Advanced search
Publication Cover
Journal of Information Display Volume 25, 2024 - Issue 1: Nano- and micro-LED technology for flexible device and display applications
Submit an article Journal homepage
1,136
Views
1
CrossRef citations to date
0
Altmetric
2024 Special Issue

III-nitride nanowires for emissive display technology

Veeramuthu Vignesha Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaORCID Iconhttps://orcid.org/0000-0003-2458-7523View further author information
ORCID Icon,
Yuanpeng Wub Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USAView further author information
,
Sung-Un Kima Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaView further author information
,
Jeong-Kyun Oha Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaView further author information
,
Chandran Bagavatha Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaView further author information
,
Dae-Young Uma Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaView further author information
,
Zetian Mib Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USACorrespondence[email protected]
View further author information
&
Yong-Ho Raa Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju, Republic of KoreaCorrespondence[email protected]
View further author information
 show all
Pages 13-59 | Received 31 Jul 2023, Accepted 01 Nov 2023, Published online: 21 Nov 2023

References

  • T. Wu, C.W. Sher, Y. Lin, C.F. Lee, S. Liang, Y. Lu, S.W.H. Chen, W. Guo, H.C. Kuo, and Z. Chen, Appl. Sci. 8, 1557 (2018).
  • J. Day, J. Li, D.Y.C. Lie, C. Bradford, J.Y. Lin, and H.X. Jiang, in Quantum Sens. Nanophotonic Devices IX, edited by M. Razeghi, E. Tournie, and G.J. Brown (2012), p. 82681X.
  • J. El Ryu, S. Park, Y. Park, S.W. Ryu, K. Hwang, and H.W. Jang, Adv. Mater. 2204947 (2023).
  • J.J. Wierer, and N. Tansu, Laser Photonics Rev. 13, 1900141 (2019).
  • S.S. Konoplev, K.A. Bulashevich, and S.Y. Karpov, Phys. Status Solidi. 215, 1700508 (2018).
  • H.W. Choi, C.W. Jeon, M.D. Dawson, P.R. Edwards, R.W. Martin, and S. Tripathy, J. Appl. Phys. 93, 5978 (2003).
  • H. Jiang, and J. Lin, Nat. Electron. 6, 257 (2023).
  • C.W. Tang, and S.A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
  • C. Adachi, Jpn. J. Appl. Phys. 53, 060101 (2014).
  • Y. Matsumoto, and Y. Takaki, J. Soc. Inf. Disp. 25, 515 (2017).
  • D. Nakamura, H. Ikeda, N. Sugisawa, Y. Yanagisawa, S. Eguchi, S. Kawashima, M. Shiokawa, H. Miyake, S. Idojiri, A. Ishii, M. Yokoyama, Y. Hirakata, and S. Yamazaki, J. Soc. Inf. Disp. 23, 464 (2015).
  • T. Tsujimura, OLED Display Fundamentals and Applications (John Wiley & Sons, Inc, Hoboken, New Jersey, 2017).
  • S.-H. Kim, M.-Y. Lee, K. Woo, H. Youn, T.-M. Lee, E.K. Lee, and S. Kwon, Int. J. Precis. Eng. Manuf. 18, 1111 (2017).
  • T.Y. Lee, L.Y. Chen, Y.Y. Lo, S.S. Swayamprabha, A. Kumar, Y.M. Huang, S.C. Chen, H.W. Zan, F.C. Chen, R.H. Horng, and H.C. Kuo, ACS Photonics. 9, 2905 (2022).
  • O. Ambacher, J. Phys. D. Appl. Phys. 31, 2653 (1998).
  • N. Alfaraj, M.M. Muhammed, K.H. Li, B. Janjua, R.A. Aljefri, H. Sun, T.K. Ng, B.S. Ooi, I.S. Roqan, and X. Li, AIP Adv. 7, 125113 (2017).
  • C. Hahn, Z. Zhang, A. Fu, C.H. Wu, Y.J. Hwang, D.J. Gargas, and P. Yang, ACS Nano. 5, 3970 (2011).
  • T. Kuykendall, P. Ulrich, S. Aloni, and P. Yang, Nat. Mater. 6, 951 (2007).
  • S.-U. Kim, J.-K. Oh, D.-Y. Um, B. Chandran, C.-R. Lee, and Y.-H. Ra, IEEE Photonics J. 15, 1 (2023).
  • Y.J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H.J. Chung, C. Sone, Y.J. Park, and G.-C. Yi, Adv. Mater. 23, 3284 (2011).
  • S. Nakamura, Science (80-.). 281, 956 (1998).
