Advanced search
Publication Cover
Critical Reviews in Solid State and Materials Sciences Latest Articles
Submit an article Journal homepage
437
Views
0
CrossRef citations to date
0
Altmetric
Review Article

Performance analysis of photodetectors based on 2D materials and heterostructures

Nagaraj NandihalliCritical Materials Innovation Hub, Ames National Laboratory, U.S. Department of Energy, Iowa State University, Ames, Iowa, USACorrespondence[email protected]
ORCID Iconhttps://orcid.org/0000-0001-7067-5394View further author information
ORCID Icon
Published online: 11 Jan 2024

References

  • Mahulikar, S. P.; Sonawane, H. R.; Rao, G. A. Infrared Signature Studies of Aerospace Vehicles. Prog. Aerosp. Sci. 2007, 43, 218–245. 10.1016/j.paerosci.2007.06.002
  • Mueller, T.; Xia, F.; Avouris, P. Graphene Photodetectors for High-Speed Optical Communications. Nat. Photon. 2010, 4, 297–301. 10.1038/nphoton.2010.40
  • Blackett, M. An Overview of Infrared Remote Sensing of Volcanic Activity. J. Imag. 2017, 3, 13. 10.3390/jimaging3020013
  • Lecoq, P.; Gundacker, S. SiPM Applications in Positron Emission Tomography: Toward Ultimate PET Time-of-Flight Resolution. Eur. Phys. J. Plus 2021, 136, 292. 10.1140/epjp/s13360–021–01183–8
  • Osornio-Rios, R. A.; Antonino-Daviu, J. A.; de Jesus Romero-Troncoso, R. Recent Industrial Applications of Infrared Thermography: A Review. IEEE Trans. Ind. Inf. 2019, 15, 615–625. 10.1109/TII.2018.2884738
  • Wang, C.; Zhang, X.; Hu, W. Organic Photodiodes and Phototransistors toward Infrared Detection: Materials, Devices, and Applications. Chem. Soc. Rev. 2020, 49, 653–670. 10.1039/c9cs00431a
  • Miao, J.; Liu, X.; Jo, K.; He, K.; Saxena, R.; Song, B.; Zhang, H.; He, J.; Han, M.-G.; Hu, W.; Jariwala, D. Gate-Tunable Semiconductor Heterojunctions from 2D/3D Van Der Waals Interfaces. Nano Lett. 2020, 20, 2907–2915. 10.1021/acs.nanolett.0c00741
  • Gong, X.; Tong, M.; Xia, Y.; Cai, W.; Moon, J. S.; Cao, Y.; Yu, G.; Shieh, C.-L.; Nilsson, B.; Heeger, A. J. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm. Science 2009, 325, 1665–1667. 10.1126/science.1176706
  • Tan, H.; Fan, C.; Ma, L.; Zhang, X.; Fan, P.; Yang, Y.; Hu, W.; Zhou, H.; Zhuang, X.; Zhu, X.; Pan, A. Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance near-Infrared Photodetectors. Nanomicro. Lett. 2016, 8, 29–35. 10.1007/s40820–015–0058–0
  • Rogalski, A. HgCdTe Infrared Detector Material: History, Status and Outlook. Rep. Prog. Phys. 2005, 68, 2267–2336. 10.1088/0034–4885/68/10/R01
  • Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-Layer MoS2 Transistors. Nat. Nanotechnol. 2011, 6, 147–150. 10.1038/nnano.2010.279
  • Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; Van Der Zant, H. S.; Castellanos-Gomez, A. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors. Nano Lett. 2014, 14, 3347–3352. 10.1021/nl5008085
  • Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron Nitride Substrates for High-Quality Graphene Electronics. Nat. Nanotechnol. 2010, 5, 722–726. 10.1038/nnano.2010.172
  • Kang, K.; Xie, S.; Huang, L.; Han, Y.; Huang, P. Y.; Mak, K. F.; Kim, C.-J.; Muller, D.; Park, J. High-Mobility Three-Atom-Thick Semiconducting Films with Wafer-Scale Homogeneity. Nature 2015, 520, 656–660. 10.1038/nature14417
  • Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.; Mishchenko, A.; Kim, Y.-J.; Gorbachev, R. V.; Georgiou, T.; Morozov, S. V.; et al. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films. Science 2013, 340, 1311–1314. 10.1126/science.1235547
  • Wu, S.; Buckley, S.; Schaibley, J. R.; Feng, L.; Yan, J.; Mandrus, D. G.; Hatami, F.; Yao, W.; Vučković, J.; Majumdar, A.; Xu, X. Monolayer Semiconductor Nanocavity Lasers with Ultralow Thresholds. Nature 2015, 520, 69–72. 10.1038/nature14290
  • Xie, L. Two-Dimensional Transition Metal Dichalcogenide Alloys: Preparation, Characterization and Applications. Nanoscale 2015, 7, 18392–18401. 10.1039/c5nr05712d
  • Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C.-Y.; Galli, G.; Wang, F. Emerging Photoluminescence in Monolayer MoS2. Nano Lett. 2010, 10, 1271–1275. 10.1021/nl903868w
  • Zhou, X.; Hu, X.; Jin, B.; Yu, J.; Liu, K.; Li, H.; Zhai, T. Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity. Adv. Sci. (Weinh) 2018, 5, 1800478. 10.1002/advs.201800478
  • Ornelas, C. D.; Bowman, A.; Walmsley, T. S.; Wang, T.; Andrews, K.; Zhou, Z.; Xu, Y.-Q. Ultrafast Photocurrent Response and High Detectivity in Two-Dimensional MoSe2-Based Heterojunctions. ACS Appl. Mater. Interfaces. 2020, 12, 46476–46482. 10.1021/acsami.0c12155
  • Xiang, D.; Liu, T.; Wang, J.; Wang, P.; Wang, L.; Zheng, Y.; Wang, Y.; Gao, J.; Ang, K.; Eda, G.; et al. Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor. Adv. Opt. Mater. 2019, 7, 1901115. 10.1002/adom.201901115
  • Xue, H.; Dai, Y.; Kim, W.; Wang, Y.; Bai, X.; Qi, M.; Halonen, K.; Lipsanen, H.; Sun, Z. High Photoresponsivity and Broadband Photodetection with a Band-Engineered WSe2/SnSe2 Heterostructure. Nanoscale 2019, 11, 3240–3247. 10.1039/c8nr09248f
  • Goykhman, I.; Sassi, U.; Desiatov, B.; Mazurski, N.; Milana, S.; de Fazio, D.; Eiden, A.; Khurgin, J.; Shappir, J.; Levy, U.; Ferrari, A. C. On-Chip Integrated, Silicon–Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain. Nano Lett. 2016, 16, 3005–3013. 10.1021/acs.nanolett.5b05216
  • Li, J.; Xi, X.; Lin, S.; Ma, Z.; Li, X.; Zhao, L. Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors. ACS Appl. Mater. Interfaces. 2020, 12, 11965–11971. 10.1021/acsami.9b22651
  • Kannan, H.; Stavro, J.; Mukherjee, A.; Léveillé, S.; Kisslinger, K.; Guan, L.; Zhao, W.; Sahu, A.; Goldan, A. H. Ultralow Dark Currents in Avalanche Amorphous Selenium Photodetectors Using Solution-Processed Quantum Dot Blocking Layer. ACS Photon. 2020, 7, 1367–1374. 10.1021/acsphotonics.9b01651
  • Yang, Y.; Yang, X.; Zou, X.; Wu, S.; Wan, D.; Cao, A.; Liao, L.; Yuan, Q.; Duan, X. Ultrafine Graphene Nanomesh with Large on/off Ratio for High‐Performance Flexible Biosensors. Adv. Funct. Mater. 2017, 27, 1604096.
  • Horiuchi, N. Integrated Optical Antenna. Nat. Photon. 2020, 14, 134–134. 10.1038/s41566–020–0594–0
  • Xu, Z.; Tang, L.; Zhang, S.; Li, J.; Liu, B.; Zhao, S.; Yu, C.; Wei, G. 2D MoS2/CuPc Heterojunction Based Highly Sensitive Photodetectors through Ultrafast Charge Transfer. Mater. Today Phys. 2020, 15, 100273. 10.1016/j.mtphys.2020.100273
  • Dan, M.; Hu, G.; Li, L.; Zhang, Y. High Performance Piezotronic Logic Nanodevices Based on GaN/InN/GaN Topological Insulator. Nano Energy 2018, 50, 544–551. 10.1016/j.nanoen.2018.06.007
  • Ulaganathan, R. K.; Sankar, R.; Lin, C. y.; Murugesan, R. C.; Tang, K.; Chou, F. c., High‐Performance Flexible Broadband Photodetectors Based on 2D Hafnium Selenosulfide Nanosheets. Adv. Electron. Mater. 2020, 6, 1900794.
  • Lim, S. Q.; Lew, C.-K.; Chow, P. K.; Warrender, J. M.; Williams, J.; Johnson, B. Toward Understanding and Optimizing Au-Hyperdoped Si Infrared Photodetectors. APL Mater. 2020, 8, 061109.
  • Cusati, T.; Fiori, G.; Gahoi, A.; Passi, V.; Lemme, M. C.; Fortunelli, A.; Iannaccone, G. Electrical Properties of Graphene-Metal Contacts. Sci. Rep. 2017, 7, 5109. 10.1038/s41598–017–05069–7
  • Qiao, H.; Huang, Z.; Ren, X.; Liu, S.; Zhang, Y.; Qi, X.; Zhang, H. Self‐Powered Photodetectors Based on 2D Materials. Adv. Opt. Mater. 2020, 8, 1900765. 10.1002/adom.201900765
  • Duan, X.; Wang, C.; Pan, A.; Yu, R.; Duan, X. Two-Dimensional Transition Metal Dichalcogenides as Atomically Thin Semiconductors: Opportunities and Challenges. Chem. Soc. Rev. 2015, 44, 8859–8876. 10.1039/c5cs00507h
  • Koppens, F.; Mueller, T.; Avouris, P.; Ferrari, A.; Vitiello, M.; Polini, M. Photodetectors Based on Graphene, Other Two-Dimensional Materials and Hybrid Systems. Nat. Nanotechnol. 2014, 9, 780–793. 10.1038/nnano.2014.215
  • Mak, K. F.; Shan, J. Photonics and Optoelectronics of 2D Semiconductor Transition Metal Dichalcogenides. Nat. Photon. 2016, 10, 216–226. 10.1038/nphoton.2015.282
  • Kim, J.; Bayram, C.; Park, H.; Cheng, C.-W.; Dimitrakopoulos, C.; Ott, J. A.; Reuter, K. B.; Bedell, S. W.; Sadana, D. K. Principle of Direct Van Der Waals Epitaxy of Single-Crystalline Films on Epitaxial Graphene. Nat. Commun. 2014, 5, 4836. 10.1038/ncomms5836
  • Wang, Q.; Xu, K.; Wang, Z.; Wang, F.; Huang, Y.; Safdar, M.; Zhan, X.; Wang, F.; Cheng, Z.; He, J. Van Der Waals Epitaxial Ultrathin Two-Dimensional Nonlayered Semiconductor for Highly Efficient Flexible Optoelectronic Devices. Nano Lett. 2015, 15, 1183–1189. 10.1021/nl504258m
  • Zheng, W.; Feng, W.; Zhang, X.; Chen, X.; Liu, G.; Qiu, Y.; Hasan, T.; Tan, P.; Hu, P. A. Anisotropic Growth of Nonlayered CdS on MoS2 Monolayer for Functional Vertical Heterostructures. Adv. Funct. Mater. 2016, 26, 2648–2654. 10.1002/adfm.201504775
  • Woods, J. F. Investigation of the Photoconductive Effect in Lead Sulfide Films Using Hall and Resistivity Measurements. Phys. Rev. 1957, 106, 235–240. 10.1103/PhysRev.106.235
  • Zitter, R. Role of Traps in the Photoelectromagnetic and Photoconductive Effects. Phys. Rev. 1958, 112, 852–855. 10.1103/PhysRev.112.852
  • Liu, N.; Tian, H.; Schwartz, G.; Tok, J. B.; H.; Ren, T.-L.; Bao, Z. Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using PN Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene. Nano Lett. 2014, 14, 3702–3708. 10.1021/nl500443j
  • Shimatani, M.; Ogawa, S.; Fujisawa, D.; Okuda, S.; Kanai, Y.; Ono, T.; Matsumoto, K. Photocurrent Enhancement of Graphene Phototransistors Using p–n Junction Formed by Conventional Photolithography Process. Jpn. J. Appl. Phys. 2016, 55, 110307. 10.7567/JJAP.55.110307
  • Cai, X.; Sushkov, A. B.; Suess, R. J.; Jadidi, M. M.; Jenkins, G. S.; Nyakiti, L. O.; Myers-Ward, R. L.; Li, S.; Yan, J.; Gaskill, D. K.; et al. Sensitive Room-Temperature Terahertz Detection via the Photothermoelectric Effect in Graphene. Nat. Nanotechnol. 2014, 9, 814–819. 10.1038/nnano.2014.182
  • Yao, Y.; Shankar, R.; Rauter, P.; Song, Y.; Kong, J.; Loncar, M.; Capasso, F. High-Responsivity Mid-Infrared Graphene Detectors with Antenna-Enhanced Photocarrier Generation and Collection. Nano Lett. 2014, 14, 3749–3754. 10.1021/nl500602n
  • Ogawa, S.; Shimatani, M.; Fukushima, S.; Okuda, S.; Matsumoto, K. Graphene on Metal-Insulator-Metal-Based Plasmonic Metamaterials at Infrared Wavelengths. Opt. Express. 2018, 26, 5665–5674. 10.1364/OE.26.005665
  • Furchi, M.; Urich, A.; Pospischil, A.; Lilley, G.; Unterrainer, K.; Detz, H.; Klang, P.; Andrews, A. M.; Schrenk, W.; Strasser, G.; Mueller, T. Microcavity-Integrated Graphene Photodetector. Nano Lett. 2012, 12, 2773–2777. 10.1021/nl204512x
  • Engel, M.; Steiner, M.; Lombardo, A.; Ferrari, A. C.; Löhneysen, H. v.; Avouris, P.; Krupke, R. Light–Matter Interaction in a Microcavity-Controlled Graphene Transistor. Nat. Commun. 2012, 3, 906. 10.1038/ncomms1911
  • Liu, C.-H.; Chang, Y.-C.; Norris, T. B.; Zhong, Z. Graphene Photodetectors with Ultra-Broadband and High Responsivity at Room Temperature. Nat. Nanotechnol. 2014, 9, 273–278. 10.1038/nnano.2014.31
  • Zhang, B. Y.; Liu, T.; Meng, B.; Li, X.; Liang, G.; Hu, X.; Wang, Q. J. Broadband High Photoresponse from Pure Monolayer Graphene Photodetector. Nat. Commun. 2013, 4, 1811. 10.1038/ncomms2830
  • Freitag, M.; Low, T.; Martin-Moreno, L.; Zhu, W.; Guinea, F.; Avouris, P. Substrate-Sensitive Mid-Infrared Photoresponse in Graphene. ACS Nano. 2014, 8, 8350–8356. 10.1021/nn502822z
  • Chapin, D. M.; Fuller, C. S.; Pearson, G. L. A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power. J. Appl. Phys. 1954, 25, 676–677. 10.1063/1.1721711
  • Buscema, M.; Island, J. O.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S.; Castellanos-Gomez, A. Photocurrent Generation with Two-Dimensional Van Der Waals Semiconductors. Chem. Soc. Rev. 2015, 44, 3691–3718. 10.1039/c5cs00106d
  • Lu, X.; Sun, L.; Jiang, P.; Bao, X. Progress of Photodetectors Based on the Photothermoelectric Effect. Adv. Mater. 2019, 31, e1902044. 10.1002/adma.201902044
  • Freitag, M.; Low, T.; Xia, F.; Avouris, P. Photoconductivity of Biased Graphene. Nat. Photon. 2013, 7, 53–59. 10.1038/nphoton.2012.314
  • Chen, L.; Wang, B.; Dong, J.; Gao, F.; Zheng, H.; He, M.; Wang, X. Insights into the Pyro-Phototronic Effect in p-Si/n-ZnO Nanowires Heterojunction toward High-Performance near-Infrared Photosensing. Nano Energy 2020, 78, 105260. 10.1016/j.nanoen.2020.105260
  • Long, M.; Wang, P.; Fang, H.; Hu, W. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors. Adv. Funct. Mater. 2019, 29, 1803807.
  • Xie, M.; Dunn, S.; Le Boulbar, E.; Bowen, C. R. Pyroelectric Energy Harvesting for Water Splitting. Int. J. Hydrogen Energy 2017, 42, 23437–23445. 10.1016/j.ijhydene.2017.02.086
  • Ringe, E.; Zhang, J.; Langille, M. R.; Sohn, K.; Cobley, C.; Au, L.; Xia, Y.; Mirkin, C. A.; Huang, J.; Marks, L. D. Effect of Size, Shape, Composition, and Support Film on Localized Surface Plasmon Resonance Frequency: A Single Particle Approach Applied to Silver Bipyramids and Gold and Silver Nanocubes. MRS Online Proceedings Library (OPL) 1208, 1002, 2009. 10.1557/PROC-1208-O10-02.
  • Chen, Y.; Ming, H. Review of Surface Plasmon Resonance and Localized Surface Plasmon Resonance Sensor. Photon. Sens. 2012, 2, 37–49. 10.1007/s13320–011–0051–2
  • Lesuffleur, A.; Im, H.; Lindquist, N. C.; Oh, S.-H. Periodic Nanohole Arrays with Shape-Enhanced Plasmon Resonance as Real-Time Biosensors. Appl. Phys. Lett. 2007, 90, 243110.
