sensors. Email: [email protected]

Atanu Chowdhury

Atanu Chowdhury received a BE degree from the National Institute of Technology (Formerly Tripura Engineering College), Agartala, Tripura, India, in 2000, and an ME degree from Jadavpur University, Kolkata, India, in 2003. He obtained his PhD degree from the National Institute of Technology, Agartala, Tripura, India, in 2018. He is assistant professor with the Department of Electronics and Communication Engineering, National Institute of Technology, Agartala, India. Email: [email protected]

Apurba Chakraborty

Apurba Chakraborty received a BTech degree from the Sarder Patel University, Gujarat, India, in 2008 and an MTech degree from IIITDM Jabalpur, India. in 2012. He obtained his PhD degree from the Indian Institute of Technology, Kharagpur, India, in 2018. He is currently assistant professor with the Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Goa, India. Email: [email protected]