  • M.R. Krames, O.B. Shchekin, R. Mueller-Mach, G.O. Mueller, L. Zhou, G. Harbers, and M.G. Craford, IEEE/OSA J. Disp. Technol. 3, 160 (2007).
  • Z. Zhuang, D. Iida, and K. Ohkawa, Jpn. J. Appl. Phys. 61, SA0809 (2022).
  • J. Cui, J. Zhou, and H. Xiao, J. Alloys Compd. 924, 166567 (2022).
  • M.F. Huang, Y.L. Huang, J.Y. Chang, Y.H. Shih, and Y.K. Kuo, Micro Nanostructures. 167, 207202 (2022).
  • S. Cheng, Z. Wu, B. Langelier, X. Kong, T. Coenen, S. Hari, Y. Ra, R.T. Rashid, A. Pofelski, H. Yuan, X. Li, Z. Mi, H. Guo, and G.A. Botton, Adv. Opt. Mater. 8, 2000481 (2020).
  • S. Li, and A. Waag, J. Appl. Phys. 111, 071101 (2012).
  • K.C. Kim, M.C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J.S. Speck, S. Nakamura, and S.P. DenBaars, Phys. Status Solidi - Rapid Res. Lett. 1, 125 (2007).
  • H.-J. Shih, I. Lo, Y.-C. Wang, C.-D. Tsai, Y.-C. Lin, Y.-Y. Lu, and H.-C. Huang, Crystals. 12, 417 (2022).
  • H.P. Maruska, and J.J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).
  • A.D. Bolshakov, V.V. Fedorov, K.Y. Shugurov, A.M. Mozharov, G.A. Sapunov, I.V. Shtrom, M.S. Mukhin, A.V. Uvarov, G.E. Cirlin, and I.S. Mukhin, Nanotechnology 30, 395602 (2019).
  • O. Landré, V. Fellmann, P. Jaffrennou, C. Bougerol, H. Renevier, and B. Daudin, Phys. Status Solidi C. 7, 2246 (2010).
  • K.A. Bertness, A. Roshko, L.M. Mansfield, T.E. Harvey, and N.A. Sanford, J. Cryst. Growth. 300, 94 (2007).
  • X. Liu, Y. Wu, Y. Malhotra, Y. Sun, Y.H. Ra, R. Wang, M. Stevenson, S. Coe-Sullivan, and Z. Mi, J. Soc. Inf. Disp. 28, 410 (2020).
  • J. Kamimura, P. Bogdanoff, M. Ramsteiner, P. Corfdir, F. Feix, L. Geelhaar, and H. Riechert, Nano Lett. 17, 1529 (2017).
  • J. Chai, Q. Liu, L. Chen, B. Cao, D. Kong, T. Lin, W. Wang, and G. Li, Adv. Electron. Mater. 9, 2201193 (2023).
  • Y. Wu, B. Liu, Z. Li, T. Tao, Z. Xie, K. Wang, X. Xiu, D. Chen, H. Lu, R. Zhang, and Y. Zheng, Phys. Status Solidi Appl. Mater. Sci. 217, 1900729 (2020).
  • T. Tabata, J. Paek, Y. Honda, M. Yamaguchi, and H. Amano, Phys. Status Solidi Curr. Top. Solid State Phys. 9, 646 (2012).
  • S. Zhao, R. Wang, S. Chu, and Z. Mi, IEEE Nanotechnol. Mag. 13 (6, (2019).
  • S.-U. Kim, and Y.-H. Ra, Nanomaterials 11, 9 (2020).
  • Y.H. Ra, and C.R. Lee, Adv. Mater. Technol. 6, 2000885 (2021).
  • C.T. Foxon, S.V. Novikov, J.L. Hall, R.P. Campion, D. Cherns, I. Griffiths, and S. Khongphetsak, J. Cryst. Growth. 311, 3423 (2009).
  • B.G. Hagar, M. Abdelhamid, E.L. Routh, P.C. Colter, and S.M. Bedair, Appl. Phys. Lett. 121, 052104 (2022).
  • A.K. Tan, N.A. Hamzah, M.A. Ahmad, S.S. Ng, and Z. Hassan, Mater. Sci. Semicond. Process. 143, 106545 (2022).
  • M.I. Md Taib, M.A. Ahmad, E.A. Alias, A.I. Alhassan, I.A. Ajia, M.M. Muhammed, I.S. Roqan, S.P. DenBaars, J.S. Speck, S. Nakamura, and N. Zainal, Semicond. Sci. Technol. 38, 035025 (2023).
  • G. Li, P. Wang, X. He, Y. Meng, F. Liang, M. Zhou, and D. Zhao, Mater. Res. Express. 9, 066404 (2022).
