Enhanced performance of Cu₂SnS₃ absorber layer in SLG/Mo/Cu₂SnS₃/ZnS/ITO/Al structure: insights and optimisation using SCAPS-1D

ABSTRACT

In this paper, an in-depth numerical study was conducted to analyse the behaviour of the electronic structure within the configuration of SLG/Mo/Cu₂SnS₃/ZnS/ITO/Al solar cells with the aim of improving their performance. The study examines the effects of thickness (Th), energy gap (Eg), and the operational temperature (T) on the Cu₂SnS₃ absorption layer. Utilising SCAPS-1D software, the study gathers data on short-circuit current density (Jsc), open-circuit voltage (Voc), fill Factor (FF), and efficiency (η), comparing them with experimental literature findings. The results reveal a 24.3% enhancement in the absorber layer at Th = 1.6 µm, Eg = 1.39 eV, and T = 310 K, accompanied by a significant reduction in non-radiative recombination rates.

KEYWORDS:

• Slg/Mo/Cu2SnS3/ZnS/Ito/Al
• Cu₂SnS₃
• recombination rates

Nomenclature

Th	=	Thickness$\left(\mathit{\mu m}\right)$
${\mathrm{E}}_{\mathrm{g}}$	=	Gap energy $\left(\mathrm{eV}\right)$
${\mathrm{N}}_{\mathrm{c}}$	=	Effective density of states in CB $\mathrm{c}{\mathrm{m}}^{-3}$
${\mathrm{N}}_{\mathrm{V}}$	=	Effective density of states in VB $\mathrm{c}{\mathrm{m}}^{-3}$
${\mathrm{N}}_{\mathrm{D}}$	=	Donor density $\mathrm{c}{\mathrm{m}}^{-3}$
${\mathrm{N}}_{\mathrm{A}}$	=	Acceptor density ($\mathrm{c}{\mathrm{m}}^{-3}$)
Nt	=	Defect density ($\mathit{c}{m}^{-1}$)
Rs	=	Series Resistances ($\mathrm{\Omega }.\mathit{c}{m}^2$)
Rsh	=	Shunt Resistances ($\mathrm{\Omega }.\mathit{c}{m}^2$)
$V_{\mathit{th},\mathit{e}}$	=	Thermal velocities of electrons $\mathrm{cm}.{\mathrm{s}}^{-1}$
$V_{\mathit{th},\mathit{h}}$	=	Thermal velocities of hole $\mathrm{cm}.{\mathrm{s}}^{-1}$
Voc	=	Open circuit voltage (V)
Jsc	=	Short circuit current density($\mathit{mA}/\mathit{cm}$)
FF	=	Fill factor (%)
CTS	=	Copper-Tin Sulphide Films
TCO	=	Transparent Conductive Oxide
ZnS	=	Fill factor (%)
SLG	=	Soda-Lime Glass Substrate
Greek symbols	=
η	=	Efficiency (%)
$\mathit{\chi }$	=	Electronic affinity $\mathrm{eV}$
${\mathit{\epsilon }}_{\mathrm{r}}$	=	Relative permeability
${\mathit{\mu }}_{\mathrm{p}}$	=	Holes moblility (cm/V.s)
${\mathit{\mu }}_{\mathrm{e}}$	=	Electron mobility (cm/V.s)
σe	=	Capture cross section electrons (cm2)
σh	=	Capture cross section holes (cm2)
Abbreviation	=
SCAPS-1D	=	One-dimensionalSolar Cell Capacitance Simulator.

Acknowledgments

This work is supported by the team renewable energy of ibn tofail university Kenitra, Morocco.

Disclosure statement

No potential conflict of interest was reported by the author(s).

Data availability statement

The data underlying this article were provided by [SCAPS-1D] under licence/by permission. The data underlying this article will be shared on reasonable request to the corresponding author.