https://orcid.org/0000-0003-0231-4145
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Abstract
Metal–insulator–metal (MIM) thin-film capacitors having different dielectric layer thicknesses have been fabricated by forming bovine serum albumin (BSA) layers on electrically conductive and optically transparent indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by using spin coating technique; the metal contacts at the top surface of BSA films have been deposited via thermal evaporation of gaseous phase aluminum. The capacitance-voltage (CV) measurements reveal the fact that the CV-characteristics of the BSA-based MIM capacitors show variable non-linearity with the change in the thickness of the insulating layer (BSA-layer). The experimentally measured CV-data are fitted with 2nd degree polynomial equations and it has been found that the quadratic voltage coefficient of capacitance (VCC) changes its sign from negative to positive as the thickness of the BSA-layer reduced below 2.0 µm. Finally, successful mechanical flexibility tests, as well as curvature tests have been carried out in order to confirm the possibility of using BSA-based MIM thin-film capacitors in flexible electronic applications in near future.
DISCLOSURE STATEMENT
No potential conflict of interest was reported by the authors.
Acknowledgements
Prajukta Mukherjee would like to thank the National Institute of Science and Technology, Berhampur, Odisha, India, for the NIST Summer Research Internships and Fellowships – 2019 from June 2019 to August 2019 for carrying out the present work under Dr. Sandipan Mallik.
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Notes on contributors
Prajukta Mukherjee
Prajukta Mukherjee was born in 1997. She received her BTech degree in electrical engineering from Cooch Behar Government Engineering College, West Bengal, India, in the year 2020. Her research interests are signal processing and high frequency semiconductor devices.Email: [email protected]
Aritra Acharyya
Aritra Acharyya was born in 1986. He received BE (Electronics and Telecommunication Engineering) and MTech (Radio Physics and Electronics) degrees from IIEST, Shibpur, India, and Institute of Radio Physics and Electronics, University of Calcutta, India, in the years 2007 and 2010, respectively. Finally, he obtained a PhD degree from the Institute of Radio Physics and Electronics, University of Calcutta, in the year 2016. He is currently working as an assistant professor of Electronics and Communication Engineering Department at Cooch Behar Government Engineering College, West Bengal. His research interests are high frequency semiconductor devices. He has published more than 140 research papers in peer reviewed journals and conference proceedings. Corresponding author. Email: [email protected]
Sandipan Mallik
Sandipan Mallik received Bachelor of Science and Master of Science degrees in physics from Vidyasagar University, West Bengal, India and Guru Ghasidas Central University, Bilaspur, India, in the years 2004 and 2007, respectively. Finally, he obtained PhD (Engg.) degree from Jadavpur University, Kolkata, India, in the year 2014. He is currently working as an associate professor of the Electronics and Communication Engineering Department, National Institute of Science and Technology, Berhampur, Odisha, India. His research interests are fabrication and characterization of semiconductor devices, thin film physics and technologies, fabrication and characterization of MOS and MIM capacitors, inorganic and bio-memristors, inorganic heterojunction solar cells, anodic porous alumina template for nanofabrication, etc. Email: [email protected]