  • D. Kim, K.M. Song, U.J. Jung, S. Kim, D.S. Shin, and J. Park, Appl. Sci. 10 (2020).
  • M.A. Johar, H.G. Song, A. Waseem, J.H. Kang, J.S. Ha, Y.H. Cho, and S.W. Ryu, Nanoscale 11, 10932 (2019).
  • Y.H. Ra, R. Navamathavan, J.H. Park, and C.R. Lee, ACS Appl. Mater. Interfaces 5, 2111 (2013).
  • Y.-H. Ra, R. Navamathavan, and C.-R. Lee, CrystEngComm. 14, 8208 (2012).
  • Y. Ra, R. Navamathavan, J. Park, and C. Lee (2013).
  • Z. Wang, S. Zhu, X. Shan, Z. Yuan, X. Cui, and P. Tian, Opt. Lett. 46, 4358 (2021).
  • S. Zhao, H.P.T. Nguyen, M.G. Kibria, and Z. Mi, Prog. Quantum Electron. 44, 14 (2015).
  • R. Raj, V. Vignesh, Y.-H. Ra, R. Nirmala, C.-R. Lee, and R. Navamathavan, J. Photonics Energy 7, 016001 (2017).
  • S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
  • T. Onuma, S. Keller, S.P. DenBaars, J.S. Speck, S. Nakamura, U.K. Mishra, T. Sota, and S.F. Chichibu, Appl. Phys. Lett. 88, 111912 (2006).
  • Y. Xi, J.Q. Xi, T. Gessmann, J.M. Shah, J.K. Kim, E.F. Schubert, A.J. Fischer, M.H. Crawford, K.H.A. Bogart, and A.A. Allerman, Appl. Phys. Lett. 86, 1 (2005).
  • Y. Wu, X. Liu, A. Pandey, P. Zhou, W.J. Dong, P. Wang, J. Min, P. Deotare, M. Kira, E. Kioupakis, and Z. Mi, Prog. Quantum Electron. 85, 100401 (2022).
  • P. Feng, C. Xu, J. Bai, C. Zhu, I. Farrer, G.M. De Arriba, and T. Wang, ACS Appl. Electron. Mater. 4, 2787 (2022).
  • B. Park, J.K. Lee, C.T. Koch, M. Wölz, L. Geelhaar, and S.H. Oh, Adv. Sci. 9, 2200323 (2022).
  • F. Glas, Phys. Rev. B - Condens. Matter Mater. Phys. 74, 121302 (2006).
  • C. Zhao, N. Alfaraj, R. Chandra Subedi, J.W. Liang, A.A. Alatawi, A.A. Alhamoud, M. Ebaid, M.S. Alias, T.K. Ng, and B.S. Ooi, Prog. Quantum Electron. 61, 1 (2018).
  • R.M. Farrell, E.C. Young, F. Wu, S.P. Denbaars, and J.S. Speck, Semicond. Sci. Technol. 27, 024001 (2012).
  • J. Moneta, G. Staszczak, E. Grzanka, P. Tauzowski, P. Dłużewski, and J. Smalc-Koziorowska, J. Appl. Phys. 133, 045304 (2023).
  • C. Li, Y. Piao, B. Meng, Y. Hu, L. Li, and F. Zhang, Int. J. Mach. Tools Manuf. 172, 103827 (2022).
  • C. Haller, J.F. Carlin, G. Jacopin, W. Liu, D. Martin, R. Butté, and N. Grandjean, Appl. Phys. Lett. 113 (2018).
  • F.C.P. Massabuau, S.L. Sahonta, L. Trinh-Xuan, S. Rhode, T.J. Puchtler, M.J. Kappers, C.J. Humphreys, and R.A. Oliver, Appl. Phys. Lett. 101, 212107 (2012).
  • A.E. Romanov, E.C. Young, F. Wu, A. Tyagi, C.S. Gallinat, S. Nakamura, S.P. Denbaars, and J.S. Speck, J. Appl. Phys. 109, 103522 (2011).
  • Y. Jiang, Y. Li, Y. Li, Z. Deng, T. Lu, Z. Ma, P. Zuo, L. Dai, L. Wang, H. Jia, W. Wang, J. Zhou, W. Liu, and H. Chen, Sci. Rep. 5, 10883 (2015).
  • S. Hammersley, M.J. Kappers, F.C.P. Massabuau, S.L. Sahonta, P. Dawson, R.A. Oliver, and C.J. Humphreys, Appl. Phys. Lett. 107 (2015).
  • Z. Lv, H. Wang, and H. Jiang, J. Phys. Chem. C. 125, 16643 (2021).
  • X. Zhao, K. Sun, S. Cui, B. Tang, H. Hu, and S. Zhou, Adv. Photonics Res. (2023).