  • Clavero, C. Plasmon-Induced Hot-Electron Generation at Nanoparticle/Metal-Oxide Interfaces for Photovoltaic and Photocatalytic Devices. Nat. Photon. 2014, 8, 95–103. 10.1038/nphoton.2013.238
  • Gogurla, N.; Sinha, A. K.; Santra, S.; Manna, S.; Ray, S. K. Multifunctional Au-ZnO Plasmonic Nanostructures for Enhanced UV Photodetector and Room Temperature NO Sensing Devices. Sci. Rep. 2014, 4, 6483. 10.1038/srep06483
  • Fang, H.; Hu, W. Photogating in Low Dimensional Photodetectors. Adv. Sci. (Weinh) 2017, 4, 1700323. 10.1002/advs.201700323
  • Tamalampudi, S. R.; Lu, Y.-Y.; Kumar U, R.; Sankar, R.; Liao, C.-D.; Moorthy B, K.; Cheng, C.-H.; Chou, F. C.; Chen, Y.-T. High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response. Nano Lett. 2014, 14, 2800–2806. 10.1021/nl500817g
  • Casiraghi, C.; Hartschuh, A.; Lidorikis, E.; Qian, H.; Harutyunyan, H.; Gokus, T.; Novoselov, K. S.; Ferrari, A. Rayleigh Imaging of Graphene and Graphene Layers. Nano Lett. 2007, 7, 2711–2717. 10.1021/nl071168m
  • Wang, X.; Wang, P.; Wang, J.; Hu, W.; Zhou, X.; Guo, N.; Huang, H.; Sun, S.; Shen, H.; Lin, T.; et al. Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics. Adv. Mater. 2015, 27, 6575–6581. 10.1002/adma.201503340
  • Zhang, W.; Huang, J. K.; Chen, C. H.; Chang, Y. H.; Cheng, Y. J.; Li, L. J. High‐Gain Phototransistors Based on a CVD MoS2 Monolayer. Adv. Mater. 2013, 25, 3456–3461. 10.1002/adma.201301244
  • Bie, Y.-Q.; Grosso, G.; Heuck, M.; Furchi, M. M.; Cao, Y.; Zheng, J.; Bunandar, D.; Navarro-Moratalla, E.; Zhou, L.; Efetov, D. K.; et al. A MoTe2-Based Light-Emitting Diode and Photodetector for Silicon Photonic Integrated Circuits. Nat. Nanotechnol. 2017, 12, 1124–1129. 10.1038/nnano.2017.209
  • Furchi, M. M.; Polyushkin, D. K.; Pospischil, A.; Mueller, T. Mechanisms of Photoconductivity in Atomically Thin MoS2. Nano Lett. 2014, 14, 6165–6170. 10.1021/nl502339q
  • Tian, W.; Zhou, H.; Li, L. Hybrid Organic–Inorganic Perovskite Photodetectors. Small 2017, 13, 1702107. 10.1002/smll.201702107
  • Yang, J.; Bao, C.; Ning, W.; Wu, B.; Ji, F.; Yan, Z.; Tao, Y.; Liu, J. M.; Sum, T. C.; Bai, S. Stable, High‐Sensitivity and Fast‐Response Photodetectors Based on Lead‐Free Cs2AgBiBr6 Double Perovskite Films. Adv. Opt. Mater. 2019, 7, 1801732.
  • García de Arquer, F. P.; Armin, A.; Meredith, P.; Sargent, E. H. Solution-Processed Semiconductors for Next-Generation Photodetectors. Nat. Rev. Mater. 2017, 2, 1–17. 10.1038/natrevmats.2016.100
  • Piotrowski, J. Uncooled Operation of IR Photodetectors. Opto-Electron. Rev. 2004, 12, 111–122.
  • Neto, A. C.; Guinea, F.; Peres, N. M.; Novoselov, K. S.; Geim, A. K. The Electronic Properties of Graphene. Rev. Mod. Phys. 2009, 81, 109–162. 10.1103/RevModPhys.81.109
  • Novoselov, K. S.; Morozov, S. V.; Mohinddin, T. M. G.; Ponomarenko, L. A.; Elias, D. C.; Yang, R.; Barbolina, I. I.; Blake, P.; Booth, T. J.; Jiang, D.; et al. Electronic Properties of Graphene. Phys Stat Solidi (b) 2007, 244, 4106–4111. 10.1002/pssb.200776208
  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I.; Dubonos, S.; Firsov, a Two-Dimensional Gas of Massless Dirac Fermions in Graphene. Nature 2005, 438, 197–200. 10.1038/nature04233
  • Geim, A. K.; Novoselov, K. S. The Rise of Graphene. Nature Journals. 2007, 183–191.
  • Nayak, P. K. Two-Dimensional Materials for Photodetector. BoD–Books on Demand; IntechOpen Book: Rijeka, Croatia, 2018, p. 21.
  • Xia, F.; Mueller, T.; Lin, Y-m.; Valdes-Garcia, A.; Avouris, P. Ultrafast Graphene Photodetector. Nat. Nanotechnol. 2009, 4, 839–843. 10.1038/nnano.2009.292
  • Xia, F.; Wang, H.; Xiao, D.; Dubey, M.; Ramasubramaniam, A. Two-Dimensional Material Nanophotonics. NatPhoton. 2014, 8, 899–907. 10.1038/nphoton.2014.271
  • Bao, Q.; Hoh, H.; Zhang, Y. Graphene Photonics, Optoelectronics, and Plasmonics. Taylor and Francis Group: Singapore, 2017, p. 101–124.
  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D-e.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films. Science 2004, 306, 666–669. 10.1126/science.1102896
  • Bointon, T. H.; Barnes, M. D.; Russo, S.; Craciun, M. F. High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition. Adv. Mater. 2015, 27, 4200–4206. 10.1002/adma.201501600
  • Hernandez, Y.; Nicolosi, V.; Lotya, M.; Blighe, F. M.; Sun, Z.; De, S.; McGovern, I. T.; Holland, B.; Byrne, M.; Gun’Ko, Y. K.; et al. High-Yield Production of Graphene by Liquid-Phase Exfoliation of Graphite. Nat. Nanotechnol. 2008, 3, 563–568. 10.1038/nnano.2008.215
  • Bointon, T. H.; Khrapach, I.; Yakimova, R.; Shytov, A. V.; Craciun, M. F.; Russo, S. Approaching Magnetic Ordering in Graphene Materials by FeCl3 Intercalation. Nano Lett. 2014, 14, 1751–1755. 10.1021/nl4040779
  • Gabor, N. M.; Song, J. C.; Ma, Q.; Nair, N. L.; Taychatanapat, T.; Watanabe, K.; Taniguchi, T.; Levitov, L. S.; Jarillo-Herrero, P. Hot Carrier–Assisted Intrinsic Photoresponse in Graphene. Science 2011, 334, 648–652. 10.1126/science.1211384
  • Konstantatos, G.; Badioli, M.; Gaudreau, L.; Osmond, J.; Bernechea, M.; De Arquer, F.; Gatti, F.; Koppens, F. H. Hybrid Graphene–Quantum Dot Phototransistors with Ultrahigh Gain. Nat. Nanotechnol. 2012, 7, 363–368. 10.1038/nnano.2012.60
  • Park, J.; Ahn, Y.; Ruiz-Vargas, C. Imaging of Photocurrent Generation and Collection in Single-Layer Graphene. Nano Lett. 2009, 9, 1742–1746. 10.1021/nl8029493
  • Echtermeyer, T. J.; Nene, P. S.; Trushin, M.; Gorbachev, R. V.; Eiden, A. L.; Milana, S.; Sun, Z.; Schliemann, J.; Lidorikis, E.; Novoselov, K. S.; Ferrari, A. C. Photothermoelectric and Photoelectric Contributions to Light Detection in Metal–Graphene–Metal Photodetectors. Nano Lett. 2014, 14, 3733–3742. 10.1021/nl5004762
  • Gan, X.; Shiue, R. J.; Gao, Y.; Meric, I.; Heinz, T. F.; Shepard, K.; Hone, J.; Assefa, S.; Englund, D. Chip-Integrated Ultrafast Graphene Photodetector with High Responsivity. Nat. Photon. 2013, 7, 883–887. 10.1038/nphoton.2013.253
  • Sevak Singh, R.; Nalla, V.; Chen, W.; Ji, W.; Wee, A. T. Photoresponse in Epitaxial Graphene with Asymmetric Metal Contacts. Appl. Phys. Lett. 2012, 100, 093116.
  • Yoo, T. J.; Kim, Y. J.; Lee, S. K.; Kang, C. G.; Chang, K. E.; Hwang, H. J.; Revannath, N.; Lee, B. H. Zero-Bias Operation of CVD Graphene Photodetector with Asymmetric Metal Contacts. ACS Photon. 2018, 5, 365–370. 10.1021/acsphotonics.7b01405
  • Sze, S. M.; Li, Y.; Ng, K. K. Physics of Semiconductor Devices; New York: John wiley & sons, 1981.
  • Shiue, R.-J.; Gan, X.; Gao, Y.; Li, L.; Yao, X.; Szep, A.; Walker, D. Jr; Hone, J.; Englund, D. Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity. Appl. Phys. Lett. 2013, 103, 241109.
  • Pospischil, A.; Humer, M.; Furchi, M. M.; Bachmann, D.; Guider, R.; Fromherz, T.; Mueller, T. CMOS-Compatible Graphene Photodetector Covering All Optical Communication Bands. Nat. Photon. 2013, 7, 892–896. 10.1038/nphoton.2013.240
  • Fang, Z.; Wang, Y.; Liu, Z.; Schlather, A.; Ajayan, P. M.; Koppens, F. H.; Nordlander, P.; Halas, N. J. Plasmon-Induced Doping of Graphene. ACS Nano. 2012, 6, 10222–10228. 10.1021/nn304028b
  • Schedin, F.; Lidorikis, E.; Lombardo, A.; Kravets, V. G.; Geim, A. K.; Grigorenko, A. N.; Novoselov, K. S.; Ferrari, A. C. Surface-Enhanced Raman Spectroscopy of Graphene. ACS Nano. 2010, 4, 5617–5626. 10.1021/nn1010842
  • Maier, S. Plasmonics: Fundamentals and Applications; New York Inc: Springer Science & Business Media, 1981. 10.1007/0-387-37825-1
  • Echtermeyer, T.; Milana, S.; Sassi, U.; Eiden, A.; Wu, M.; Lidorikis, E.; Ferrari, A. Surface Plasmon Polariton Graphene Photodetectors. Nano Lett. 2016, 16, 8–20. 10.1021/acs.nanolett.5b02051
  • Xie, C.; Mak, C.; Tao, X.; Yan, F. Photodetectors Based on Two‐Dimensional Layered Materials beyond Graphene. Adv. Funct. Mater. 2017, 27, 1603886.
  • Wang, X.; Cheng, Z.; Xu, K.; Tsang, H. K.; Xu, J.-B. High-Responsivity Graphene/Silicon-Heterostructure Waveguide Photodetectors. Nat. Photon. 2013, 7, 888–891. 10.1038/nphoton.2013.241
  • Son, J. G.; Son, M.; Moon, K. J.; Lee, B. H.; Myoung, J. M.; Strano, M. S.; Ham, M. H.; Ross, C. A. Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography. Adv. Mater. 2013, 25, 4723–4728. 10.1002/adma.201300813
  • Zhang, F.; Chen, X.; Zuo, Z.; Qin, X.; Xu, X.; Zhao, X. High Performance Metal-Graphene-Metal Photodetector Employing Epitaxial Graphene on SiC (0001) Surface. J. Mater. Sci.: Mater. Electron 2018, 29, 5180–5185.
  • Song, Y.; Li, X.; Mackin, C.; Zhang, X.; Fang, W.; Palacios, T.; Zhu, H.; Kong, J. Role of Interfacial Oxide in High-Efficiency Graphene–Silicon Schottky Barrier Solar Cells. Nano Lett. 2015, 15, 2104–2110. 10.1021/nl505011f
  • Card, H.; Rhoderick, E. Studies of Tunnel MOS Diodes I. Interface Effects in Silicon Schottky Diodes. J. Phys. D: Appl. Phys. 1971, 4, 1589–1601. 10.1088/0022–3727/4/10/319
  • Wang, L.-W.; Xie, L.-S.; Xu, P.-X.; Xia, K. First-Principles Study of Magnon-Phonon Interactions in Gadolinium Iron Garnet. Phys. Rev. B 2020, 101, 165137. 10.1103/PhysRevB.101.165137
  • Ji, P.; Yang, S.; Wang, Y.; Li, K.; Wang, Y.; Suo, H.; Woldu, Y. T.; Wang, X.; Wang, F.; Zhang, L.; Jiang, Z. High-Performance Photodetector Based on an Interface Engineering-Assisted Graphene/Silicon Schottky Junction. Microsyst. Nanoeng. 2022, 8, 9. 10.1038/s41378–021–00332–4
  • De Sanctis, A.; Mehew, J. D.; Craciun, M. F.; Russo, S. Graphene-Based Light Sensing: Fabrication, Characterisation, Physical Properties and Performance. Materials 2018, 11, 1762. 10.3390/ma11091762
  • Chen, X.; Lu, X.; Deng, B.; Sinai, O.; Shao, Y.; Li, C.; Yuan, S.; Tran, V.; Watanabe, K.; Taniguchi, T.; et al. Widely Tunable Black Phosphorus Mid-Infrared Photodetector. Nat. Commun. 2017, 8, 1672. 10.1038/s41467–017–01978–3
  • Guo, Q.; Pospischil, A.; Bhuiyan, M.; Jiang, H.; Tian, H.; Farmer, D.; Deng, B.; Li, C.; Han, S.-J.; Wang, H.; et al. Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Lett. 2016, 16, 4648–4655. 10.1021/acs.nanolett.6b01977
  • Wang, X.; Jones, A. M.; Seyler, K. L.; Tran, V.; Jia, Y.; Zhao, H.; Wang, H.; Yang, L.; Xu, X.; Xia, F. Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus. Nat. Nanotechnol. 2015, 10, 517–521. 10.1038/nnano.2015.71
  • Chang, T.-Y.; Chen, P.-L.; Yan, J.-H.; Li, W.-Q.; Zhang, Y.-Y.; Luo, D.-I.; Li, J.-X.; Huang, K.-P.; Liu, C.-H. Ultra-Broadband, High Speed, and High-Quantum-Efficiency Photodetectors Based on Black Phosphorus. ACS Appl. Mater. Interfaces. 2019, 12, 1201–1209. 10.1021/acsami.9b13472
  • Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black Phosphorus Field-Effect Transistors. Nat. Nanotechnol. 2014, 9, 372–377. 10.1038/nnano.2014.35
  • Tan, W. C.; Cai, Y.; Ng, R. J.; Huang, L.; Feng, X.; Zhang, G.; Zhang, Y. W.; Nijhuis, C. A.; Liu, X.; Ang, K. W. Few‐Layer Black Phosphorus Carbide Field‐Effect Transistor via Carbon Doping. Adv Mater. 2017, 29, 1700503. 10.1002/adma.201700503
  • Liu, Y.; Qiu, Z.; Carvalho, A.; Bao, Y.; Xu, H.; Tan, S. J.; Liu, W.; Castro Neto, A.; Loh, K. P.; Lu, J. Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus. Nano Lett. 2017, 17, 1970–1977. 10.1021/acs.nanolett.6b05381
  • Rogalski, A.; Kopytko, M.; Martyniuk, P. 2D Material Infrared and Terahertz Detectors: Status and Outlook. Opto-Electron. Rev. 2020, 28, 107–154.
  • Liu, B.; Köpf, M.; Abbas, A. N.; Wang, X.; Guo, Q.; Jia, Y.; Xia, F.; Weihrich, R.; Bachhuber, F.; Pielnhofer, F.; et al. Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties. Adv. Mater. 2015, 27, 4423–4429. 10.1002/adma.201501758
  • Wu, J.; Koon, G. K. W.; Xiang, D.; Han, C.; Toh, C. T.; Kulkarni, E. S.; Verzhbitskiy, I.; Carvalho, A.; Rodin, A. S.; Koenig, S. P.; et al. Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus. ACS Nano. 2015, 9, 8070–8077. 10.1021/acsnano.5b01922
  • Wang, J.; Rousseau, A.; Eizner, E.; Phaneuf-L’Heureux, A.-L.; Schue, L.; Francoeur, S.; Kéna-Cohen, S. Spectral Responsivity and Photoconductive Gain in Thin Film Black Phosphorus Photodetectors. ACS Photon. 2019, 6, 3092–3099. 10.1021/acsphotonics.9b00951
  • Amani, M.; Regan, E.; Bullock, J.; Ahn, G. H.; Javey, A. Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys. ACS Nano. 2017, 11, 11724–11731. 10.1021/acsnano.7b07028
  • Yan, W.; Shresha, V. R.; Jeangros, Q.; Azar, N. S.; Balendhran, S.; Ballif, C.; Crozier, K.; Bullock, J. Spectrally Selective Mid-Wave Infrared Detection Using Fabry-Pérot Cavity Enhanced Black Phosphorus 2D Photodiodes. ACS Nano. 2020, 14, 13645–13651. 10.1021/acsnano.0c05751
  • Tian, R.; Gu, L.; Ji, Y.; Li, C.; Chen, Y.; Hu, S.; Li, Z.; Gan, X.; Zhao, J. Black Phosphorus Photodetector Enhanced by a Planar Photonic Crystal Cavity. ACS Photon. 2021, 8, 3104–3110. 10.1021/acsphotonics.1c01168
  • Ma, Y.; Dong, B.; Wei, J.; Chang, Y.; Huang, L.; Ang, K. W.; Lee, C. High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector. Adv. Opt. Mater. 2020, 8, 2000337. 10.1002/adom.202000337
  • Lien, M. R.; Wang, N.; Wu, J.; Soibel, A.; Gunapala, S. D.; Wang, H.; Povinelli, M. L. Resonant Grating-Enhanced Black Phosphorus Mid-Wave Infrared Photodetector. Nano Lett. 2022, 22, 8704–8710. 10.1021/acs.nanolett.2c03469
  • Gong, F.; Wu, F.; Long, M.; Chen, F.; Su, M.; Yang, Z.; Shi, J. Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity. Physica Status Solidi (RRL) Rapid Res. Lett. 2018, 12, 1800310.
  • Xu, Y.; Liu, C.; Guo, C.; Yu, Q.; Guo, W.; Lu, W.; Chen, X.; Wang, L.; Zhang, K. High Performance near Infrared Photodetector Based on in-Plane Black Phosphorus pn Homojunction. Nano Energy 2020, 70, 104518. 10.1016/j.nanoen.2020.104518
  • Huang, M.; Wang, M.; Chen, C.; Ma, Z.; Li, X.; Han, J.; Wu, Y. Broadband Black‐Phosphorus Photodetectors with High Responsivity. Adv. Mater. 2016, 28, 3481–3485. 10.1002/adma.201506352
  • Rouvière, M.; Vivien, L.; Le Roux, X.; Mangeney, J.; Crozat, P.; Hoarau, C.; Cassan, E.; Pascal, D.; Laval, S.; Fédéli, J.-M. Ultrahigh Speed Germanium-on-Silicon-on-Insulator Photodetectors for 1.31 and 1.55 μ m Operation. Appl. Phys. Lett. 2005, 87, 231109.
