Demonstration of Temperature-Dependent Analysis of GAA – β-(AlGa)₂O₃/Ga₂O₃ High Electron Mobility Transistor

Abstract

In this work, we have, designed and demonstrated Gate all around (GAA)-β-AGO/GO HEMT to achieve large current density, electron mobility and electron velocity at cryogenic temperatures. Because the controlling of the gate is better in GAA-based structures the performance of the proposed device is magnified for a different temperature range. The 2DEG channel mobility of the proposed device is boosted from 130 cm²/Vs at 300 K to 4100 cm²/Vs at 50 K. Mobility of the proposed device is boosted from the previous value by the factor of 2.5 at room temperature. The higher electron mobility at lower temperatures made it suitable to reach a larger saturation velocity center of the channel. Analog, RF and linearity parameters are analyzed with different temperature ranges at a gate length of 0.9 µm. The drain current and cutoff frequency of the device is 750 mA/mm and 18 GHz, respectively at 50 K and it reduces for a larger temperature. The breakdown voltage of the proposed device at 300 K is 139 V. The noise analysis is also taken for the investigation of its random nature. This type of device is used in power-switching applications.

KEYWORDS:

• Gallium oxide (GO) Aluminum Gallium oxide (AGO)
• Gate all around (GAA)
• Delta doping
• High electron mobility transistor (HEMT)

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

Ravi Ranjan

Ravi Ranjan was born in India in 1988. He received his BE from Bhiwani Institute of Technology and Sciences, Bhiwani, in 2010, an MTech in VLSI design from the Centre for Development of Advanced Computing, Mohali, in 2015, and currently pursuing a PhD from Dr B R Ambedkar National Institute of Technology, Jalandhar, India. His main areas of research interest are semiconductor device physics, HEMT, analog circuit design, etc. Corresponding author. Email: [email protected]

Nitesh Kashyap

Nitesh Kashyap received his BE degree in electronics and communication engineering from the Jiwaji University, Gwalior and ME degree in microwave engineering from the JEC, Jabalpur. He completed his PhD from the IIITDM Jabalpur, in December, 2016. He has visited Loughborough University London for research. He is a member of several international technical societies. Currently, he is working as an assistant professor at National Institute of Technology, Jalandhar, India. His main research interests are microwave component, broadband antenna, high gain antenna and circularly polarized antenna design. Email: [email protected]

Ashish Raman

Ashish Raman was born in India in 1983. He received his BTech from Mahatama Jyotiba Phule Rohilkhand University, Bareilly, an ME in microelectronics & VLSI design from Shri Govindram Seksaria Institute of Technology and Science, Indore, and a PhD from Dr B R Ambedkar National Institute of Technology, Jalandhar, India in 2003, 2005, and 2015, respectively. He is currently working as assistant professor at Dr B R Ambedkar National Institute of Technology, Jalandhar, India. His main areas of research interest are VLSI design, semiconductor devices, microelectronics, MEMS/NEMS, etc. He is a member of the IEEE, Institute of Electrical Engineers of Japan, the Society of Instrument and Control Engineers of Japan, the Institute of Systems, Control and Information Engineers, and the Japan Institute of Power Electronics. Email: [email protected]