  • H.S. Wasisto, J.D. Prades, J. Gülink, and A. Waag, Appl. Phys. Rev. 6, 041315 (2019).
  • J.H. Moon, B. Kim, M. Choi, K.Y. Woo, B.S. Kim, S. Ahn, S. Jun, Y.H. Song, and Y.H. Cho, Adv. Mater. 35 (2023).
  • J. Zhang, L.D. Zhang, X.F. Wang, C.H. Liang, X.S. Peng, and Y.W. Wang, J. Chem. Phys. 115, 5714 (2001).
  • R. Wang, H.P.T. Nguyen, A.T. Connie, J. Lee, I. Shih, and Z. Mi, Opt. Express. 22, A1768 (2014).
  • A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, and Z. Mi, Photonics Res. 10, 1107 (2022).
  • Y.H. Ra, R. Wang, S.Y. Woo, M. Djavid, S.M. Sadaf, J. Lee, G.A. Botton, and Z. Mi, Nano Lett. 16, 4608 (2016).
  • C. Mazuir, J. Nanophotonics 1, 013503 (2007).
  • Y.H. Ra, R. Navamathavan, H. Il Yoo, and C.R. Lee, Nano Lett. 14, 1537 (2014).
  • H.P.T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G.A. Botton, and Z. Mi, Nano Lett. 11, 1919 (2011).
  • H. Sun, and X. Li, Phys. Status Solidi Appl. Mater. Sci. 216, 1800420 (2019).
  • A. Waag, X. Wang, S. Fündling, J. Ledig, M. Erenburg, R. Neumann, M. Al Suleiman, S. Merzsch, J. Wei, S. Li, H.H. Wehmann, W. Bergbauer, M. Straßburg, A. Trampert, U. Jahn, and H. Riechert, Phys. Status Solidi Curr. Top. Solid State Phys. 8, 2296 (2011).
  • M. Sheen, Y. Ko, D. Kim, J. Kim, J. Byun, Y. Choi, J. Ha, K.Y. Yeon, D. Kim, J. Jung, J. Choi, R. Kim, J. Yoo, I. Kim, C. Joo, N. Hong, J. Lee, S.H. Jeon, S.H. Oh, J. Lee, N. Ahn, and C. Lee, Nature. 608, 56 (2022).
  • X. Liu, Y. Sun, Y. Malhotra, A. Pandey, P. Wang, Y. Wu, K. Sun, and Z. Mi, Photonics Res. 10, 587 (2022).
  • M.M. Taher, S. Al-yousif, and N.M. Ahmed, Results Phys. 20, 103732 (2021).
  • C. Li, J.B. Wright, S. Liu, P. Lu, J.J. Figiel, B. Leung, W.W. Chow, I. Brener, D.D. Koleske, T.S. Luk, D.F. Feezell, S.R.J. Brueck, and G.T. Wang, Nano Lett. 17, 1049 (2017).
  • D. Kong, Y. Zhou, J. Chai, S. Chen, L. Chen, L. Li, T. Lin, W. Wang, and G. Li, J. Mater. Chem. C. 10, 14080 (2022).
  • J.H. Park, R. Nandi, J.K. Sim, D.Y. Um, S. Kang, J.S. Kim, and C.R. Lee, RSC Adv. 8, 20585 (2018).
  • H.P.T. Nguyen, Y. Li, and Z. Mi, in CLEO Sci. Innov. CLEO_SI 2012 (OSA, Washington, D.C., 2012), p. CF2J.6.
  • R. Cheriton, S.M. Sadaf, L. Robichaud, J.J. Krich, Z. Mi, and K. Hinzer, Commun. Mater. 1, 63 (2020).
  • S. Noh, J. Shin, Y.T. Yu, M.Y. Ryu, and J.S. Kim, Nanomaterials 13, 358 (2023).
  • M.G. Kibria, F.A. Chowdhury, S. Zhao, B. AlOtaibi, M.L. Trudeau, H. Guo, and Z. Mi, Nat. Commun. 6, 6797 (2015).
  • H.J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L.M. Smith, H.E. Jackson, J.M. Yarrison-Rice, P. Parkinson, and M.B. Johnston, Prog. Quantum Electron. 35, 23 (2011).
  • A. Zhang, G. Zheng, and C.M. Lieber, Nanosci. Technol. 15–37 (2016).
  • J. Xiong, E.L. Hsiang, Z. He, T. Zhan, and S.T. Wu, Light Sci. Appl. 10, 216 (2021).