  • Dai, D.; Yin, Y.; Yu, L.; Wu, H.; Liang, D.; Wang, Z.; Liu, L. Silicon-plus Photonics. Front. Optoelectron. 2016, 9, 436–449. 10.1007/s12200–016–0629–9
  • Lin, H.; Luo, Z.; Gu, T.; Kimerling, L. C.; Wada, K.; Agarwal, A.; Hu, J. Mid-Infrared Integrated Photonics on Silicon: A Perspective. Nanophotonics 2017, 7, 393–420. 10.1515/nanoph-2017–0085
  • Soref, R. Enabling 2 μm Communications. Nat. Photon. 2015, 9, 358–359. 10.1038/nphoton.2015.87
  • Ding, Y.; Cheng, Z.; Zhu, X.; Yvind, K.; Dong, J.; Galili, M.; Hu, H.; Mortensen, N. A.; Xiao, S.; Oxenløwe, L. K. Ultra-Compact Integrated Graphene Plasmonic Photodetector with Bandwidth above 110 GHz. Nanophotonics 2020, 9, 317–325. 10.1515/nanoph-2019–0167
  • Guo, J.; Li, J.; Liu, C.; Yin, Y.; Wang, W.; Ni, Z.; Fu, Z.; Yu, H.; Xu, Y.; Shi, Y.; et al. High-Performance Silicon − Graphene Hybrid Plasmonic Waveguide Photodetectors beyond 1.55 μm. Light. Sci. Appl. 2020, 9, 29. 10.1038/s41377–020–0263–6
  • Schuler, S.; Muench, J. E.; Ruocco, A.; Balci, O.; Thourhout, D. v.; Sorianello, V.; Romagnoli, M.; Watanabe, K.; Taniguchi, T.; Goykhman, I.; et al. High-Responsivity Graphene Photodetectors Integrated on Silicon Microring Resonators. Nat. Commun. 2021, 12, 3733. 10.1038/s41467–021–23436-x
  • Shiue, R.-J.; Gao, Y.; Wang, Y.; Peng, C.; Robertson, A. D.; Efetov, D. K.; Assefa, S.; Koppens, F. H.; Hone, J.; Englund, D. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit. Nano Lett. 2015, 15, 7288–7293. 10.1021/acs.nanolett.5b02368
  • Youngblood, N.; Chen, C.; Koester, S. J.; Li, M. Waveguide-Integrated Black Phosphorus Photodetector with High Responsivity and Low Dark Current. Nat. Photon. 2015, 9, 247–252. 10.1038/nphoton.2015.23
  • Ma, P.; Salamin, Y.; Baeuerle, B.; Josten, A.; Heni, W.; Emboras, A.; Leuthold, J. Plasmonically Enhanced Graphene Photodetector Featuring 100 Gbit/s Data Reception, High Responsivity, and Compact Size. ACS Photon. 2018, 6, 154–161. 10.1021/acsphotonics.8b01234
  • Yin, Y.; Cao, R.; Guo, J.; Liu, C.; Li, J.; Feng, X.; Wang, H.; Du, W.; Qadir, A.; Zhang, H.; et al. High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 µm. Laser Photon.Rev. 2019, 13, 1900032. 10.1002/lpor.201900032
  • Huang, L.; Dong, B.; Guo, X.; Chang, Y.; Chen, N.; Huang, X.; Liao, W.; Zhu, C.; Wang, H.; Lee, C.; Ang, K.-W. Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications. ACS Nano. 2018, 13, 913–921. 10.1021/acsnano.8b08758
  • Lee, T. I.; Lee, S.; Lee, E.; Sohn, S.; Lee, Y.; Lee, S.; Moon, G.; Kim, D.; Kim, Y. S.; Myoung, J. M.; Wang, Z. L. High‐Power Density Piezoelectric Energy Harvesting Using Radially Strained Ultrathin Trigonal Tellurium Nanowire Assembly. Adv. Mater. 2013, 25, 2920–2925. 10.1002/adma.201300657
  • Coscia, U.; Ambrosone, G.; Palomba, M.; Binetti, S.; Le Donne, A.; Siliqi, D.; Carotenuto, G. Photoconductivity of Tellurium-Poly (Methyl Methacrylate) in the Ultraviolet–Visible-near Infrared Range. Appl. Surf. Sci. 2018, 457, 229–234. 10.1016/j.apsusc.2018.06.221
  • Zhang, G.; Fang, H.; Yang, H.; Jauregui, L. A.; Chen, Y. P.; Wu, Y. Design Principle of Telluride-Based Nanowire Heterostructures for Potential Thermoelectric Applications. Nano Lett. 2012, 12, 3627–3633. 10.1021/nl301327d
  • Zhu, Z.; Cai, X.; Yi, S.; Chen, J.; Dai, Y.; Niu, C.; Guo, Z.; Xie, M.; Liu, F.; Cho, J.-H.; et al. Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental Study. Phys. Rev. Lett. 2017, 119, 106101. 10.1103/PhysRevLett.119.106101
  • Wang, Y.; Qiu, G.; Wang, R.; Huang, S.; Wang, Q.; Liu, Y.; Du, Y.; Goddard, W. A. III;, Kim, M. J.; Xu, X.; et al. Field-Effect Transistors Made from Solution-Grown Two-Dimensional Tellurene. Nat. Electron. 2018, 1, 228–236. 10.1038/s41928–018–0058–4
  • Wang, C.; Zhou, X.; Qiao, J.; Zhou, L.; Kong, X.; Pan, Y.; Cheng, Z.; Chai, Y.; Ji, W. Charge-Governed Phase Manipulation of Few-Layer Tellurium. Nanoscale 2018, 10, 22263–22269. 10.1039/c8nr07501h
  • Qiao, J.; Pan, Y.; Yang, F.; Wang, C.; Chai, Y.; Ji, W. Few-Layer Tellurium: One-Dimensional-like Layered Elementary Semiconductor with Striking Physical Properties. Sci. Bull. (Beijing) 2018, 63, 159–168. 10.1016/j.scib.2018.01.010
  • Du, Y.; Qiu, G.; Wang, Y.; Si, M.; Xu, X.; Wu, W.; Ye, P. D. One-Dimensional Van Der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport. Nano Lett. 2017, 17, 3965–3973. 10.1021/acs.nanolett.7b01717
  • Zhu, Z.; Cai, C.; Niu, C.; Wang, C.; Sun, Q.; Han, X.; Guo, Z.; Jia, Y. Tellurene-a monolayer of tellurium from first-principles prediction. arXiv preprint arXiv:1605.03253 [Preprint]. 2016. 10.48550/arXiv.1605.03253.
  • Xie, Z.; Xing, C.; Huang, W.; Fan, T.; Li, Z.; Zhao, J.; Xiang, Y.; Guo, Z.; Li, J.; Yang, Z. Ultrathin 2D Nonlayered Tellurium Nanosheets: Facile Liquid‐Phase Exfoliation, Characterization, and Photoresponse with High Performance and Enhanced Stability. Adv. Funct. Mater. 2018, 28, 1705833.
  • Peng, J.; Pan, Y.; Yu, Z.; Wu, J.; Wu, J.; Zhou, Y.; Guo, Y.; Wu, X.; Wu, C.; Xie, Y. Two‐Dimensional Tellurium Nanosheets Exhibiting an Anomalous Switchable Photoresponse with Thickness Dependence. Angew. Chem. Int. Ed. Engl. 2018, 57, 13533–13537. 10.1002/anie.201808050
  • Amani, M.; Tan, C.; Zhang, G.; Zhao, C.; Bullock, J.; Song, X.; Kim, H.; Shrestha, V. R.; Gao, Y.; Crozier, K. B.; et al. Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors. ACS Nano. 2018, 12, 7253–7263. 10.1021/acsnano.8b03424
  • Tong, L.; Huang, X.; Wang, P.; Ye, L.; Peng, M.; An, L.; Sun, Q.; Zhang, Y.; Yang, G.; Li, Z.; et al. Stable Mid-Infrared Polarization Imaging Based on Quasi-2D Tellurium at Room Temperature. Nat. Commun. 2020, 11, 2308. 10.1038/s41467–020–16125–8
  • Shen, C.; Liu, Y.; Wu, J.; Xu, C.; Cui, D.; Li, Z.; Liu, Q.; Li, Y.; Wang, Y.; Cao, X.; et al. Tellurene Photodetector with High Gain and Wide Bandwidth. ACS Nano. 2019, 14, 303–310. 10.1021/acsnano.9b04507
  • Zhang, X.; Jiang, J.; Suleiman, A. A.; Jin, B.; Hu, X.; Zhou, X.; Zhai, T. Hydrogen‐Assisted Growth of Ultrathin Te Flakes with Giant Gate‐Dependent Photoresponse. Adv. Funct. Mater. 2019, 29, 1906585.
  • Zhou, G.; Addou, R.; Wang, Q.; Honari, S.; Cormier, C. R.; Cheng, L.; Yue, R.; Smyth, C. M.; Laturia, A.; Kim, J.; et al. High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth. Adv. Mater. 2018, 30, e1803109. 10.1002/adma.201803109
  • Xu, H.; Guo, C.; Zhang, J.; Guo, W.; Kuo, C.-N.; Lue, C. S.; Hu, W.; Wang, L.; Chen, G.; Politano, A.; et al. PtTe2‐Based Type‐II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection. Small 2019, 15, e1903362. 10.1002/smll.201903362
  • Zeng, L.; Wu, D.; Jie, J.; Ren, X.; Hu, X.; Lau, S. P.; Chai, Y.; Tsang, Y. H. Van Der Waals Epitaxial Growth of Mosaic‐like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm. Adv. Mater. 2020, 32, e2004412. 10.1002/adma.202004412
  • Tong, X.-W.; Lin, Y.-N.; Huang, R.; Zhang, Z.-X.; Fu, C.; Wu, D.; Luo, L.-B.; Li, Z.-J.; Liang, F.-X.; Zhang, W. Direct Tellurization of Pt to Synthesize 2D PtTe2 for High-Performance Broadband Photodetectors and NIR Image Sensors. ACS Appl. Mater. Interfaces. 2020, 12, 53921–53931. 10.1021/acsami.0c14996
  • Service, R. F. Perovskite Solar Cells Gear up to Go Commercial. Science 2016, 354, 1214–1215. 10.1126/science.354.6317.1214
  • Green, M. A.; Ho-Baillie, A.; Snaith, H. J. The Emergence of Perovskite Solar Cells. Nat. Photon. 2014, 8, 506–514. 10.1038/nphoton.2014.134
  • Lin, Y.; Lin, G.; Sun, B.; Guo, X. Nanocrystalline Perovskite Hybrid Photodetectors with High Performance in Almost Every Figure of Merit. Adv. Funct. Mater. 2018, 28, 1705589.
  • Wu, D.; Xu, Y.; Zhou, H.; Feng, X.; Zhang, J.; Pan, X.; Gao, Z.; Wang, R.; Ma, G.; Tao, L.; et al. Ultrasensitive, Flexible Perovskite Nanowire Photodetectors with Long‐Term Stability Exceeding 5000 h. InfoMat 2022, 4, e12320. 10.1002/inf2.12320
  • Lee, Y. H.; Song, I.; Kim, S. H.; Park, J. H.; Park, S. O.; Lee, J. H.; Won, Y.; Cho, K.; Kwak, S. K.; Oh, J. H. Perovskite Granular Wire Photodetectors with Ultrahigh Photodetectivity. Adv. Mater. 2020, 32, e2002357. 10.1002/adma.202002357
  • Xu, Z.; Li, L.; Dong, X.; Lu, D.; Wang, R.; Yin, W.-J.; Liu, Y. CsPbI3-Based Phase-Stable 2D Ruddlesden–Popper Perovskites for Efficient Solar Cells. Nano Lett. 2022, 22, 2874–2880. 10.1021/acs.nanolett.2c00002
  • Guo, Q.; Yu, R.; Li, C.; Yuan, S.; Deng, B.; García de Abajo, F. J.; Xia, F. Efficient Electrical Detection of Mid-Infrared Graphene Plasmons at Room Temperature. Nat. Mater. 2018, 17, 986–992. 10.1038/s41563–018–0157–7
  • Chen, Z.; Li, X.; Wang, J.; Tao, L.; Long, M.; Liang, S.-J.; Ang, L. K.; Shu, C.; Tsang, H. K.; Xu, J.-B. Synergistic Effects of Plasmonics and Electron Trapping in Graphene Short-Wave Infrared Photodetectors with Ultrahigh Responsivity. ACS Nano. 2017, 11, 430–437. 10.1021/acsnano.6b06172
  • Fang, X.; Bando, Y.; Liao, M.; Gautam, U. K.; Zhi, C.; Dierre, B.; Liu, B.; Zhai, T.; Sekiguchi, T.; Koide, Y.; Golberg, D. Single‐Crystalline ZnS Nanobelts as Ultraviolet‐Light Sensors. Adv. Mater. 2009, 21, 2034–2039. 10.1002/adma.200802441
  • Lähnemann, J.; Den Hertog, M.; Hille, P.; de la Mata, M.; Fournier, T.; Schörmann, J.; Arbiol, J.; Eickhoff, M.; Monroy, E. UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices. Nano Lett. 2016, 16, 3260–3267. 10.1021/acs.nanolett.6b00806
  • Wang, Z.; Yu, R.; Pan, C.; Li, Z.; Yang, J.; Yi, F.; Wang, Z. L. Light-Induced Pyroelectric Effect as an Effective Approach for Ultrafast Ultraviolet Nanosensing. Nat. Commun. 2015, 6, 8401. 10.1038/ncomms9401
  • Kong, W. Y.; Wu, G. A.; Wang, K. Y.; Zhang, T. F.; Zou, Y. F.; Wang, D. D.; Luo, L. B. Graphene‐β‐Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application. Adv. Mater. 2016, 28, 10725–10731. 10.1002/adma.201604049
  • Suess, R. J.; Leong, E.; Garrett, J. L.; Zhou, T.; Salem, R.; Munday, J. N.; Murphy, T. E.; Mittendorff, M. Mid-Infrared Time-Resolved Photoconduction in Black Phosphorus. 2D Mater. 2016, 3, 041006. 10.1088/2053–1583/3/4/041006
  • Huang, L.; Tan, W. C.; Wang, L.; Dong, B.; Lee, C.; Ang, K.-W. Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power. ACS Appl. Mater. Interfaces. 2017, 9, 36130–36136. 10.1021/acsami.7b09713
  • Yang, X.; Yang, J.; Ullah, M. I.; Xia, Y.; Liang, G.; Wang, S.; Zhang, J.; Hsu, H.-Y.; Song, H.; Tang, J. Enhanced Passivation and Carrier Collection in Ink-Processed PbS Quantum Dot Solar Cells via a Supplementary Ligand Strategy. ACS Appl. Mater. Interfaces. 2020, 12, 42217–42225. 10.1021/acsami.0c08135
  • Chen, W.; Liang, R.; Zhang, S.; Zhao, L.; Liu, Y.; Cheng, W.; Wang, J.; Xu, J. Ultrasensitive near-Infrared Photodetectors Based on MoTe2 Transistors with Tunable Photoresponse Time. Jpn. J. Appl. Phys. 2019, 58, 072004. 10.7567/1347–4065/ab266a
  • Xie, Y.; Zhang, B.; Wang, S.; Wang, D.; Wang, A.; Wang, Z.; Yu, H.; Zhang, H.; Chen, Y.; Zhao, M. Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm. Adv. Mater. 2017, 29, 1605972.
  • Xie, Y.; Liang, F.; Wang, D.; Chi, S.; Yu, H.; Lin, Z.; Zhang, H.; Chen, Y.; Wang, J.; Wu, Y. Room‐Temperature Ultrabroadband Photodetection with MoS2 by Electronic‐Structure Engineering Strategy. Adv. Mater. 2018, 30, 1804858.
  • Lai, J.; Liu, X.; Ma, J.; Wang, Q.; Zhang, K.; Ren, X.; Liu, Y.; Gu, Q.; Zhuo, X.; Lu, W. Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2. Adv. Mater. 2018, 30, 1707152.
  • Zhou, W.; Chen, J.; Gao, H.; Hu, T.; Ruan, S.; Stroppa, A.; Ren, W. Anomalous and Polarization‐Sensitive Photoresponse of Td‐WTe2 from Visible to Infrared Light. Adv. Mater. 2019, 31, 1804629.
  • Kim, J.; Heo, K.; Kang, D. H.; Shin, C.; Lee, S.; Yu, H. Y.; Park, J. H. Rhenium Diselenide (ReSe2) near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique. Adv. Sci. 2019, 6, 1901255.
  • Ali, M. H.; Kang, D.-H.; Park, J.-H. Rhenium Diselenide (ReSe2) Infrared Photodetector Enhanced by (3-Aminopropyl) Trimethoxysilane (APTMS) Treatment. Org. Electron. 2018, 53, 14–19. 10.1016/j.orgel.2017.11.006
  • Jo, S.-H.; Park, H.-Y.; Kang, D.-H.; Shim, J.; Jeon, J.; Choi, S.; Kim, M.; Park, Y.; Lee, J.; Song, Y. J.; et al. Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl) Triethoxysilane and Triphenylphosphine Treatment. Adv. Mater. 2016, 28, 6711–6718. 10.1002/adma.201601248
  • Wang, D.; Shi, P.; Xing, R.; Wu, Z.; Wei, L.; Chen, Y.; Ren, H.; Yu, C.; Li, F. Self-Powered ZnO/SrCoOx Flexible Ultraviolet Detectors Processed at Room Temperature. Mater. Des. 2021, 203, 109616. 10.1016/j.matdes.2021.109616
  • Wang, T.; Andrews, K.; Bowman, A.; Hong, T.; Koehler, M.; Yan, J.; Mandrus, D.; Zhou, Z.; Xu, Y.-Q. High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts. Nano Lett. 2018, 18, 2766–2771. 10.1021/acs.nanolett.7b04205
  • Zhou, X.; Hu, X.; Zhou, S.; Song, H.; Zhang, Q.; Pi, L.; Li, L.; Li, H.; Lü, J.; Zhai, T. Tunneling Diode Based on WSe2/SnS2 Heterostructure Incorporating High Detectivity and Responsivity. Adv. Mater. 2018, 30, 1703286.
