https://orcid.org/0000-0002-9070-5666
![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
Abstract
This study presents the development of multi-channel thin-film transistors (TFTs) using plasma-enhanced atomic layer deposition (PEALD) to stack layers of IGZO/Al2O3, with the number of stacking layers ranging from 1 to 10 (1S, 3S, 5S and 10S). To optimize the performance of the AM-LED display, the subthreshold swing (S·S) and mobility of each type of transistor, such as switching and driving transistors, were customized to meet specific requirements. The results show that as the number of stacking layers increased, the field-effect mobility (µFE) improved by 323% from 1.34 to 4.33 cm2/Vs, while S·S improved by 0.14 V/dec from 0.31 to 0.45 V/dec, with no variation in threshold voltage (Vth) and reliability. The study attributes the improvement in µFE and S·S to the formation of multiple electron transport paths as confirmed by a TCAD simulation showing an increase in current density. Overall, this study demonstrates the potential of PEALD in creating multi-channel TFTs with improved performance by customizing oxide semiconductor properties. This research may have important implications in the development of advanced electronic devices that rely on thin-film transistors, as it provides a new approach in enhancing the performance of these devices.
Acknowledgement
This work was supported by the Industry Technology R&D Program [grant number 20006400] funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).
Disclosure statement
No potential conflict of interest was reported by the author(s).
Additional information
Notes on contributors
Won-Bum Lee
Won-Bum Lee received a B.S. degree from the Division of Materials Science and Engineering of Hanyang University, Seoul, South Korea. His research work has been focused on thin-film transistors based on metal oxide materials.
Yoon-Seo Kim
Yoon-Seo Kim received his B.S. degree from the Division of Materials Science and Engineering of Hanyang University, Seoul, South Korea. His research work has been focused on thin-film transistors based on metal oxide materials.
Jin-Seong Park
Jin-Seong Park received his Ph.D. degree from the Department of Materials Science and Engineering of KAIST, Daejeon, South Korea, in 2002. He then worked at Roy Gordon’s Laboratory in Harvard, USA as a postdoctoral associate. Since 2013, he has been a Professor at the Division of Materials Science and Engineering of Hanyang University, Seoul, South Korea. Awards he received include the Merck Young Scientist Award (2014) and Merck Special Award in ALD Materials and Process (2021).