  • Z. Liu, C.H. Lin, B.R. Hyun, C.W. Sher, Z. Lv, B. Luo, F. Jiang, T. Wu, C.H. Ho, H.C. Kuo, and J.H. He, Light Sci. Appl. 9, 83 (2020).
  • D. Hwang, A. Mughal, C.D. Pynn, S. Nakamura, and S.P. DenBaars, Appl. Phys. Express 10, 032101 (2017).
  • J.M. Smith, R. Ley, M.S. Wong, Y.H. Baek, J.H. Kang, C.H. Kim, M.J. Gordon, S. Nakamura, J.S. Speck, and S.P. Denbaars, Appl. Phys. Lett. 116 (2020).
  • W.Y. Fu, and H.W. Choi, Phys. Status Solidi - Rapid Res. Lett. 16, 2100628 (2022).
  • W.Y. Fu, K.K.Y. Wong, and H.W. Choi, Appl. Phys. Lett. 95 (2009).
  • C. Böcklin, R.G. Veprek, S. Steiger, and B. Witzigmann, Phys. Rev. B - Condens. Matter Mater. Phys. 81, 155306 (2010).
  • Y.D. Zhuang, J. Bruckbauer, P.A. Shields, P.R. Edwards, R.W. Martin, and D.W.E. Allsopp, J. Appl. Phys. 116 (2014).
  • C. Feng, J.A. Huang, and H.W. Choi, ACS Photonics. 3, 1294 (2016).
  • W.Y. Fu, and H.W. Choi, Optica. 5, 765 (2018).
  • W.Y. Fu, and H.W. Choi, Appl. Phys. Lett. 118 (2021).
  • V. Ramesh, A. Kikuchi, K. Kishino, M. Funato, and Y. Kawakami, J. Appl. Phys. 107 (2010).
  • R.S. Wagner, and W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
  • Y.B. Tang, X.H. Bo, C.S. Lee, H.T. Cong, H.M. Cheng, Z.H. Chen, W.J. Zhang, I. Bello, and S.T. Lee, Adv. Funct. Mater. 18, 3515 (2008).
  • X. Weng, R.A. Burke, and J.M. Redwing, Nanotechnology 20, 085610 (2009).
  • G. Seryogin, I. Shalish, W. Moberlychan, and V. Narayanamurti, Nanotechnology 16, 2342 (2005).
  • A. Bao, Mater. Sci. Technol. 33, 765 (2017).
  • H.J. Fan, P. Werner, and M. Zacharias, Small 2, 700 (2006).
  • J. Li, C. Lu, B. Maynor, S. Huang, and J. Liu, Chem. Mater. 16, 1633 (2004).
  • F. Qian, Y. Li, S. Gradečak, D. Wang, C.J. Barrelet, and C.M. Lieber, Nano Lett. 4, 1975 (2004).
  • M.A. Sanchez-Garcia, E. Calleja, E. Monroy, F.J. Sanchez, F. Calle, E. Muñoz, and R. Beresford, J. Cryst. Growth 183, 23 (1998).
  • E.S. Jang, Y.H. Ra, Y.M. Lee, S.H. Yun, D.W. Kim, R. Navamathavan, J.S. Kim, I.H. Lee, and C.R. Lee, Jpn. J. Appl. Phys. 48, 0910011 (2009).
  • J. Ristić, E. Calleja, S. Fernández-Garrido, L. Cerutti, A. Trampert, U. Jahn, and K.H. Ploog, J. Cryst. Growth. 310, 4035 (2008).
  • M. Yoshizawa, A. Kikuchi, N. Fujita, K. Kushi, H. Sasamoto, and K. Kishino, J. Cryst. Growth. 189–190, 138 (1998).
  • K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, and A.V. Davydov, J. Cryst. Growth. 287, 522 (2006).
  • O. Landré, C. Bougerol, H. Renevier, and B. Daudin, Nanotechnology 20, 415602 (2009).
  • R. Songmuang, O. Landré, and B. Daudin, Appl. Phys. Lett. 91 (2007).
  • H. Sekiguchi, T. Nakazato, A. Kikuchi, and K. Kishino, J. Cryst. Growth. 300, 259 (2007).
  • V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert, Phys. Rev. B - Condens. Matter Mater. Phys. 81, 085310 (2010).
  • R.K. Debnath, R. Meijers, T. Richter, T. Stoica, R. Calarco, and H. Lüth, Appl. Phys. Lett. 90 (2007).
  • K.A. Bertness, A. Roshko, L.M. Mansfield, T.E. Harvey, and N.A. Sanford, J. Cryst. Growth 310, 3154 (2008).
  • E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, and J.C. Harmand, Nanotechnology 22, 245606 (2011).
  • K. Kishino, H. Sekiguchi, and A. Kikuchi, J. Cryst. Growth 311, 2063 (2009).