  • Chen, Y.; Su, L.; Jiang, M.; Fang, X. Switch Type PANI/ZnO Core-Shell Microwire Heterojunction for UV Photodetection. J. Mater. Sci. Technol. 2022, 105, 259–265. 10.1016/j.jmst.2021.07.031
  • Zhang, Y.; Hu, M.; Wang, Z. Enhanced Performances of p-si/n-ZnO Self-Powered Photodetector by Interface State Modification and Pyro-Phototronic Effect. Nano Energy 2020, 71, 104630. 10.1016/j.nanoen.2020.104630
  • Dong, J.; Wang, Z.; Wang, X.; Wang, Z. L. Temperature Dependence of the Pyro-Phototronic Effect in Self-Powered p-Si/n-ZnO Nanowires Heterojuncted Ultraviolet Sensors. Nano Today 2019, 29, 100798. 10.1016/j.nantod.2019.100798
  • Liu, Y.; Niu, S.; Yang, Q.; Klein, B. D.; Zhou, Y. S.; Wang, Z. L. Theoretical Study of Piezo‐Phototronic Nano‐LEDs. Adv. Mater. 2014, 26, 7209–7216. 10.1002/adma.201402328
  • Abebe, B.; Murthy, H. A. Insights into ZnO-Based Doped Porous Nanocrystal Frameworks. RSC Adv. 2022, 12, 5816–5833. 10.1039/d1ra09152b
  • Panwar, V.; Nandi, S.; Majumder, M.; Misra, A. Self-Powered ZnO Based Pyro-Phototronic Photodetectors: Impact of Heterointerfaces and Parametric Studies. J. Mater. Chem. C 2022, 10, 12487–12510. 10.1039/D2TC02030K
  • Veeralingam, S.; Yadav, P.; Badhulika, S. An Fe-Doped ZnO/BiVO4 Heterostructure-Based Large Area, Flexible, High-Performance Broadband Photodetector with an Ultrahigh Quantum Yield. Nanoscale 2020, 12, 9152–9161. 10.1039/c9nr10776b
  • Wang, Z.; Wang, H.; Liu, B.; Qiu, W.; Zhang, J.; Ran, S.; Huang, H.; Xu, J.; Han, H.; Chen, D.; Shen, G. Transferable and Flexible Nanorod-Assembled TiO2 Cloths for Dye-Sensitized Solar Cells, Photodetectors, and Photocatalysts. ACS Nano. 2011, 5, 8412–8419. 10.1021/nn203315k
  • Boruah, B. D.; Majji, S. N.; Nandi, S.; Misra, A. Doping Controlled Pyro-Phototronic Effect in Self-Powered Zinc Oxide Photodetector for Enhancement of Photoresponse. Nanoscale 2018, 10, 3451–3459. 10.1039/c7nr08125a
  • Wang, X.; Liu, K.; Chen, X.; Li, B.; Jiang, M.; Zhang, Z.; Zhao, H.; Shen, D. Highly Wavelength-Selective Enhancement of Responsivity in Ag Nanoparticle-Modified ZnO UV Photodetector. ACS Appl. Mater. Interfaces. 2017, 9, 5574–5579. 10.1021/acsami.6b14430
  • Lu, J.; Xu, C.; Dai, J.; Li, J.; Wang, Y.; Lin, Y.; Li, P. Improved UV Photoresponse of ZnO Nanorod Arrays by Resonant Coupling with Surface Plasmons of Al Nanoparticles. Nanoscale 2015, 7, 3396–3403. 10.1039/c4nr07114j
  • Tian, C.; Jiang, D.; Li, B.; Lin, J.; Zhao, Y.; Yuan, W.; Zhao, J.; Liang, Q.; Gao, S.; Hou, J.; Qin, J. Performance Enhancement of ZnO UV Photodetectors by Surface Plasmons. ACS Appl. Mater. Interfaces. 2014, 6, 2162–2166. 10.1021/am405292p
  • Lv, Q.; Yan, F.; Wei, X.; Wang, K. High‐Performance, Self‐Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction. Adv. Opt. Mater. 2018, 6, 1700490.
  • Li, Q.; Meng, J.; Huang, J.; Li, Z. Plasmon‐Induced Pyro‐Phototronic Effect Enhancement in Self‐Powered UV–Vis Detection with a ZnO/CuO p–n Junction Device. Adv. Funct. Mater. 2022, 32, 2108903.
  • Podder, S.; Bora, J.; Thakur, S.; Gogoi, D.; Basumatary, B.; Borah, S. M.; Adhikary, N. C.; Pal, A. R. Interband Transition in Plasmonic Titanium Nitride and Its Contribution towards ZnO Based Pyro-Phototronic Application. Mater. Chem. Phys. 2022, 275, 125290. 10.1016/j.matchemphys.2021.125290
  • Matenoglou, G.; Lekka, C. E.; Koutsokeras, L. E.; Karras, G.; Kosmidis, C.; Evangelakis, G. A.; Patsalas, P. Structure and Electronic Properties of Conducting, Ternary TixTa1−xN Films. J. Appl. Phys. 2009, 105, 103714.
  • Ma, J.; Fang, C.; Chen, C.; Jin, L.; Wang, J.; Wang, S.; Tang, J.; Li, D. Chiral 2D Perovskites with a High Degree of Circularly Polarized Photoluminescence. ACS Nano. 2019, 13, 3659–3665. 10.1021/acsnano.9b00302
  • Geim, A. K.; Grigorieva, I. V. Van Der Waals Heterostructures. Nature 2013, 499, 419–425. 10.1038/nature12385
  • Jariwala, D.; Marks, T. J.; Hersam, M. C. Mixed-Dimensional Van Der Waals Heterostructures. Nat. Mater. 2017, 16, 170–181. 10.1038/nmat4703
  • Guan, X.; Yu, X.; Periyanagounder, D.; Benzigar, M. R.; Huang, J. K.; Lin, C. H.; Kim, J.; Singh, S.; Hu, L.; Liu, G. Recent Progress in Short‐to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures. Adv. Opt. Mater. 2021, 9, 2001708.
  • Herzinger, C.; Johs, B.; McGahan, W.; Woollam, J. A.; Paulson, W. Ellipsometric Determination of Optical Constants for Silicon and Thermally Grown Silicon Dioxide via a Multi-Sample, Multi-Wavelength, Multi-Angle Investigation. J. Appl. Phys. 1998, 83, 3323–3336. 10.1063/1.367101
  • Gan, X.; Mak, K. F.; Gao, Y.; You, Y.; Hatami, F.; Hone, J.; Heinz, T. F.; Englund, D. Strong Enhancement of Light–Matter Interaction in Graphene Coupled to a Photonic Crystal Nanocavity. Nano Lett. 2012, 12, 5626–5631. 10.1021/nl302746n
  • Chen, Q.; Song, Z.; Zhang, D.; Sun, H.; Fan, W. Effect of Size on the Electronic Structure and Optical Properties of Cubic CsPbBr 3 Quantum Dots. IEEE J. Quant. Electron. 2020, 56, 1–7. 10.1109/JQE.2019.2949639
  • Bar, R.; Manna, S.; Ray, S. K. Size Dependent Photoresponse Characteristics of Crystalline Ge Quantum Dots Based Photodetectors. Opt. Mater. 2016, 60, 501–505. 10.1016/j.optmat.2016.08.045
  • Zhang, M. K.; Liu, W. D.; Gong, Y. P.; Liu, Q.; Chen, Z. G. Graphene/Quantum Dot Heterostructure Photodetectors: From Material to Performance. Adv. Opt. Mater. 2022, 10, 2201889. 10.1002/adom.202201889
  • McDonald, S. A.; Konstantatos, G.; Zhang, S.; Cyr, P. W.; Klem, E. J.; Levina, L.; Sargent, E. H. Solution-Processed PbS Quantum Dot Infrared Photodetectors and Photovoltaics. Nature Mater. 2005, 4, 138–142.
  • Rath, A. K.; Bernechea, M.; Martinez, L.; Konstantatos, G. Solution‐Processed Heterojunction Solar Cells Based on p‐Type PbS Quantum Dots and n‐Type Bi2S3 Nanocrystals. Adv. Mater. 2011, 23, 3712–3717. 10.1002/adma.201101399
  • Mattevi, C.; Kim, H.; Chhowalla, M. A Review of Chemical Vapour Deposition of Graphene on Copper. J. Mater. Chem. 2011, 21, 3324–3334. 10.1039/C0JM02126A
  • Farmer, D. B.; Golizadeh-Mojarad, R.; Perebeinos, V.; Lin, Y.-M.; Tulevski, G. S.; Tsang, J. C.; Avouris, P. Chemical Doping and Electron − Hole Conduction Asymmetry in Graphene Devices. Nano Lett. 2009, 9, 388–392. 10.1021/nl803214a
  • Sun, Z.; Liu, Z.; Li, J.; Tai, G. a.; Lau, S. P.; Yan, F. Infrared Photodetectors Based on CVD‐Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity. Adv. Mater. 2012, 24, 5878–5883. 10.1002/adma.201202220
  • Zhang, D.; Gan, L.; Cao, Y.; Wang, Q.; Qi, L.; Guo, X. Understanding Charge Transfer at Pbs‐Decorated Graphene Surfaces toward a Tunable Photosensor. Adv. Mater. 2012, 24, 2715–2720. 10.1002/adma.201104597
  • Konstantatos, G.; Howard, I.; Fischer, A.; Hoogland, S.; Clifford, J.; Klem, E.; Levina, L.; Sargent, E. H. Ultrasensitive Solution-Cast Quantum Dot Photodetectors. Nature 2006, 442, 180–183. 10.1038/nature04855
  • Goossens, S.; Navickaite, G.; Monasterio, C.; Gupta, S.; Piqueras, J. J.; Pérez, R.; Burwell, G.; Nikitskiy, I.; Lasanta, T.; Galán, T.; et al. Broadband Image Sensor Array Based on Graphene–CMOS Integration. Nat. Photon. 2017, 11, 366–371. 10.1038/nphoton.2017.75
  • Zheng, L.; Zhou, W.; Ning, Z.; Wang, G.; Cheng, X.; Hu, W.; Zhou, W.; Liu, Z.; Yang, S.; Xu, K.; et al. Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility. Adv. Opt. Mater. 2018, 6, 1800985. 10.1002/adom.201800985
  • Jeong, H.; Song, J. H.; Jeong, S.; Chang, W. S. Graphene/PbS Quantum Dot Hybrid Structure for Application in near-Infrared Photodetectors. Sci. Rep. 2020, 10, 12475. 10.1038/s41598–020–69302–6
  • Du, L.; Luo, X.; Zhao, F.; Lv, W.; Zhang, J.; Peng, Y.; Tang, Y.; Wang, Y. Toward Facile Broadband High Photoresponse of Fullerene Based Phototransistor from the Ultraviolet to the near-Infrared Region. Carbon 2016, 96, 685–694. 10.1016/j.carbon.2015.10.005
  • Luo, X.; Du, L.; Lv, W.; Sun, L.; Li, Y.; Peng, Y.; Zhao, F.; Zhang, J.; Tang, Y.; Wang, Y. Charge-Transport Interfacial Modification Enhanced Ultraviolet (UV)/near-UV Phototransistor with High Sensitivity and Fast Response Speed. Synth. Met. 2015, 210, 230–235. 10.1016/j.synthmet.2015.10.007
  • Ojeda-Aristizabal, C.; Santos, E. J. G.; Onishi, S.; Yan, A.; Rasool, H. I.; Kahn, S.; Lv, Y.; Latzke, D. W.; Velasco, J.; Crommie, M. F.; et al. Molecular Arrangement and Charge Transfer in C60/Graphene Heterostructures. ACS Nano. 2017, 11, 4686–4693. 10.1021/acsnano.7b00551
  • Jnawali, G.; Rao, Y.; Beck, J. H.; Petrone, N.; Kymissis, I.; Hone, J.; Heinz, T. F. Observation of Ground-and Excited-State Charge Transfer at the C60/Graphene Interface. ACS Nano. 2015, 9, 7175–7185. 10.1021/acsnano.5b01896
  • Qin, S.; Chen, X.; Du, Q.; Nie, Z.; Wang, X.; Lu, H.; Wang, X.; Liu, K.; Xu, Y.; Shi, Y.; et al. Sensitive and Robust Ultraviolet Photodetector Array Based on Self-Assembled Graphene/C60 Hybrid Films. ACS Appl. Mater. Interfaces. 2018, 10, 38326–38333. 10.1021/acsami.8b11596
  • Chen, X.; Yang, C.; Sun, H.; Ning, S.; Zhou, H.; Zhang, H.; Wang, S.; Feng, G.; Zhou, S. Enhanced Photoresponsivity in Carbon Quantum Dots-Coupled Graphene/Silicon Schottky-Junction Photodetector. Laser Phys. Lett. 2019, 16, 076201. 10.1088/1612–202X/ab2040
  • Meinardi, F.; Ehrenberg, S.; Dhamo, L.; Carulli, F.; Mauri, M.; Bruni, F.; Simonutti, R.; Kortshagen, U.; Brovelli, S. Highly Efficient Luminescent Solar Concentrators Based on Earth-Abundant Indirect-Bandgap Silicon Quantum Dots. Nat. Photon. 2017, 11, 177–185. 10.1038/nphoton.2017.5
  • Hori, Y.; Kano, S.; Sugimoto, H.; Imakita, K.; Fujii, M. Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals. Nano Lett. 2016, 16, 2615–2620. 10.1021/acs.nanolett.6b00225
  • Zhou, S.; Pi, X.; Ni, Z.; Ding, Y.; Jiang, Y.; Jin, C.; Delerue, C.; Yang, D.; Nozaki, T. Comparative Study on the Localized Surface Plasmon Resonance of Boron-and Phosphorus-Doped Silicon Nanocrystals. ACS Nano. 2015, 9, 378–386. 10.1021/nn505416r
  • Kramer, N. J.; Schramke, K. S.; Kortshagen, U. R. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus. Nano Lett. 2015, 15, 5597–5603. 10.1021/acs.nanolett.5b02287
  • Shi, S.-F.; Xu, X.; Ralph, D.; McEuen, P. Plasmon Resonance in Individual Nanogap Electrodes Studied Using Graphene Nanoconstrictions as Photodetectors. Nano Lett. 2011, 11, 1814–1818. 10.1021/nl200522t
  • Ni, Z.; Pi, X.; Zhou, S.; Nozaki, T.; Grandidier, B.; Yang, D. Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals. Adv. Opt. Mater. 2016, 4, 700–707. 10.1002/adom.201500706
  • Ni, Z.; Ma, L.; Du, S.; Xu, Y.; Yuan, M.; Fang, H.; Wang, Z.; Xu, M.; Li, D.; Yang, J.; et al. Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultrabroadband Photodetection of Graphene-Based Hybrid Phototransistors. ACS Nano. 2017, 11, 9854–9862. 10.1021/acsnano.7b03569
  • Wu, D.; Yan, K.; Zhou, Y.; Wang, H.; Lin, L.; Peng, H.; Liu, Z. Plasmon-Enhanced Photothermoelectric Conversion in Chemical Vapor Deposited Graphene p–n Junctions. J. Am. Chem. Soc. 2013, 135, 10926–10929. 10.1021/ja404890n
  • Yu, X.; Li, Y.; Hu, X.; Zhang, D.; Tao, Y.; Liu, Z.; He, Y.; Haque, M. A.; Liu, Z.; Wu, T.; Wang, Q. J. Narrow Bandgap Oxide Nanoparticles Coupled with Graphene for High Performance Mid-Infrared Photodetection. Nat. Commun. 2018, 9, 4299. 10.1038/s41467–018–06776-z
  • Mittiga, A.; Salza, E.; Sarto, F.; Tucci, M.; Vasanthi, R. Heterojunction Solar Cell with 2% Efficiency Based on a Cu2O Substrate. Appl. Phys. Lett. 2006, 88, 163502.
  • Siripala, W.; Ivanovskaya, A.; Jaramillo, T. F.; Baeck, S.-H.; McFarland, E. W. A Cu2O/TiO2 Heterojunction Thin Film Cathode for Photoelectrocatalysis. Sol. Energy Mater. Sol. Cells 2003, 77, 229–237. 10.1016/S0927–0248(02)00343–4
  • Hara, M.; Kondo, T.; Komoda, M.; Ikeda, S.; Kondo, J. N.; Domen, K.; Hara, M.; Shinohara, K.; Tanaka, A. Cu2O as a Photocatalyst for Overall Water Splitting under Visible Light Irradiation. Chem. Commun. 1998, 1998, 357–358. 10.1039/a707440i
  • Zhou, F.; Li, Z.; Shenoy, G. J.; Li, L.; Liu, H. Enhanced Room-Temperature Corrosion of Copper in the Presence of Graphene. ACS Nano. 2013, 7, 6939–6947. 10.1021/nn402150t
  • Yin, X.; Li, Y.; Ke, F.; Lin, C.; Zhao, H.; Gan, L.; Luo, Z.; Zhao, R.; Heinz, T. F.; Hu, Z. Evolution of the Raman Spectrum of Graphene Grown on Copper upon Oxidation of the Substrate. Nano Res. 2014, 7, 1613–1622. 10.1007/s12274–014–0521–0
  • Liu, Q.; Tian, H.; Li, J.; Hu, A.; He, X.; Sui, M.; Guo, X. Hybrid Graphene/Cu2O Quantum Dot Photodetectors with Ultrahigh Responsivity. Adv. Opt. Mater. 2019, 7, 1900455.
  • Zheng, Z.; Yao, J.; Zhu, L.; Jiang, W.; Wang, B.; Yang, G.; Li, J. Tin Dioxide Quantum Dots Coupled with Graphene for High-Performance Bulk-Silicon Schottky Photodetector. Mater. Horiz. 2018, 5, 727–737. 10.1039/C8MH00500A
  • Qiao, H.; Yuan, J.; Xu, Z.; Chen, C.; Lin, S.; Wang, Y.; Song, J.; Liu, Y.; Khan, Q.; Hoh, H. Y.; et al. Broadband Photodetectors Based on Graphene–Bi2Te3 Heterostructure. ACS Nano. 2015, 9, 1886–1894. 10.1021/nn506920z
  • Lhuillier, E.; Keuleyan, S.; Rekemeyer, P.; Guyot-Sionnest, P. Thermal Properties of Mid-Infrared Colloidal Quantum Dot Detectors. J. Appl. Phys. 2011, 110, 033110.
