Evaluation of Photodetection Properties of Graphene-Silicon Schottky IR Detector

ABSTRACT

We evaluated the photodetection properties and external quantum efficiency of graphene-silicon Schottky photodetector under IR illumination for 700 nm, 1.1 μm, 2 μm, and 3.5 μm wavelengths at room temperature. The graphene-Si Schottky diode has been fabricated by depositing mechanically exfoliated HOPG on top of the pre-patterned silicon substrate. Finally, the measurements were done on the (I-V) curves of the junction to calculate photocurrent at low voltage which is of the great practical interest. We show that our graphene-Si Schottky detector can detect the IR illuminations at lower voltages than previously published work.

KEYWORDS:

• Graphene
• Schottky diode
• photoconductive detector
• responsivity

Acknowledgments

The authors acknowledge the assistance of Hamed Mehrara and Mahdi Khaje from K. N. Toosi University of Technology and Abbas Ghassemi from Islamic Azad University, Tehran Central Branch and Naser Jafarzade from Raman Spectroscopic Laboratory from Tarbiat Modares University.