  • A. Usui, H. Sunakawa, A. Sakai, and A.A. Yamaguchi, Japanese J. Appl. Physics, Part 2 Lett. 36, L899 (1997).
  • Y.H. Ra, R.T. Rashid, X. Liu, J. Lee, and Z. Mi, Adv. Funct. Mater. 27 (2017).
  • H.Q.T. Bui, R.T. Velpula, B. Jain, O.H. Aref, H.D. Nguyen, T.R. Lenka, and H.P.T. Nguyen, Micromachines 10, 492 (2019).
  • V. Consonni, M. Hanke, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert, Phys. Rev. B - Condens. Matter Mater. Phys. 83, 035310 (2011).
  • B.J. May, A.T.M.G. Sarwar, and R.C. Myers, Appl. Phys. Lett. 108 (2016).
  • C. Zhao, T.K. Ng, N. Wei, A. Prabaswara, M.S. Alias, B. Janjua, C. Shen, and B.S. Ooi, Nano Lett. 16, 1056 (2016).
  • S. Zhao, M.G. Kibria, Q. Wang, H.P.T. Nguyen, and Z. Mi, Nanoscale 5, 5283 (2013).
  • M.R. Philip, D.D. Choudhary, M. Djavid, K.Q. Le, J. Piao, and H.P.T. Nguyen, J. Sci. Adv. Mater. Devices 2, 150 (2017).
  • Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I.M. Watson, E. Gu, and M.D. Dawson, J. Appl. Phys. 107, 013103 (2010).
  • R. Wang, X. Liu, I. Shih, and Z. Mi, Appl. Phys. Lett. 106, 261104 (2015).
  • M.G. Kibria, S. Zhao, F.A. Chowdhury, Q. Wang, H.P.T. Nguyen, M.L. Trudeau, H. Guo, and Z. Mi, Nat. Commun. 5, 3825 (2014).
  • G. Li, Y. Yao, and M. Dagenais, J. Cryst. Growth 524, 125181 (2019).
  • X. Wang, S. Li, M.S. Mohajerani, J. Ledig, H.-H. Wehmann, M. Mandl, M. Strassburg, U. Steegmüller, U. Jahn, J. Lähnemann, H. Riechert, I. Griffiths, D. Cherns, and A. Waag, Cryst. Growth Des. 13, 3475 (2013).
  • Ž Gačević, D. Gómez Sánchez, and E. Calleja, Nano Lett. 15, 1117 (2015).
  • F. Qian, S. Gradečak, Y. Li, C.Y. Wen, and C.M. Lieber, Nano Lett. 5, 2287 (2005).
  • Y.H. Ra, and C.R. Lee, Nano Lett. 20, 4162 (2020).
  • R. Navamathavan, V. Vignesh, R. Nirmala, and R. Raj, Adv. Sci. Eng. Med. 8, 925 (2016).
  • M. Tchernycheva, P. Lavenus, H. Zhang, A.V. Babichev, G. Jacopin, M. Shahmohammadi, F.H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk, Nano Lett. 14, 2456 (2014).
  • O. Hayden, A.B. Greytak, and D.C. Bell, Adv. Mater. 17, 701 (2005).
  • S. Choi, H.G. Song, Y.S. Yoo, C. Lee, K.Y. Woo, E. Lee, S.D. Roh, and Y.H. Cho, ACS Photonics 5, 2825 (2018).
  • S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, and B. Damilano, Appl. Phys. Lett. 103 (2013).
  • U. Kaufmann, P. Schlotter, H. Obloh, K. Köhler, and M. Maier, Phys. Rev. B - Condens. Matter Mater. Phys. 62, 10867 (2000).
  • G. Miceli, and A. Pasquarello, Phys. Rev. B. 93, 165207 (2016).
  • G. Namkoong, W.A. Doolittle, and A.S. Brown, Appl. Phys. Lett. 77, 4386 (2000).
  • S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies, J. Cryst. Growth 269, 249 (2004).
  • J. Piprek, and S. Li, Opt. Quantum Electron. 42, 89 (2010).
  • H.Y. Ryu, J.I. Shim, C.H. Kim, J.H. Choi, H.M. Jung, M.S. Noh, J.M. Lee, and E.S. Nam, IEEE Photonics Technol. Lett. 23, 1866 (2011).
  • J. Cho, E.F. Schubert, and J.K. Kim, Laser Photonics Rev. 7, 408 (2013).
  • F. Furtmayr, M. Vielemeyer, M. Stutzmann, J. Arbiol, S. Estradé, F. Peir, J.R. Morante, and M. Eickhoff, J. Appl. Phys. 104, 034309 (2008).