  • Keuleyan, S. E.; Guyot-Sionnest, P.; Delerue, C.; Allan, G. Mercury Telluride Colloidal Quantum Dots: Electronic Structure, Size-Dependent Spectra, and Photocurrent Detection up to 12 μm. ACS Nano. 2014, 8, 8676–8682. 10.1021/nn503805h
  • Lhuillier, E.; Keuleyan, S.; Liu, H.; Guyot-Sionnest, P. Colloidal HgTe Material for Low-Cost Detection into the MWIR. Journal Elect. Mater. 2012, 41, 2725–2729. 10.1007/s11664–012–2006–9
  • Jana, M. K.; Chithaiah, P.; Murali, B.; Krupanidhi, S.; Biswas, K.; Rao, C. Near Infrared Detectors Based on HgSe and HgCdSe Quantum Dots Generated at the Liquid–Liquid Interface. J. Mater. Chem. C 2013, 1, 6184–6187. 10.1039/c3tc31344a
  • Keuleyan, S.; Lhuillier, E.; Brajuskovic, V.; Guyot-Sionnest, P. Mid-Infrared HgTe Colloidal Quantum Dot Photodetectors. Nat. Photon. 2011, 5, 489–493. 10.1038/nphoton.2011.142
  • Goubet, N.; Jagtap, A.; Livache, C.; Martinez, B.; Portalès, H.; Xu, X. Z.; Lobo, R. P.; Dubertret, B.; Lhuillier, E. Terahertz HgTe Nanocrystals: Beyond Confinement. J. Am. Chem. Soc. 2018, 140, 5033–5036. 10.1021/jacs.8b02039
  • Chen, M.; Lan, X.; Tang, X.; Wang, Y.; Hudson, M. H.; Talapin, D. V.; Guyot-Sionnest, P. High Carrier Mobility in HgTe Quantum Dot Solids Improves mid-IR Photodetectors. ACS Photonics 2019, 6, 2358–2365. 10.1021/acsphotonics.9b01050
  • Tang, X.; Ackerman, M. M.; Shen, G.; Guyot‐Sionnest, P. Towards Infrared Electronic Eyes: Flexible Colloidal Quantum Dot Photovoltaic Detectors Enhanced by Resonant Cavity. Small 2019, 15, e1804920. 10.1002/smll.201804920
  • Ackerman, M. M.; Tang, X.; Guyot-Sionnest, P. Fast and Sensitive Colloidal Quantum Dot Mid-Wave Infrared Photodetectors. ACS Nano. 2018, 12, 7264–7271. 10.1021/acsnano.8b03425
  • Tang, X.; Ackerman, M. M.; Chen, M.; Guyot-Sionnest, P. Dual-Band Infrared Imaging Using Stacked Colloidal Quantum Dot Photodiodes. Nat. Photon. 2019, 13, 277–282. 10.1038/s41566–019–0362–1
  • Huo, N.; Gupta, S.; Konstantatos, G. MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm. Adv. Mater. 2017, 29, 1606576. 10.1002/adma.201606576
  • Tang, X.; Wu, G. F.; Lai, K. W. C. Twisted Graphene-Assisted Photocarrier Transfer from HgSe Colloidal Quantum Dots into Silicon with Enhanced Collection and Transport Efficiency. Appl. Phys. Lett. 2017, 110, 241104.
  • Noumbé, U. N.; Gréboval, C.; Livache, C.; Chu, A.; Majjad, H.; Parra López, L. E.; Mouafo, L. D. N.; Doudin, B.; Berciaud, S.; Chaste, J.; et al. Reconfigurable 2D/0D p–n Graphene/HgTe Nanocrystal Heterostructure for Infrared Detection. ACS Nano. 2020, 14, 4567–4576. 10.1021/acsnano.0c00103
  • Morales-Acevedo, A. Thin Film CdS/CdTe Solar Cells: Research Perspectives. Sol. Energy 2006, 80, 675–681. 10.1016/j.solener.2005.10.008
  • Kashiwaba, Y.; Isojima, K.; Ohta, K. Improvement in the Efficiency of Cu-Doped CdS/Non-Doped CdS Photovoltaic Cells Fabricated by an All-Vacuum Process. Sol. Energy Mater. Sol. Cells 2003, 75, 253–259. 10.1016/S0927–0248(02)00167–8
  • Zhang, Y.; Zhang, F.; Wang, H.; Wang, L.; Wang, F.; Lin, Q.; Shen, H.; Li, L. S. High-Efficiency CdSe/CdS Nanorod–Based Red Light–Emitting Diodes. Opt. Express. 2019, 27, 7935–7944. 10.1364/OE.27.007935
  • Yang, K.; Yang, Z.; Zhang, C.; Gu, Y.; Wei, J.; Li, Z.; Ma, C.; Yang, X.; Song, K.; Li, Y.; et al. Recent Advances in CdS-Based Photocatalysts for CO2 Photocatalytic Conversion. Chem. Eng. J. 2021, 418, 129344. 10.1016/j.cej.2021.129344
  • Galstyan, V. “Quantum Dots: Perspectives in Next-Generation Chemical Gas Sensors”‒a Review. Anal. Chim. Acta. 2021, 1152, 238192. 10.1016/j.aca.2020.12.067
  • Chan, Y.; Dahua, Z.; Jun, Y.; Linlong, T.; Chongqian, L.; Jun, S. Fabrication of Hybrid Graphene/CdS Quantum Dots Film with the Flexible Photo-Detecting Performance. Phys. E 2020, 124, 114216. 10.1016/j.physe.2020.114216
  • Tian, W.; Zhai, T.; Zhang, C.; Li, S.-L.; Wang, X.; Liu, F.; Liu, D.; Cai, X.; Tsukagoshi, K.; Golberg, D.; Bando, Y. Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO2 Heterojunction Nanofibers. Adv. Mater. 2013, 25, 4625–4630. 10.1002/adma.201301828
  • Park, S.; An, S.; Mun, Y.; Lee, C. UV-Enhanced NO2 Gas Sensing Properties of SnO2-Core/ZnO-Shell Nanowires at Room Temperature. ACS Appl. Mater. Interfaces. 2013, 5, 4285–4292. 10.1021/am400500a
  • Mukherjee, S.; Bhattacharya, D.; Patra, S.; Paul, S.; Mitra, R. K.; Mahadevan, P.; Pal, A. N.; Ray, S. K. High-Responsivity Gate-Tunable Ultraviolet–Visible Broadband Phototransistor Based on Graphene–WS2 Mixed-Dimensional (2D-0D) Heterostructure. ACS Appl. Mater. Interfaces. 2022, 14, 5775–5784. 10.1021/acsami.1c18999
  • Kumar, A.; Ahluwalia, P. Electronic Structure of Transition Metal Dichalcogenides Monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-Initio Theory: New Direct Band Gap Semiconductors. Eur. Phys. J. B 2012, 85, 1–7. 10.1140/epjb/e2012–30070-x
  • Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 2010, 105, 136805. 10.1103/PhysRevLett.105.136805
  • Sharma, A.; Senguttuvan, T.; Ojha, V.; Husale, S. Novel Synthesis of Topological Insulator Based Nanostructures (Bi2Te3) Demonstrating High Performance Photodetection. Sci. Rep. 2019, 9, 3804. 10.1038/s41598–019–40394-z
  • Xiu, F.-X.; Zhao, T.-T. Topological Insulator Nanostructures and Devices. Chin. Phys. B 2013, 22, 096104. 10.1088/1674–1056/22/9/096104
  • Dang, W.; Peng, H.; Li, H.; Wang, P.; Liu, Z. Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene. Nano Lett. 2010, 10, 2870–2876. 10.1021/nl100938e
  • Gao, G.; Gao, W.; Cannuccia, E.; Taha-Tijerina, J.; Balicas, L.; Mathkar, A.; Narayanan, T. N.; Liu, Z.; Gupta, B. K.; Peng, J.; et al. Artificially Stacked Atomic Layers: Toward New Van Der Waals Solids. Nano Lett. 2012, 12, 3518–3525. 10.1021/nl301061b
  • Borges, Z. V.; Poffo, C. M.; de Lima, J. C.; de Souza, S. M.; Trichês, D. M.; Nogueira, T. P. O.; Manzato, L.; de Biasi, R. S. Study of Structural, Optical and Thermal Properties of Nanostructured SnSe2 Prepared by Mechanical Alloying. Mater. Chem. Phys. 2016, 169, 47–54. 10.1016/j.matchemphys.2015.11.026
  • Solati, E.; Dejam, L.; Dorranian, D. Effect of Laser Pulse Energy and Wavelength on the Structure, Morphology and Optical Properties of ZnO Nanoparticles. Opt. Laser Technol. 2014, 58, 26–32. 10.1016/j.optlastec.2013.10.031
  • Li, X.; Li, L.; Zhao, H.; Ruan, S.; Zhang, W.; Yan, P.; Sun, Z.; Liang, H.; Tao, K. SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors. Nanomaterials 2019, 9, 1324. 10.3390/nano9091324
  • Sun, K.; Jing, Y.; Park, N.; Li, C.; Bando, Y.; Wang, D. Solution Synthesis of Large-Scale, High-Sensitivity ZnO/Si Hierarchical Nanoheterostructure Photodetectors. J. Am. Chem. Soc. 2010, 132, 15465–15467. 10.1021/ja1038424
  • Rothschild, A.; Komem, Y. The Effect of Grain Size on the Sensitivity of Nanocrystalline Metal-Oxide Gas Sensors. J. Appl. Phys. 2004, 95, 6374–6380. 10.1063/1.1728314
  • Shao, D.; Sun, X.; Xie, M.; Sun, H.; Lu, F.; George, S. M.; Lian, J.; Sawyer, S. ZnO Quantum Dots-Graphene Composite for Efficient Ultraviolet Sensing. Mater. Lett. 2013, 112, 165–168. 10.1016/j.matlet.2013.09.031
  • Liu, Q.; Gong, M.; Cook, B.; Ewing, D.; Casper, M.; Stramel, A.; Wu, J. Transfer-Free and Printable Graphene/ZnO-Nanoparticle Nanohybrid Photodetectors with High Performance. J. Mater. Chem. C 2017, 5, 6427–6432. 10.1039/C7TC01032J
  • Nie, B.; Hu, J.-G.; Luo, L.-B.; Xie, C.; Zeng, L.-H.; Lv, P.; Li, F.-Z.; Jie, J.-S.; Feng, M.; Wu, C.-Y.; et al. Monolayer Graphene Film on ZnO Nanorod Array for High‐Performance Schottky Junction Ultraviolet Photodetectors. Small 2013, 9, 2872–2879. 10.1002/smll.201203188
  • Kumar, M.; Noh, Y.; Polat, K.; Okyay, A. K.; Lee, D. Metal–Semiconductor–Metal UV Photodetector Based on Ga Doped ZnO/Graphene Interface. Solid State Commun. 2015, 224, 37–40. 10.1016/j.ssc.2015.10.007
  • Kufer, D.; Nikitskiy, I.; Lasanta, T.; Navickaite, G.; Koppens, F. H.; Konstantatos, G. Hybrid 2D–0D MoS2–PbS Quantum Dot Photodetectors. Adv. Mater. 2015, 27, 176–180. 10.1002/adma.201402471
  • Nalwa, H. S. A Review of Molybdenum Disulfide (MoS2) Based Photodetectors: From Ultra-Broadband, Self-Powered to Flexible Devices. RSC Adv. 2020, 10, 30529–30602. 10.1039/d0ra03183f
  • Lopez-Sanchez, O.; Lembke, D.; Kayci, M.; Radenovic, A.; Kis, A. Ultrasensitive Photodetectors Based on Monolayer MoS2. Nat. Nanotechnol. 2013, 8, 497–501. 10.1038/nnano.2013.100
  • Ni, P.; Bugallo, A. D. L.; Yang, X.; Arreola, V. M. A.; Salazar, M. F.; Strupiechonski, E.; Alloing, B.; Shan, C.; Genevet, P. Hybrid MoS2-Gap-Mode Metasurface Photodetectors. J. Phys. D: Appl. Phys. 2019, 52, 374001. 10.1088/1361–6463/ab2aba
  • Ni, P.; De Luna Bugallo, A.; Arellano Arreola, V. M.; Salazar, M. F.; Strupiechonski, E.; Brändli, V.; Sawant, R.; Alloing, B.; Genevet, P. Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2-Gap-Mode Metasurfaces. ACS Photon. 2019, 6, 1594–1601. 10.1021/acsphotonics.9b00433
  • Sundaram, R.; Engel, M.; Lombardo, A.; Krupke, R.; Ferrari, A.; Avouris, P.; Steiner, M. Electroluminescence in Single Layer MoS2. Nano Lett. 2013, 13, 1416–1421. 10.1021/nl400516a
  • Bernardi, M.; Palummo, M.; Grossman, J. C. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials. Nano Lett. 2013, 13, 3664–3670. 10.1021/nl401544y
  • Wu, J.; Yuan, H.; Meng, M.; Chen, C.; Sun, Y.; Chen, Z.; Dang, W.; Tan, C.; Liu, Y.; Yin, J.; et al. High Electron Mobility and Quantum Oscillations in Non-Encapsulated Ultrathin Semiconducting Bi2O2Se. Nat. Nanotechnol. 2017, 12, 530–534. 10.1038/nnano.2017.43
  • Chen, C.; Wang, M.; Wu, J.; Fu, H.; Yang, H.; Tian, Z.; Tu, T.; Peng, H.; Sun, Y.; Xu, X.; et al. Electronic Structures and Unusually Robust Bandgap in an Ultrahigh-Mobility Layered Oxide Semiconductor, Bi2O2Se. Sci. Adv. 2018, 4, eaat8355. 10.1126/sciadv.aat8355
  • Yin, J.; Tan, Z.; Hong, H.; Wu, J.; Yuan, H.; Liu, Y.; Chen, C.; Tan, C.; Yao, F.; Li, T.; et al. Ultrafast and Highly Sensitive Infrared Photodetectors Based on Two-Dimensional Oxyselenide Crystals. Nat. Commun. 2018, 9, 1–7. 10.1038/s41467–018–05874–2
  • Luo, P.; Zhuge, F.; Wang, F.; Lian, L.; Liu, K.; Zhang, J.; Zhai, T. PbSe Quantum Dots Sensitized High-Mobility Bi2O2Se Nanosheets for High-Performance and Broadband Photodetection beyond 2 μm. ACS Nano. 2019, 13, 9028–9037. 10.1021/acsnano.9b03124
  • Kolli, C. S. R.; Selamneni, V.; A Muñiz Martínez, B.; Fest Carreno, A.; Emanuel Sanchez, D.; Terrones, M.; Strupiechonski, E.; De Luna Bugallo, A.; Sahatiya, P. Broadband, Ultra-High-Responsive Monolayer MoS2/SnS2 Quantum-Dot-Based Mixed-Dimensional Photodetector. ACS Appl. Mater. Interfaces. 2022, 14, 15415–15425. 10.1021/acsami.2c02624
  • Wang, L.; Jie, J.; Shao, Z.; Zhang, Q.; Zhang, X.; Wang, Y.; Sun, Z.; Lee, S. T. MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–near Infrared Photodetectors. Adv. Funct. Mater. 2015, 25, 2910–2919. 10.1002/adfm.201500216
  • Zhou, X.; Zhou, N.; Li, C.; Song, H.; Zhang, Q.; Hu, X.; Gan, L.; Li, H.; Lü, J.; Luo, J.; et al. Vertical Heterostructures Based on SnSe2/MoS2 for High Performance Photodetectors. 2D Mater. 2017, 4, 025048. 10.1088/2053–1583/aa6422
  • Gong, M.; Liu, Q.; Cook, B.; Kattel, B.; Wang, T.; Chan, W.-L.; Ewing, D.; Casper, M.; Stramel, A.; Wu, J. Z. All-Printable ZnO Quantum Dots/Graphene Van Der Waals Heterostructures for Ultrasensitive Detection of Ultraviolet Light. ACS Nano. 2017, 11, 4114–4123. 10.1021/acsnano.7b00805
  • Sierra, J. F.; Fabian, J.; Kawakami, R. K.; Roche, S.; Valenzuela, S. O. Van Der Waals Heterostructures for Spintronics and Opto-Spintronics. Nat. Nanotechnol. 2021, 16, 856–868. 10.1038/s41565–021–00936-x
  • Hunt, B.; Sanchez-Yamagishi, J. D.; Young, A. F.; Yankowitz, M.; LeRoy, B. J.; Watanabe, K.; Taniguchi, T.; Moon, P.; Koshino, M.; Jarillo-Herrero, P.; Ashoori, R. C. Massive Dirac Fermions and Hofstadter Butterfly in a Van Der Waals Heterostructure. Science 2013, 340, 1427–1430. 10.1126/science.1237240
  • Cao, Y.; Fatemi, V.; Fang, S.; Watanabe, K.; Taniguchi, T.; Kaxiras, E.; Jarillo-Herrero, P. Unconventional Superconductivity in Magic-Angle Graphene Superlattices. Nature 2018, 556, 43–50. 10.1038/nature26160
  • Merkl, P.; Mooshammer, F.; Steinleitner, P.; Girnghuber, A.; Lin, K.-Q.; Nagler, P.; Holler, J.; Schüller, C.; Lupton, J. M.; Korn, T.; et al. Ultrafast Transition between Exciton Phases in Van Der Waals Heterostructures. Nat. Mater. 2019, 18, 691–696. 10.1038/s41563–019–0337–0
  • Wang, G.; Chernikov, A.; Glazov, M. M.; Heinz, T. F.; Marie, X.; Amand, T.; Urbaszek, B. Colloquium: Excitons in Atomically Thin Transition Metal Dichalcogenides. Rev. Mod. Phys. 2018, 90, 021001. 10.1103/RevModPhys.90.021001
  • Rivera, P.; Yu, H.; Seyler, K. L.; Wilson, N. P.; Yao, W.; Xu, X. Interlayer Valley Excitons in Heterobilayers of Transition Metal Dichalcogenides. Nat. Nanotechnol. 2018, 13, 1004–1015. 10.1038/s41565–018–0193–0
  • Zheng, Z. Q.; Zhu, L. F.; Wang, B. In2O3 Nanotower Hydrogen Gas Sensors Based on Both Schottky Junction and Thermoelectronic Emission. Nanosc. Res. Lett. 2015, 10, 1–14.