  • Y.H. Ra, and C.R. Lee, ACS Photonics 6, 2397 (2019).
  • Q. Wang, X. Liu, M.G. Kibria, S. Zhao, H.P.T. Nguyen, K.H. Li, Z. Mi, T. Gonzalez, and M.P. Andrews, Nanoscale 6, 9970 (2014).
  • A. Pandey, Y. Xiao, M. Reddeppa, Y. Malhotra, J. Liu, J. Min, Y. Wu, and Z. Mi, Appl. Phys. Lett. 122, 151103 (2023).
  • B. Liu, T. Hu, Z. Wang, L. Liu, F. Qin, N. Huang, and X. Jiang, Cryst. Res. Technol. 47, 207 (2012).
  • M.A. Reshchikov, and H. Morkoç, J. Appl. Phys. 97, 061301 (2005).
  • C. Kölper, M. Sabathil, F. Römer, M. Mandl, M. Strassburg, and B. Witzigmann, Phys. Status Solidi. 209, 2304 (2012).
  • S. Li, X. Wang, S. Fündling, M. Erenburg, J. Ledig, J. Wei, H.H. Wehmann, A. Waag, W. Bergbauer, M. Mandl, M. Strassburg, A. Trampert, U. Jahn, H. Riechert, H. Jönen, and A. Hangleiter, Appl. Phys. Lett. 101 (2012).
  • J. Bai, Q. Wang, and T. Wang, J. Appl. Phys. 111, 113103 (2012).
  • H. Zhao, G. Liu, X.-H. Li, G.S. Huang, J.D. Poplawsky, S.T. Penn, V. Dierolf, and N. Tansu, Appl. Phys. Lett. 95, 061104 (2009).
  • M.-Y. Ke, C.-Y. Wang, L.-Y. Chen, H.-H. Chen, H.-L. Chiang, Y.-W. Cheng, M.-Y. Hsieh, C.-P. Chen, and J. Huang, IEEE J. Sel. Top. Quantum Electron. 15, 1242 (2009).
  • Y.D. Zhuang, C.J. Lewins, S. Lis, P.A. Shields, and D.W.E. Allsopp, IEEE Photonics Technol. Lett. 25, 1047 (2013).
  • C.-H. Chang, L.-Y. Chen, L.-C. Huang, Y.-T. Wang, T.-C. Lu, and J.J. Huang, IEEE J. Quantum Electron. 48, 551 (2012).
  • L.-Y. Chen, C.-K. Li, J.-Y. Tan, L.-C. Huang, Y.-R. Wu, and J.J. Huang, IEEE J. Quantum Electron. 49, 224 (2013).
  • V. Gottschalch, G. Wagner, J. Bauer, H. Paetzelt, and M. Shirnow, J. Cryst. Growth 310, 5123 (2008).
  • F. Scholz, V. Härle, F. Steuber, H. Bolay, A. Dörnen, B. Kaufmann, V. Syganow, and A. Hangleiter, J. Cryst. Growth 170, 321 (1997).
  • E. Stern, G. Cheng, E. Cimpoiasu, R. Klie, S. Guthrie, J. Klemic, I. Kretzschmar, E. Steinlauf, D. Turner-Evans, E. Broomfield, J. Hyland, R. Koudelka, T. Boone, M. Young, A. Sanders, R. Munden, T. Lee, D. Routenberg, and M.A. Reed, Nanotechnology 16, 2941 (2005).
  • G. Pozina, C.W. Hsu, N. Abrikossova, and C. Hemmingsson, Crystals 13, 373 (2023).
  • L.J. Lauhon, M.S. Gudiksen, and C.M. Lieber, Philos. Trans. R. Soc. London. Ser. A Math. Phys. Eng. Sci. 362, 1247 (2004).
  • A.P. Vajpeyi, A.O. Ajagunna, G. Tsiakatouras, A. Adikimenakis, E. Iliopoulos, K. Tsagaraki, M. Androulidaki, and A. Georgakilas, Microelectron. Eng. 86, 812 (2009).
  • H.-M. Kim, Y.-H. Cho, H. Lee, S. Il Kim, S.R. Ryu, D.Y. Kim, T.W. Kang, and K.S. Chung, Nano Lett. 4, 1059 (2004).
  • A. Tanaka, R. Chen, K.L. Jungjohann, and S.A. Dayeh, Sci. Rep. 5, 17314 (2015).
  • K.S. Qwah, M. Monavarian, W.Y. Ho, Y.-R. Wu, and J.S. Speck, Phys. Rev. Mater. 6, 044602 (2022).
  • W. Guo, M. Zhang, A. Banerjee, and P. Bhattacharya, Nano Lett. 10, 3356 (2010).