  • Vabbina, P.; Choudhary, N.; Chowdhury, A.-A.; Sinha, R.; Karabiyik, M.; Das, S.; Choi, W.; Pala, N. Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction. ACS Appl. Mater. Interfaces. 2015, 7, 15206–15213. 10.1021/acsami.5b00887
  • Yu, W.; Li, S.; Zhang, Y.; Ma, W.; Sun, T.; Yuan, J.; Fu, K.; Bao, Q. Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility. Small 2017, 13, 1700268. 10.1002/smll.201700268
  • Tang, C.; Zhang, Z.; Lai, S.; Tan, Q.; Gao, W. b Magnetic Proximity Effect in Graphene/CrBr3 Van Der Waals Heterostructures. Adv. Mater. 2020, 32, 1908498.
  • Stein, M.; Lammers, C.; Drexler, M.; Fuchs, C.; Stolz, W.; Koch, M. Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures. Phys. Rev. Lett. 2018, 121, 017401. 10.1103/PhysRevLett.121.017401
  • Massicotte, M.; Schmidt, P.; Vialla, F.; Watanabe, K.; Taniguchi, T.; Tielrooij, K.-J.; Koppens, F. H. Photo-Thermionic Effect in Vertical Graphene Heterostructures. Nat. Commun. 2016, 7, 12174. 10.1038/ncomms12174
  • Na, J.; Joo, M.-K.; Shin, M.; Huh, J.; Kim, J.-S.; Piao, M.; Jin, J.-E.; Jang, H.-K.; Choi, H. J.; Shim, J. H.; Kim, G.-T. Low-Frequency Noise in Multilayer MoS2 Field-Effect Transistors: The Effect of High-k Passivation. Nanoscale 2014, 6, 433–441. 10.1039/c3nr04218a
  • Kufer, D.; Konstantatos, G. Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed. Nano Lett. 2015, 15, 7307–7313. 10.1021/acs.nanolett.5b02559
  • Czerniak-Łosiewicz, K.; Gertych, A. P.; Świniarski, M.; Judek, J.; Zdrojek, M. Time Dependence of Photocurrent in Chemical Vapor Deposition MoS2 Monolayer—Intrinsic Properties and Environmental Effects. J. Phys. Chem. C 2020, 124, 18741–18746. 10.1021/acs.jpcc.0c04452
  • Zhang, W.; Chuu, C.-P.; Huang, J.-K.; Chen, C.-H.; Tsai, M.-L.; Chang, Y.-H.; Liang, C.-T.; Chen, Y.-Z.; Chueh, Y.-L.; He, J.-H.; et al. Ultrahigh-Gain Photodetectors Based on Atomically Thin graphene-MoS2 Heterostructures. Sci. Rep. 2014, 4, 3826. 10.1038/srep03826
  • Chen, C.; Feng, Z.; Feng, Y.; Yue, Y.; Qin, C.; Zhang, D.; Feng, W. Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors. ACS Appl. Mater. Interfaces. 2016, 8, 19004–19011. 10.1021/acsami.6b00751
  • Hoang, A. T.; Katiyar, A. K.; Shin, H.; Mishra, N.; Forti, S.; Coletti, C.; Ahn, J.-H. Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal–Organic Vapor-Phase Epitaxy and Their Application in Photodetectors. ACS Appl. Mater. Interfaces. 2020, 12, 44335–44344. 10.1021/acsami.0c12894
  • Xu, H.; Wu, J.; Feng, Q.; Mao, N.; Wang, C.; Zhang, J. High Responsivity and Gate Tunable Graphene‐MoS2 Hybrid Phototransistor. Small 2014, 10, 2300–2306. 10.1002/smll.201303670
  • Deng, W.; Chen, Y.; You, C.; Liu, B.; Yang, Y.; Shen, G.; Li, S.; Sun, L.; Zhang, Y.; Yan, H. High Detectivity from a Lateral Graphene–MoS2 Schottky Photodetector Grown by Chemical Vapor Deposition. Adv. Electron. Mater. 2018, 4, 1800069.
  • Beckmann, Y.; Grundmann, A.; Daniel, L.; Abdelbaky, M.; McAleese, C.; Wang, X.; Conran, B.; Pasko, S.; Krotkus, S.; Heuken, M.; et al. Role of Surface Adsorbates on the Photoresponse of (MO) CVD-Grown Graphene–MoS2 Heterostructure Photodetectors. ACS Appl. Mater. Interfaces. 2022, 14, 35184–35193. 10.1021/acsami.2c06047
  • Li, X.; Wu, J.; Mao, N.; Zhang, J.; Lei, Z.; Liu, Z.; Xu, H. A Self-Powered Graphene–MoS2 Hybrid Phototransistor with Fast Response Rate and High on–off Ratio. Carbon 2015, 92, 126–132. 10.1016/j.carbon.2015.03.064
  • Kim, J.; Park, S.; Jang, H.; Koirala, N.; Lee, J.-B.; Kim, U. J.; Lee, H.-S.; Roh, Y.-G.; Lee, H.; Sim, S.; et al. Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene–Bi2Se3 Heterostructure. ACS Photon. 2017, 4, 482–488. 10.1021/acsphotonics.6b00972
  • Chen, Z.; Biscaras, J.; Shukla, A. A High Performance Graphene/Few-Layer InSe Photo-Detector. Nanoscale 2015, 7, 5981–5986. 10.1039/c5nr00400d
  • Heremans, J. P.; Cava, R. J.; Samarth, N. Tetradymites as Thermoelectrics and Topological Insulators. Nat. Rev. Mater. 2017, 2, 1–21. 10.1038/natrevmats.2017.49
  • Cao, Y.; Waugh, J. A.; Zhang, X.-W.; Luo, J.-W.; Wang, Q.; Reber, T. J.; Mo, S. K.; Xu, Z.; Yang, A.; Schneeloch, J.; et al. Mapping the Orbital Wavefunction of the Surface States in Three-Dimensional Topological Insulators. Nat.Phys. 2013, 9, 499–504. 10.1038/nphys2685
  • Vu, Q. A.; Lee, J. H.; Nguyen, V. L.; Shin, Y. S.; Lim, S. C.; Lee, K.; Heo, J.; Park, S.; Kim, K.; Lee, Y. H.; Yu, W. J. Tuning Carrier Tunneling in Van Der Waals Heterostructures for Ultrahigh Detectivity. Nano Lett. 2017, 17, 453–459. 10.1021/acs.nanolett.6b04449
  • Cui, X.; Lee, G.-H.; Kim, Y. D.; Arefe, G.; Huang, P. Y.; Lee, C.-H.; Chenet, D. A.; Zhang, X.; Wang, L.; Ye, F.; et al. Multi-Terminal Transport Measurements of MoS2 Using a Van Der Waals Heterostructure Device Platform. Nat. Nanotechnol. 2015, 10, 534–540. 10.1038/nnano.2015.70
  • Fukushima, S.; Fukamachi, S.; Shimatani, M.; Kawahara, K.; Ago, H.; Ogawa, S. Graphene-Based Deep-Ultraviolet Photodetectors with Ultrahigh Responsivity Using Chemical Vapor Deposition of Hexagonal Boron Nitride to Achieve Photogating. Opt. Mater. Express 2022, 12, 2090–2101. 10.1364/OME.457545
  • Liu, Y.; Shivananju, B. N.; Wang, Y.; Zhang, Y.; Yu, W.; Xiao, S.; Sun, T.; Ma, W.; Mu, H.; Lin, S.; et al. Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure. ACS Appl. Mater. Interfaces. 2017, 9, 36137–36145. 10.1021/acsami.7b09889
  • Favron, A.; Gaufrès, E.; Fossard, F.; Phaneuf-L'Heureux, A.-L.; Tang, N. Y.-W.; Lévesque, P. L.; Loiseau, A.; Leonelli, R.; Francoeur, S.; Martel, R. Photooxidation and Quantum Confinement Effects in Exfoliated Black Phosphorus. Nat. Mater. 2015, 14, 826–832. 10.1038/nmat4299
  • Bhaviripudi, S.; Jia, X.; Dresselhaus, M. S.; Kong, J. Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst. Nano Lett. 2010, 10, 4128–4133. 10.1021/nl102355e
  • Shi, Y.; Zhou, W.; Lu, A.-Y.; Fang, W.; Lee, Y.-H.; Hsu, A. L.; Kim, S. M.; Kim, K. K.; Yang, H. Y.; Li, L.-J.; et al. Van Der Waals Epitaxy of MoS2 Layers Using Graphene as Growth Templates. Nano Lett. 2012, 12, 2784–2791. 10.1021/nl204562j
  • Zhang, J.; Huang, Y.; Tan, Z.; Li, T.; Zhang, Y.; Jia, K.; Lin, L.; Sun, L.; Chen, X.; Li, Z. Low‐Temperature Heteroepitaxy of 2D PbI2/Graphene for Large‐Area Flexible Photodetectors. Adv. Mater. 2018, 30, 1803194.
  • Wen, Y.; Yin, L.; He, P.; Wang, Z.; Zhang, X.; Wang, Q.; Shifa, T. A.; Xu, K.; Wang, F.; Zhan, X.; et al. Integrated High-Performance Infrared Phototransistor Arrays Composed of Nonlayered PbS–MoS2 Heterostructures with Edge Contacts. Nano Lett. 2016, 16, 6437–6444. 10.1021/acs.nanolett.6b02881
  • Wen, Y.; He, P.; Wang, Q.; Yao, Y.; Zhang, Y.; Hussain, S.; Wang, Z.; Cheng, R.; Yin, L.; Getaye Sendeku, M.; et al. Gapless Van Der Waals Heterostructures for Infrared Optoelectronic Devices. ACS Nano. 2019, 13, 14519–14528. 10.1021/acsnano.9b08375
  • Shin, G. H.; Park, C.; Lee, K. J.; Jin, H. J.; Choi, S.-Y. Ultrasensitive Phototransistor Based on WSe2–MoS2 Van Der Waals Heterojunction. Nano Lett. 2020, 20, 5741–5748. 10.1021/acs.nanolett.0c01460
  • Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; et al. A Fast and Zero-Biased Photodetector Based on GaTe–InSe Vertical 2D p–n Heterojunction. 2D Mater. 2018, 5, 025008. 10.1088/2053–1583/aaa721
  • Gao, W.; Zheng, Z.; Li, Y.; Zhao, Y.; Xu, L.; Deng, H.; Li, J. High Performance Tin Diselenide Photodetectors Dependent on Thickness: A Vertical Graphene Sandwiched Device and Interfacial Mechanism. Nanoscale 2019, 11, 13309–13317. 10.1039/c9nr01966a
  • Du, Y.; Yin, Z.; Rui, X.; Zeng, Z.; Wu, X.-J.; Liu, J.; Zhu, Y.; Zhu, J.; Huang, X.; Yan, Q.; Zhang, H. A Facile, Relative Green, and Inexpensive Synthetic Approach toward Large-Scale Production of SnS 2 Nanoplates for High-Performance Lithium-Ion Batteries. Nanoscale 2013, 5, 1456–1459. 10.1039/c2nr33458e
  • Cui, B.; Han, J.; Xing, Y.; Lv, W.; Lei, T.; Ma, H.; Zeng, Z.; Zhang, B. Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS2 Van Der Waals Heterostructure. Phys. Stat. Soli. (a) 2021, 218, 2100228. 10.1002/pssa.202100228
  • Wang, Z.; Safdar, M.; Mirza, M.; Xu, K.; Wang, Q.; Huang, Y.; Wang, F.; Zhan, X.; He, J. High-Performance Flexible Photodetectors Based on GaTe Nanosheets. Nanoscale 2015, 7, 7252–7258. 10.1039/c4nr07313d
  • Zhou, Y.; Nie, Y.; Liu, Y.; Yan, K.; Hong, J.; Jin, C.; Zhou, Y.; Yin, J.; Liu, Z.; Peng, H. Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets. ACS Nano. 2014, 8, 1485–1490. 10.1021/nn405529r
  • Yamamoto, A.; Syouji, A.; Goto, T.; Kulatov, E.; Ohno, K.; Kawazoe, Y.; Uchida, K.; Miura, N. Excitons and Band Structure of Highly Anisotropic GaTe Single Crystals. Phys. Rev. B 2001, 64, 035210. 10.1103/PhysRevB.64.035210
  • Bandurin, D. A.; Tyurnina, A. V.; Yu, G. L.; Mishchenko, A.; Zólyomi, V.; Morozov, S. V.; Kumar, R. K.; Gorbachev, R. V.; Kudrynskyi, Z. R.; Pezzini, S.; et al. High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe. Nat. Nanotechnol. 2017, 12, 223–227. 10.1038/nnano.2016.242
  • Sucharitakul, S.; Goble, N. J.; Kumar, U. R.; Sankar, R.; Bogorad, Z. A.; Chou, F.-C.; Chen, Y.-T.; Gao, X. P. Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs. Nano Lett. 2015, 15, 3815–3819. 10.1021/acs.nanolett.5b00493
  • Yang, S.; Wang, C.; Ataca, C.; Li, Y.; Chen, H.; Cai, H.; Suslu, A.; Grossman, J. C.; Jiang, C.; Liu, Q.; Tongay, S. Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure. ACS Appl. Mater. Interfaces. 2016, 8, 2533–2539. 10.1021/acsami.5b10001
  • Wang, F.; Wang, Z.; Xu, K.; Wang, F.; Wang, Q.; Huang, Y.; Yin, L.; He, J. Tunable GaTe-MoS2 Van Der Waals p–n Junctions with Novel Optoelectronic Performance. Nano Lett. 2015, 15, 7558–7566. 10.1021/acs.nanolett.5b03291
  • Capozzi, V.; Montagna, M. Optical Spectroscopy of Extrinsic Recombinations in Gallium Selenide. Phys. Rev. B Condens. Matter. 1989, 40, 3182–3190. 10.1103/physrevb.40.3182
  • Yan, F.; Zhao, L.; Patanè, A.; Hu, P.; Wei, X.; Luo, W.; Zhang, D.; Lv, Q.; Feng, Q.; Shen, C.; et al. Fast, Multicolor Photodetection with Graphene-Contacted p-GaSe/n-InSe Van Der Waals Heterostructures. Nanotechnology 2017, 28, 27LT01. 10.1088/1361–6528/aa749e
  • Hu, P.; Wen, Z.; Wang, L.; Tan, P.; Xiao, K. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors. ACS Nano. 2012, 6, 5988–5994. 10.1021/nn300889c
  • Tan, H.; Fan, Y.; Zhou, Y.; Chen, Q.; Xu, W.; Warner, J. H. Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 with Graphene Electrodes. ACS Nano. 2016, 10, 7866–7873. 10.1021/acsnano.6b03722
  • Kuc, A.; Zibouche, N.; Heine, T. Influence of Quantum Confinement on the Electronic Structure of the Transition Metal Sulfide T S 2. Phys. Rev. B 2011, 83, 245213. 10.1103/PhysRevB.83.245213
  • Shelke, N. T.; Karche, B. Hydrothermal Synthesis of WS2/RGO Sheet and Their Application in UV Photodetector. J. Alloys Compd. 2015, 653, 298–303. 10.1016/j.jallcom.2015.08.255
  • Xue, Y.; Zhang, Y.; Liu, Y.; Liu, H.; Song, J.; Sophia, J.; Liu, J.; Xu, Z.; Xu, Q.; Wang, Z.; et al. Scalable Production of a Few-Layer MoS2/WS2 Vertical Heterojunction Array and Its Application for Photodetectors. ACS Nano. 2016, 10, 573–580. 10.1021/acsnano.5b05596
  • Deng, Y.; Luo, Z.; Conrad, N. J.; Liu, H.; Gong, Y.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Xu, X.; Ye, P. D. Black Phosphorus–Monolayer MoS2 Van Der Waals Heterojunction p–n Diode. ACS Nano. 2014, 8, 8292–8299. 10.1021/nn5027388
  • Ye, L.; Li, H.; Chen, Z.; Xu, J. Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction. ACS Photon. 2016, 3, 692–699. 10.1021/acsphotonics.6b00079
  • Lin, Y.-C.; Komsa, H.-P.; Yeh, C.-H.; Björkman, T.; Liang, Z.-Y.; Ho, C.-H.; Huang, Y.-S.; Chiu, P.-W.; Krasheninnikov, A. V.; Suenaga, K. Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable in-Plane Anisotropy. ACS Nano. 2015, 9, 11249–11257. 10.1021/acsnano.5b04851
  • Zhang, E.; Jin, Y.; Yuan, X.; Wang, W.; Zhang, C.; Tang, L.; Liu, S.; Zhou, P.; Hu, W.; Xiu, F. ReS2‐Based Field‐Effect Transistors and Photodetectors. Adv. Funct. Mater. 2015, 25, 4076–4082. 10.1002/adfm.201500969
  • Liu, F.; Zheng, S.; He, X.; Chaturvedi, A.; He, J.; Chow, W. L.; Mion, T. R.; Wang, X.; Zhou, J.; Fu, Q.; et al. Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2. Adv. Funct. Mater. 2016, 26, 1169–1177. 10.1002/adfm.201504546
  • Kang, B.; Kim, Y.; Yoo, W. J.; Lee, C. Ultrahigh Photoresponsive Device Based on ReS2/Graphene Heterostructure. Small 2018, 14, e1802593. 10.1002/smll.201802593
  • Cai, S.-L.; He, Z.-H.; Li, X.-L.; Zhang, K.; Zheng, S.-R.; Fan, J.; Liu, Y.; Zhang, W.-G. An Unprecedented 2D Covalent Organic Framework with an Htb Net Topology. Chem. Commun. (Camb) 2019, 55, 13454–13457. 10.1039/c9cc06780a
  • Liang, R.-R.; Xu, S.-Q.; Zhang, L.; A, R.-H.; Chen, P.; Cui, F.-Z.; Qi, Q.-Y.; Sun, J.; Zhao, X. Rational Design of Crystalline Two-Dimensional Frameworks with Highly Complicated Topological Structures. Nat. Commun. 2019, 10, 4609. 10.1038/s41467–019–12596–6
  • Diercks, C. S.; Yaghi, O. M. The Atom, the Molecule, and the Covalent Organic Framework. Science 2017, 355, eaal1585. 10.1126/science.aal1585
  • Bessinger, D.; Ascherl, L.; Auras, F.; Bein, T. Spectrally Switchable Photodetection with near-Infrared-Absorbing Covalent Organic Frameworks. J. Am. Chem. Soc. 2017, 139, 12035–12042. 10.1021/jacs.7b06599
  • Jin, S.; Supur, M.; Addicoat, M.; Furukawa, K.; Chen, L.; Nakamura, T.; Fukuzumi, S.; Irle, S.; Jiang, D. Creation of Superheterojunction Polymers via Direct Polycondensation: Segregated and Bicontinuous Donor–Acceptor π-Columnar Arrays in Covalent Organic Frameworks for Long-Lived Charge Separation. J. Am. Chem. Soc. 2015, 137, 7817–7827. 10.1021/jacs.5b03553
  • Medina, D. D.; Sick, T.; Bein, T. Photoactive and Conducting Covalent Organic Frameworks. Adv. Energy Mater. 2017, 7, 1700387. 10.1002/aenm.201700387
  • Xiong, Y.; Liao, Q.; Huang, Z.; Huang, X.; Ke, C.; Zhu, H.; Dong, C.; Wang, H.; Xi, K.; Zhan, P.; et al. Ultrahigh Responsivity Photodetectors of 2D Covalent Organic Frameworks Integrated on Graphene. Adv. Mater. 2020, 32, e1907242. 10.1002/adma.201907242
  • Kumar, M.; Patel, M.; Kim, J.; Lim, D. Enhanced Broadband Photoresponse of a Self-Powered Photodetector Based on Vertically Grown SnS Layers via the Pyro-Phototronic Effect. Nanoscale 2017, 9, 19201–19208. 10.1039/c7nr07120e
  • Wang, Y.; Zhu, Y.; Gu, H.; Wang, X. Enhanced Performances of n-ZnO Nanowires/p-Si Heterojunctioned Pyroelectric near–Infrared Photodetectors via the Plasmonic Effect. ACS Appl. Mater. Interfaces. 2021, 13, 57750–57758. 10.1021/acsami.1c14319
  • Wang, Z.; Yu, R.; Wang, X.; Wu, W.; Wang, Z. L. Ultrafast Response p‐Si/n‐ZnO Heterojunction Ultraviolet Detector Based on Pyro‐Phototronic Effect. Adv. Mater. 2016, 28, 6880–6886. 10.1002/adma.201600884
  • Podder, S.; Basumatary, B.; Gogoi, D.; Bora, J.; Pal, A. R. Pyro-Phototronic Application in the Au/ZnO Interface for the Fabrication of a Highly Responsive Ultrafast UV Photodetector. Appl. Surf. Sci. 2021, 537, 147893. 10.1016/j.apsusc.2020.147893
  • Zhu, Y.; Wang, B.; Deng, C.; Wang, Y.; Wang, X. Photothermal-Pyroelectric-Plasmonic Coupling for High Performance and Tunable Band-Selective Photodetector. Nano Energy 2021, 83, 105801. 10.1016/j.nanoen.2021.105801
  • Meng, J.; Li, Q.; Huang, J.; Pan, C.; Li, Z. Self-Powered Photodetector for Ultralow Power Density UV Sensing. Nano Today 2022, 43, 101399. 10.1016/j.nantod.2022.101399
  • Peng, W.; Yu, R.; Wang, X.; Wang, Z.; Zou, H.; He, Y.; Wang, Z. L. Temperature Dependence of Pyro-Phototronic Effect on Self-Powered ZnO/Perovskite Heterostructured Photodetectors. Nano Res. 2016, 9, 3695–3704. 10.1007/s12274–016–1240–5
  • Zheng, W.; Dong, Y.; Li, T.; Chen, J.; Chen, X.; Dai, Y.; He, G. MgO Blocking Layer Induced Highly UV Responsive TiO2 Nanoparticles Based Self-Powered Photodetectors. J. Alloys Compd. 2021, 869, 159299. 10.1016/j.jallcom.2021.159299
  • Zhang, D.-Y.; Ge, C.-W.; Wang, J.-Z.; Zhang, T.-F.; Wu, Y.-C.; Liang, F.-X. Single-Layer graphene-TiO2 Nanotubes Array Heterojunction for Ultraviolet Photodetector Application. Appl. Surf. Sci. 2016, 387, 1162–1168. 10.1016/j.apsusc.2016.07.041
  • Cao, R.; Xu, J.; Shi, S.; Chen, J.; Liu, D.; Bu, Y.; Zhang, X.; Yin, S.; Li, L. High-Performance Self-Powered Ultraviolet Photodetectors Based on Mixed-Dimensional Heterostructure Arrays Formed from NiO Nanosheets and TiO 2 Nanorods. J. Mater. Chem. C 2020, 8, 9646–9654. 10.1039/D0TC01956A
  • Li, L.; Zhang, F.; Wang, J.; An, Q.; Sun, Q.; Wang, W.; Zhang, J.; Teng, F. Achieving EQE of 16,700% in P3HT: PC71BM Based Photodetectors by Trap-Assisted Photomultiplication. Sci. Rep. 2015, 5, 9181. 10.1038/srep09181
  • Reddy, B. K. S.; Veeralingam, S.; Borse, P. H.; Badhulika, S. A Flexible, Rapid Response, Hybrid Inorganic–Organic SnSe2–PEDOT: PSS Bulk Heterojunction Based High-Performance Broadband Photodetector. Mater. Chem. Front. 2022, 6, 341–351. 10.1039/D1QM01232K
  • Sun, Y.; Song, W.; Gao, F.; Wang, X.; Luo, X.; Guo, J.; Zhang, B.; Shi, J.; Cheng, C.; Liu, Q.; Li, S. In Situ Conformal Coating of Polyaniline on Gan Microwires for Ultrafast, Self-Driven Heterojunction Ultraviolet Photodetectors. ACS Appl. Mater. Interfaces. 2020, 12, 13473–13480. 10.1021/acsami.9b21796
  • Teng, F.; Hu, K.; Ouyang, W.; Fang, X. Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials. Adv. Mater. 2018, 30, e1706262. 10.1002/adma.201706262
  • Zhang, H.; Abdiryim, T.; Jamal, R.; Li, J.; Liu, H.; Kadir, A.; Zou, D.; Che, Y.; Serkjan, N. Self-Powered TiO2 NRs UV Photodetectors: Heterojunction with PTTh and Enhanced Responsivity by Au Nanoparticles. J. Alloys Compd. 2022, 899, 163279. 10.1016/j.jallcom.2021.163279
  • Kumar, M.; Park, J.-Y.; Seo, H. High-Performance and Self-Powered Alternating Current Ultraviolet Photodetector for Digital Communication. ACS Appl. Mater. Interfaces. 2021, 13, 12241–12249. 10.1021/acsami.1c00698
  • Ouyang, B.; He, W.; Wu, L.; Zhao, L.-D.; Yang, Y. Thermo-Phototronic Effect in p-Type Na-Doped SnS Single Crystals for Enhanced Self-Powered Photodetectors. Nano Energy 2021, 88, 106268. 10.1016/j.nanoen.2021.106268
  • Chen, J.; Xu, J.; Shi, S.; Cao, R.; Liu, D.; Bu, Y.; Yang, P.; Xu, J.; Zhang, X.; Li, L. Novel Self-Powered Photodetector with Binary Photoswitching Based on SnSx/TiO2 Heterojunctions. ACS Appl. Mater. Interfaces. 2020, 12, 23145–23154. 10.1021/acsami.0c05247
  • Huang, J.; Li, Q.; Lu, X.; Meng, J.; Li, Z. LSPR‐Enhanced Pyro‐Phototronic Effect for UV Detection with an Ag–ZnO Schottky Junction Device. Adv. Mater. Interfaces 2022, 9, 2200327.
  • Hsiao, C.-C.; Huang, S.-W.; Chang, R.-C. Temperature Field Analysis for ZnO Thin-Film Pyroelectric Devices with Partially Covered Electrode. Sens. Mater. 2012, 24, 421–441. 10.18494/SAM.2012.782
  • Hsiao, C.-C.; Yu, S.-Y. Improved Response of ZnO Films for Pyroelectric Devices. Sensors (Basel) 2012, 12, 17007–17022. 10.3390/s121217007
  • Lee, Y.; Kwon, J.; Hwang, E.; Ra, C. H.; Yoo, W. J.; Ahn, J. H.; Park, J. H.; Cho, J. H. High‐Performance Perovskite–Graphene Hybrid Photodetector. Adv. Mater. 2015, 27, 41–46. 10.1002/adma.201402271
  • Mei, A.; Li, X.; Liu, L.; Ku, Z.; Liu, T.; Rong, Y.; Xu, M.; Hu, M.; Chen, J.; Yang, Y.; et al. A Hole-Conductor–Free, Fully Printable Mesoscopic Perovskite Solar Cell with High Stability. Science 2014, 345, 295–298. 10.1126/science.1254763
  • Malinkiewicz, O.; Yella, A.; Lee, Y. H.; Espallargas, G. M.; Graetzel, M.; Nazeeruddin, M. K.; Bolink, H. J. Perovskite Solar Cells Employing Organic Charge-Transport Layers. Nat. Photon. 2014, 8, 128–132. 10.1038/nphoton.2013.341
  • Liu, Y.; Wang, F.; Wang, X.; Wang, X.; Flahaut, E.; Liu, X.; Li, Y.; Wang, X.; Xu, Y.; Shi, Y.; Zhang, R. Planar Carbon Nanotube–Graphene Hybrid Films for High-Performance Broadband Photodetectors. Nat. Commun. 2015, 6, 8589. 10.1038/ncomms9589
  • Cao, J.; Zou, Y.; Gong, X.; Gou, P.; Qian, J.; Qian, R.; An, Z. Double-Layer Heterostructure of Graphene/Carbon Nanotube Films for Highly Efficient Broadband Photodetector. Appl. Phys. Lett. 2018, 113, 061112.
  • Mauser, K. W.; Kim, S.; Mitrovic, S.; Fleischman, D.; Pala, R.; Schwab, K.; Atwater, H. A. Resonant Thermoelectric Nanophotonics. Nat. Nanotechnol. 2017, 12, 770–775. 10.1038/nnano.2017.87
  • Yoo, T. J.; Kim, W. S.; Chang, K. E.; Kim, C.; Kwon, M. G.; Jo, J. Y.; Lee, B. H. High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires. Nanomaterials 2021, 11, 755. 10.3390/nano11030755
  • Dai, M.; Wang, C.; Ye, M.; Zhu, S.; Han, S.; Sun, F.; Chen, W.; Jin, Y.; Chua, Y.; Wang, Q. J. High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric Van Der Waals Contacts. ACS Nano. 2022, 16, 295–305. 10.1021/acsnano.1c06286
  • Liu, W.; Wang, W.; Guan, Z.; Xu, H. A Plasmon Modulated Photothermoelectric Photodetector in Silicon Nanostripes. Nanoscale 2019, 11, 4918–4924. 10.1039/c8nr10222h
  • Long, M.; Wang, Y.; Wang, P.; Zhou, X.; Xia, H.; Luo, C.; Huang, S.; Zhang, G.; Yan, H.; Fan, Z.; et al. Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability. ACS Nano. 2019, 13, 2511–2519. 10.1021/acsnano.8b09476
  • Sun, M.; Chou, J.-P.; Shi, L.; Gao, J.; Hu, A.; Tang, W.; Zhang, G. Few-Layer PdSe2 Sheets: Promising Thermoelectric Materials Driven by High Valley Convergence. ACS Omega. 2018, 3, 5971–5979. 10.1021/acsomega.8b00485
  • Liang, Q.; Wang, Q.; Zhang, Q.; Wei, J.; Lim, S. X.; Zhu, R.; Hu, J.; Wei, W.; Lee, C.; Sow, C. High‐Performance, Room Temperature, Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe2. Adv. Mater. 2019, 31, 1807609.
  • Du, K-z.; Wang, X-z.; Liu, Y.; Hu, P.; Utama, M. I. B.; Gan, C. K.; Xiong, Q.; Kloc, C. Weak Van Der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides. ACS Nano. 2016, 10, 1738–1743. 10.1021/acsnano.5b05927
  • Grasso, V.; Silipigni, L. Low-Dimensional Materials: The MPX3 Family, Physical Features and Potential Future Applications. Riv. Nuovo Cim. 2002, 25, 1–102. 10.1007/BF03548909
  • Aruchamy, A.; Berger, H.; Levy, F. Photoelectronic Properties of the p-Type Layered Trichalcogenophosphates FePS3 and FePSe3. J. Solid State Chem. 1988, 72, 316–323. 10.1016/0022–4596(88)90035–7
  • Xu, T.; Luo, M.; Shen, N.; Yu, Y.; Wang, Z.; Cui, Z.; Qin, J.; Liang, F.; Chen, Y.; Zhou, Y. Ternary 2D Layered Material FePSe3 and near‐Infrared Photodetector. Adv. Electron. Mater. 2021, 7, 2100207.
  • Long, M.; Shen, Z.; Wang, R.; Dong, Q.; Liu, Z.; Hu, X.; Hou, J.; Lu, Y.; Wang, F.; Zhao, D. Ultrasensitive Solar‐Blind Ultraviolet Photodetector Based on FePSe3/MoS2 Heterostructure Response to 10.6 µm. Adv. Funct. Mater. 2022, 32, 2204230.
  • Yang, Y.; Jeon, J.; Park, J.-H.; Jeong, M. S.; Lee, B. H.; Hwang, E.; Lee, S. Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors. ACS Nano. 2019, 13, 8804–8810. 10.1021/acsnano.9b01941
  • Naguib, M.; Mochalin, V. N.; Barsoum, M. W.; Gogotsi, Y. 25th Anniversary Article: MXenes: A New Family of Two‐Dimensional Materials. Adv. Mater. 2014, 26, 992–1005. 10.1002/adma.201304138
  • Luo, W.; Cao, Y.; Hu, P.; Cai, K.; Feng, Q.; Yan, F.; Yan, T.; Zhang, X.; Wang, K. Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes. Adv. Opt. Mater. 2015, 3, 1418–1423. 10.1002/adom.201500190
  • Gao, S.; Wang, Z.; Wang, H.; Meng, F.; Wang, P.; Chen, S.; Zeng, Y.; Zhao, J.; Hu, H.; Cao, R. Graphene/MoS2/Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance. Adv. Mater. Interfaces 2021, 8, 2001730.
  • Kallatt, S.; Nair, S.; Majumdar, K. Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity. Small 2018, 14, 1702066. 10.1002/smll.201702066
  • Sun, F.; Hong, W.; He, X.; Jian, C.; Ju, Q.; Cai, Q.; Liu, W. Synthesis of Ultrathin Topological Insulator β‐Ag2Te and Ag2Te/WSe2‐Based High‐Performance Photodetector. Small 2022, 19, e2205353. 10.1002/smll.202205353
  • Lee, S.; In, J.; Yoo, Y.; Jo, Y.; Park, Y. C.; Kim, H-j.; Koo, H. C.; Kim, J.; Kim, B.; Wang, K. L. Single Crystalline β-Ag2Te Nanowire as a New Topological Insulator. Nano Lett. 2012, 12, 4194–4199. 10.1021/nl301763r
  • Leng, P.; Chen, F.; Cao, X.; Wang, Y.; Huang, C.; Sun, X.; Yang, Y.; Zhou, J.; Xie, X.; Li, Z.; et al. Gate-Tunable Surface States in Topological Insulator β-Ag2Te with High Mobility. Nano Lett. 2020, 20, 7004–7010. 10.1021/acs.nanolett.0c01676
  • Zhong, B.; Wang, X.; Bi, Y.; Kang, W.; Zhang, L. Simple Synthesis of Crooked Ag2Te Nanotubes and Their Photoelectrical Properties. New J. Chem. 2021, 45, 6100–6107. 10.1039/D1NJ00687H
  • Liu, Y.-W.; Ko, D.-K.; Oh, S. J.; Gordon, T. R.; Doan-Nguyen, V.; Paik, T.; Kang, Y.; Ye, X.; Jin, L.; Kagan, C. R.; Murray, C. B. Near-Infrared Absorption of Monodisperse Silver Telluride (Ag2Te) Nanocrystals and Photoconductive Response of Their Self-Assembled Superlattices. Chem. Mater. 2011, 23, 4657–4659. 10.1021/cm2019795
  • Zhou, C.; Raju, S.; Li, B.; Chan, M.; Chai, Y.; Yang, C. Y. Self‐Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact Geometries. Adv. Funct. Mater. 2018, 28, 1802954.
  • Luo, M.; Wu, F.; Long, M.; Chen, X. WSe2/Au Vertical Schottky Junction Photodetector with Low Dark Current and Fast Photoresponse. Nanotechnology 2018, 29, 444001. 10.1088/1361–6528/aada68
  • Gogoi, D.; Podder, S.; Bora, J.; Biswasi, S.; Pal, A. R. A Hybrid System for Plasmonic and Surface Polarization Induced Pyro-Phototronic Harvesting of Light. Opt. Mater. 2021, 122, 111733. 10.1016/j.optmat.2021.111733
  • Li, Y.; Zhang, Y.; Wu, B.; Pang, S.; Yuan, X.; Duan, C.; Huang, F.; Cao, Y. High‐Efficiency P3HT‐Based All‐Polymer Solar Cells with a Thermodynamically Miscible Polymer Acceptor. Solar RRL 2022, 6, 2200073. 10.1002/solr.202200073
  • Nandihalli, N. Thermoelectric Films and Periodic Structures and Spin Seebeck Effect Systems: Facets of Performance Optimization. Mater. Today Energy 2022, 25, 100965. 10.1016/j.mtener.2022.100965
  • Peng, W.; Wang, X.; Yu, R.; Dai, Y.; Zou, H.; Wang, A. C.; He, Y.; Wang, Z. L. Enhanced Performance of a Self‐Powered Organic/Inorganic Photodetector by Pyro‐Phototronic and Piezo‐Phototronic Effects. Adv. Mater. 2017, 29, 1606698. 10.1002/adma.201606698
  • Wu, Z.; Yao, W.; London, A. E.; Azoulay, J. D.; Ng, T. N. Temperature-Dependent Detectivity of near-Infrared Organic Bulk Heterojunction Photodiodes. ACS Appl. Mater. Interfaces. 2017, 9, 1654–1660. 10.1021/acsami.6b12162
  • Xiang, H.; Hu, Z.; Billot, L.; Aigouy, L.; Zhang, W.; McCulloch, I.; Chen, Z. Heavy-Metal-Free Flexible Hybrid Polymer-Nanocrystal Photodetectors Sensitive to 1.5 μm Wavelength. ACS Appl. Mater. Interfaces. 2019, 11, 42571–42579. 10.1021/acsami.9b14034
  • Kim, J. H.; Liess, A.; Stolte, M.; Krause, A. M.; Stepanenko, V.; Zhong, C.; Bialas, D.; Spano, F.; Würthner, F. An Efficient Narrowband near‐Infrared at 1040 nm Organic Photodetector Realized by Intermolecular Charge Transfer Mediated Coupling Based on a Squaraine Dye. Adv. Mater. 2021, 33, e2100582. 10.1002/adma.202100582
  • Tang, Q.; Zhou, Z.; Chen, Z. Innovation and Discovery of Graphene‐like Materials via Density‐Functional Theory Computations. WIREs Comput. Mol. Sci. 2015, 5, 360–379. 10.1002/wcms.1224
  • Heyd, J.; Scuseria, G. E.; Ernzerhof, M. Hybrid Functionals Based on a Screened Coulomb Potential. J. Chem. Phys. 2003, 118, 8207–8215. 10.1063/1.1564060
  • Strinati, G. Effects of Dynamical Screening on Resonances at Inner-Shell Thresholds in Semiconductors. Phys. Rev. B 1984, 29, 5718–5726. 10.1103/PhysRevB.29.5718
  • Liu, Y.; Duan, X.; Shin, H.-J.; Park, S.; Huang, Y.; Duan, X. Promises and Prospects of Two-Dimensional Transistors. Nature 2021, 591, 43–53. 10.1038/s41586–021–03339-z
  • Li, P.; Guo, H.; Duan, R.; Ru, G.; Qi, W. Excellent Optoelectronic Properties and Low Contact Resistance of Graphene/MoS2 Heterostructure Optoelectronic Devices: First-Principles Calculation and Experimental Verification. ACS Appl. Electron. Mater. 2023, 5, 1676–1687. 10.1021/acsaelm.2c01726
  • Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple. Phys. Rev. Lett. 1996, 77, 3865–3868. 10.1103/PhysRevLett.77.3865
  • Kresse, G.; Furthmüller, J. Efficiency of ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set. Comput. Mater. Sci. 1996, 6, 15–50. 10.1016/0927–0256(96)00008–0
  • Lee, C. H.; Park, Y.; Youn, S.; Yeom, M. J.; Kum, H. S.; Chang, J.; Heo, J.; Yoo, G. Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors. Adv. Funct. Mater. 2022, 32, 2107992.
  • Shu, H. Structural Stability, Tunable Electronic and Optical Properties of Two-Dimensional WS2 and GaN Heterostructure: First-Principles Calculations. Mater. Sci. Eng. B 2020, 261, 114672. 10.1016/j.mseb.2020.114672
  • Gong, C.; Zhang, H.; Wang, W.; Colombo, L.; Wallace, R. M.; Cho, K. Band Alignment of Two-Dimensional Transition Metal Dichalcogenides: Application in Tunnel Field Effect Transistors. Appl. Phys. Lett. 2013, 103, 053513.
  • Yu, P.; Yu, X.; Lu, W.; Lin, H.; Sun, L.; Du, K.; Liu, F.; Fu, W.; Zeng, Q.; Shen, Z.; et al. Fast Photoresponse from 1T Tin Diselenide Atomic Layers. Adv. Funct. Mater. 2016, 26, 137–145. 10.1002/adfm.201503789
  • Kumar, A.; Banyai, D.; Ahluwalia, P.; Pandey, R.; Karna, S. P. Electronic Stability and Electron Transport Properties of Atomic Wires Anchored on the MoS 2 Monolayer. Phys. Chem. Chem. Phys. 2014, 16, 20157–20163. 10.1039/c4cp02128b
  • Kaur, S.; Kumar, A.; Srivastava, S.; Tankeshwar, K. Van Der Waals Heterostructures Based on Allotropes of Phosphorene and MoSe 2. Phys. Chem. Chem. Phys. 2017, 19, 22023–22032. 10.1039/c7cp03960c
  • Dai, X.; Wu, J.; Qian, Z.; Wang, H.; Jian, J.; Cao, Y.; Rummeli, M. H.; Yi, Q.; Liu, H.; Zou, G. Ultra-Smooth Glassy Graphene Thin Films for Flexible Transparent Circuits. Sci. Adv. 2016, 2, e1601574. 10.1126/sciadv.1601574
  • Xu, H.; Han, X.; Dai, X.; Liu, W.; Wu, J.; Zhu, J.; Kim, D.; Zou, G.; Sablon, K. A.; Sergeev, A. High Detectivity and Transparent Few‐Layer MoS2/Glassy‐Graphene Heterostructure Photodetectors. Adv. Mater. 2018, 30, 1706561.
  • Suzuki, Y.; Watanabe, K. Excitons in Two-Dimensional Atomic Layer Materials from Time-Dependent Density Functional Theory: Mono-Layer and bi-Layer Hexagonal Boron Nitride and Transition-Metal Dichalcogenides. Phys. Chem. Chem. Phys. 2020, 22, 2908–2916. 10.1039/c9cp06034k
  • Jamdagni, P.; Thakur, A.; Kumar, A.; Ahluwalia, P.; Pandey, R. Superior Mechanical and Electronic Properties of Novel 2D Allotropes of as and Sb Monolayers. J. Phys. Chem. C 2019, 123, 27214–27221. 10.1021/acs.jpcc.9b07348
  • Ketolainen, T.; Macháčová, N.; Karlický, F. Optical Gaps and Excitonic Properties of 2D Materials by Hybrid Time-Dependent Density Functional Theory: Evidences for Monolayers and Prospects for Van Der Waals Heterostructures. J. Chem. Theory Comput. 2020, 16, 5876–5883. 10.1021/acs.jctc.0c00387
  • Kumar, A.; Sachdeva, G.; Pandey, R.; Karna, S. P. Optical Absorbance in Multilayer Two-Dimensional Materials: Graphene and Antimonene. Appl. Phys. Lett. 2020, 116, 263102.
  • Jia, Y.; Wei, X.; Zhang, Z.; Liu, J.; Tian, Y.; Zhang, Y.; Guo, T.; Fan, J.; Ni, L.; Luan, L.; Duan, L. A Theoretical Design of Photodetectors Based on Two-Dimensional Sb/AlAs type-II Heterostructures. Cryst. Eng. Comm. 2021, 23, 1033–1042. 10.1039/D0CE01633K
  • Salpeter, E. E.; Bethe, H. A. A Relativistic Equation for Bound-State Problems. Phys. Rev. 1951, 84, 1232–1242. 10.1103/PhysRev.84.1232
  • Kolos, M.; Karlický, F. Accurate Many-Body Calculation of Electronic and Optical Band Gap of Bulk Hexagonal Boron Nitride. Phys. Chem. Chem. Phys. 2019, 21, 3999–4005. 10.1039/c8cp07328g
  • Krukau, A. V.; Vydrov, O. A.; Izmaylov, A. F.; Scuseria, G. E. Influence of the Exchange Screening Parameter on the Performance of Screened Hybrid Functionals. J. Chem. Phys. 2006, 125, 224106. 10.1063/1.2404663
  • Kou, L.; Ma, Y.; Tan, X.; Frauenheim, T.; Du, A.; Smith, S. Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide. J. Phys. Chem. C 2015, 119, 6918–6922. 10.1021/acs.jpcc.5b02096
  • Wang, G.; Pandey, R.; Karna, S. P. Atomically Thin Group V Elemental Films: Theoretical Investigations of Antimonene Allotropes. ACS Appl. Mater. Interfaces. 2015, 7, 11490–11496. 10.1021/acsami.5b02441
  • Soulard, C.; Rocquefelte, X.; Petit, P.-E.; Evain, M.; Jobic, S.; Itié, J.-P.; Munsch, P.; Koo, H.-J.; Whangbo, M.-H. Experimental and Theoretical Investigation on the Relative Stability of the PdS2-and Pyrite-Type Structures of PdSe2. Inorg. Chem. 2004, 43, 1943–1949. 10.1021/ic0352396
  • Kuklin, A. V.; Ågren, H. Quasiparticle Electronic Structure and Optical Spectra of Single-Layer and Bilayer PdSe 2: Proximity and Defect-Induced Band Gap Renormalization. Phys. Rev. B 2019, 99, 245114. 10.1103/PhysRevB.99.245114
  • Liu, X.; Zhou, H.; Yang, B.; Qu, Y.; Zhao, M. Strain-Modulated Electronic Structure and Infrared Light Adsorption in Palladium Diselenide Monolayer. Sci. Rep. 2017, 7, 39995. 10.1038/srep39995
  • Jakhar, M.; Singh, J.; Kumar, A.; Pandey, R. First-Principles Study of the Hexagonal T-Phase PdSe2 Monolayer and Its Application in Solar Cells. J. Phys. Chem. C 2020, 124, 26565–26571. 10.1021/acs.jpcc.0c05632
  • Jamdagni, P.; Thakur, A.; Kumar, A.; Ahluwalia, P.; Pandey, R. Two Dimensional Allotropes of Arsenene with a Wide Range of High and Anisotropic Carrier Mobility. Phys. Chem. Chem. Phys. 2018, 20, 29939–29950. 10.1039/c8cp06162a
  • Sun, M.; Re Fiorentin, M.; Schwingenschlögl, U.; Palummo, M. Excitons and Light-Emission in Semiconducting MoSi2X4 Two-Dimensional Materials. Npj 2D Mater. Appl. 2022, 6, 81.
  • Jamdagni, P.; Kumar, A.; Sharma, M.; Thakur, A.; Ahluwalia, P. Electronic Properties and STM Images of Vacancy Clusters and Chains in Functionalized Silicene and Germanene. Phys. E 2017, 85, 65–73. 10.1016/j.physe.2016.08.015
  • Johari, P.; Shenoy, V. B. Tunable Dielectric Properties of Transition Metal Dichalcogenides. ACS Nano. 2011, 5, 5903–5908. 10.1021/nn201698t
  • Lüder, J.; Puglia, C.; Ottosson, H.; Eriksson, O.; Sanyal, B.; Brena, B. Many-Body Effects and Excitonic Features in 2D Biphenylene Carbon. J. Chem. Phys. 2016, 144, 024702. 10.1063/1.4939273
  • Mohebpour, M. A.; Tagani, M. B. First-Principles Study on the Electronic and Optical Properties of AlSb Monolayer. Sci. Rep. 2023, 13, 9925. 10.1038/s41598–023–37081–5
  • Mustafa, H.; Irfan, M.; Sattar, A.; Amjad, R. J.; Latif, H.; Usman, A.; Ahmad, A.; Qin, S. First Principle Study of Multilayered Graphene/MoS2 Heterostructures for Photodetectors. Mater. Sci. Eng. B 2023, 289, 116205. 10.1016/j.mseb.2022.116205
  • Webber, D. H.; Brutchey, R. L. Alkahest for V2VI3 Chalcogenides: Dissolution of Nine Bulk Semiconductors in a Diamine-Dithiol Solvent Mixture. J. Am. Chem. Soc. 2013, 135, 15722–15725. 10.1021/ja4084336
  • Buckley, J. J.; McCarthy, C. L.; Del Pilar-Albaladejo, J.; Rasul, G.; Brutchey, R. L. Dissolution of Sn, SnO, and SnS in a Thiol–Amine Solvent Mixture: Insights into the Identity of the Molecular Solutes for Solution-Processed SnS. Inorg. Chem. 2016, 55, 3175–3180. 10.1021/acs.inorgchem.6b00243
  • Ma, Y.; Vartak, P. B.; Nagaraj, P.; Wang, R. Y. Thermoelectric Properties of Copper Chalcogenide Alloys Deposited via the Solution-Phase Using a Thiol–Amine Solvent Mixture. RSC Adv. 2016, 6, 99905–99913. 10.1039/C6RA15929J
  • Lin, Z.; He, Q.; Yin, A.; Xu, Y.; Wang, C.; Ding, M.; Cheng, H.-C.; Papandrea, B.; Huang, Y.; Duan, X. Cosolvent Approach for Solution-Processable Electronic Thin Films. ACS Nano. 2015, 9, 4398–4405. 10.1021/acsnano.5b00886
  • Shi, X.-L.; Zou, J.; Chen, Z.-G. Advanced Thermoelectric Design: From Materials and Structures to Devices. Chem. Rev. 2020, 120, 7399–7515. 10.1021/acs.chemrev.0c00026
  • Chen, Z.-G.; Han, G.; Yang, L.; Cheng, L.; Zou, J. Nanostructured Thermoelectric Materials: Current Research and Future Challenge. Progr. Natur. Sci. Mater. Inter. 2012, 22, 535–549. 10.1016/j.pnsc.2012.11.011
  • Vieira, E. M.; Figueira, J.; Pires, A. L.; Grilo, J.; Silva, M. F.; Pereira, A. M.; Goncalves, L. M. Enhanced Thermoelectric Properties of Sb2Te3 and Bi2Te3 Films for Flexible Thermal Sensors. J. Alloys Compd. 2019, 774, 1102–1116. 10.1016/j.jallcom.2018.09.324
  • Shrekenhamer, D.; Xu, W.; Venkatesh, S.; Schurig, D.; Sonkusale, S.; Padilla, W. J. Experimental Realization of a Metamaterial Detector Focal Plane Array. Phys. Rev. Lett. 2012, 109, 177401. 10.1103/PhysRevLett.109.177401
  • Chen, K.; Adato, R.; Altug, H. Dual-Band Perfect Absorber for Multispectral Plasmon-Enhanced Infrared Spectroscopy. ACS Nano. 2012, 6, 7998–8006. 10.1021/nn3026468
  • Lin, K.-T.; Chen, H.-L.; Lai, Y.-S.; Yu, C.-C. Silicon-Based Broadband Antenna for High Responsivity and Polarization-Insensitive Photodetection at Telecommunication Wavelengths. Nat. Commun. 2014, 5, 3288. 10.1038/ncomms4288
  • Casse, B.; Lu, W.; Huang, Y.; Gultepe, E.; Menon, L.; Sridhar, S. Super-Resolution Imaging Using a Three-Dimensional Metamaterials Nanolens. Appl. Phys. Lett. 2010, 96, 023114.
  • Liu, X.; Starr, T.; Starr, A. F.; Padilla, W. J. Infrared Spatial and Frequency Selective Metamaterial with near-Unity Absorbance. Phys. Rev. Lett. 2010, 104, 207403. 10.1103/PhysRevLett.104.207403
  • Landy, N. I.; Sajuyigbe, S.; Mock, J. J.; Smith, D. R.; Padilla, W. J. Perfect Metamaterial Absorber. Phys. Rev. Lett. 2008, 100, 207402. 10.1103/PhysRevLett.100.207402
  • Maier, T.; Brückl, H. Wavelength-Tunable Microbolometers with Metamaterial Absorbers. Opt. Lett. 2009, 34, 3012–3014. 10.1364/OL.34.003012
  • Liu, N.; Mesch, M.; Weiss, T.; Hentschel, M.; Giessen, H. Infrared Perfect Absorber and Its Application as Plasmonic Sensor. Nano Lett. 2010, 10, 2342–2348. 10.1021/nl9041033
  • Hedayati, M. K.; Javaherirahim, M.; Mozooni, B.; Abdelaziz, R.; Tavassolizadeh, A.; Chakravadhanula, V. S. K.; Zaporojtchenko, V.; Strunkus, T.; Faupel, F.; Elbahri, M. Design of a Perfect Black Absorber at Visible Frequencies Using Plasmonic Metamaterials. Adv. Mater. 2011, 23, 5410–5414. 10.1002/adma.201102646
  • Wu, C.; Neuner, B. III, John, J.; Milder, A.; Zollars, B.; Savoy, S.; Shvets, G. Metamaterial-Based Integrated Plasmonic Absorber/Emitter for Solar Thermo-Photovoltaic Systems. J. Opt. 2012, 14, 024005. 10.1088/2040–8978/14/2/024005
  • Chen, H.-T. Interference Theory of Metamaterial Perfect Absorbers. Opt. Express. 2012, 20, 7165–7172. 10.1364/OE.20.007165
  • Alaee, R.; Farhat, M.; Rockstuhl, C.; Lederer, F. A Perfect Absorber Made of a Graphene Micro-Ribbon Metamaterial. Opt. Express. 2012, 20, 28017–28024. 10.1364/OE.20.028017
  • Shrekenhamer, D.; Chen, W.-C.; Padilla, W. J. Liquid Crystal Tunable Metamaterial Absorber. Phys. Rev. Lett. 2013, 110, 177403. 10.1103/PhysRevLett.110.177403
  • Li, W.; Guler, U.; Kinsey, N.; Naik, G. V.; Boltasseva, A.; Guan, J.; Shalaev, V. M.; Kildishev, A. V. Refractory Plasmonics with Titanium Nitride: Broadband Metamaterial Absorber. Adv. Mater. 2014, 26, 7959–7965. 10.1002/adma.201401874
  • Tittl, A.; Michel, A. K. U.; Schäferling, M.; Yin, X.; Gholipour, B.; Cui, L.; Wuttig, M.; Taubner, T.; Neubrech, F.; Giessen, H. A Switchable Mid‐Infrared Plasmonic Perfect Absorber with Multispectral Thermal Imaging Capability. Adv. Mater. 2015, 27, 4597–4603. 10.1002/adma.201502023
  • Liu, X.; Padilla, W. J. Reconfigurable Room Temperature Metamaterial Infrared Emitter. Optica 2017, 4, 430–433. 10.1364/OPTICA.4.000430
  • Zhu, H.; Yi, F.; Cubukcu, E. Plasmonic Metamaterial Absorber for Broadband Manipulation of Mechanical Resonances. Nat. Photon. 2016, 10, 709–714. 10.1038/nphoton.2016.183

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.