  • A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, Japanese J. Appl. Physics, Part 2 Lett. 43, L1524 (2004).
  • W. Guo, A. Banerjee, P. Bhattacharya, and B.S. Ooi, Appl. Phys. Lett. 98, 193102 (2011).
  • R. Armitage, and K. Tsubaki, Nanotechnology 21, 195202 (2010).
  • R. Gujrati, A. Srivastava, P. Vuong, V. Ottapilakkal, Y.N. Sama, T.H. Ngo, T. Moudakir, G. Patriarche, S. Gautier, P.L. Voss, S. Sundaram, J.P. Salvestrini, and A. Ougazzaden, Adv. Mater. Technol. (2023).
  • H.P.T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, and Z. Mi, Nanotechnology 22, 445202 (2011).
  • H. Fu and Y. Zhao, Nitride Semicond. Light. Diodes Mater. Technol. Appl. Second Ed. (Elsevier, 2018), pp. 299–325.
  • J.S. Speck, and S.J. Rosner, Phys. B Condens. Matter. 273–274, 24 (1999).
  • Y. Zhang, M.J. Kappers, D. Zhu, F. Oehler, F. Gao, and C.J. Humphreys, Sol. Energy Mater. Sol. Cells 117, 279 (2013).
  • D. Shi, S. Feng, Y. Qiao, and P. Wen, Solid. State. Electron. 109, 25 (2015).
  • J. Xie, X. Ni, Q. Fan, R. Shimada, Ü Özgür, and H. Morkoç, Appl. Phys. Lett. 93 (2008).
  • X. Ni, Q. Fan, R. Shimada, Ü Özgür, and H. Morkoç, Appl. Phys. Lett. 93, 171113 (2008).
  • M.-H. Kim, M.F. Schubert, Q. Dai, J.K. Kim, E.F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007).
  • Y.C. Shen, G.O. Mueller, S. Watanabe, N.F. Gardner, A. Munkholm, and M.R. Krames, Appl. Phys. Lett. 91, 141101 (2007).
  • J. Iveland, L. Martinelli, J. Peretti, J.S. Speck, and C. Weisbuch, Phys. Rev. Lett. 110, 177406 (2013).
  • C.M. Jones, C.H. Teng, Q. Yan, P.C. Ku, and E. Kioupakis, Appl. Phys. Lett. 111 (2017).
  • A. David, and M.J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010).
  • J. Hader, J. V. Moloney, and S.W. Koch, in Phys. Simul. Optoelectron. Devices XIV, edited by M. Osinski, F. Henneberger, and Y. Arakawa (2006), p. 61151T.
  • V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B. 60, 8849 (1999).
  • S.F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura, Y. Ishida, H. Okumura, H. Nakanishi, T. Sota, and T. Mukai, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 19, 2177 (2001).
  • X. Meng, L. Wang, Z. Hao, Y. Luo, C. Sun, Y. Han, B. Xiong, J. Wang, and H. Li, Appl. Phys. Lett. 108 (2016).
  • H.P.T. Nguyen, M. Djavid, K. Cui, and Z. Mi, Nanotechnology 23, 194012 (2012).
  • G. Kim, J.H. Kim, E.H. Park, D. Kang, and B.-G. Park, Opt. Express 22, 1235 (2014).
  • M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, Appl. Phys. Lett. 95, 201108 (2009).
  • M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, J. Appl. Phys. 106, 114508 (2009).
  • A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, IEEE Trans. Electron Devices 57, 79 (2010).
  • K.W. Williams, N.R. Monahan, D.D. Koleske, M.H. Crawford, and X.Y. Zhu, Appl. Phys. Lett. 108 (2016).
  • K.J. Vampola, N.N. Fellows, H. Masui, S.E. Brinkley, M. Furukawa, R.B. Chung, H. Sato, J. Sonoda, H. Hirasawa, M. Iza, S.P. Denbaars, and S. Nakamura, Phys. Status Solidi Appl. Mater. Sci. 206, 200 (2009).
  • C.C. Pan, S. Tanaka, F. Wu, Y. Zhao, J.S. Speck, S. Nakamura, S.P. Den Baars, and D. Feezel, Appl. Phys. Express 5, 062103 (2012).
  • Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, J. Phys. D. Appl. Phys. 43, 354002 (2010).
  • W. Guo, M. Zhang, P. Bhattacharya, and J. Heo, Nano Lett. 11, 1434 (2011).
  • E. Kioupakis, P. Rinke, K.T. Delaney, and C.G. Van de Walle, Appl. Phys. Lett. 98, 161107 (2011).
  • F. Bertazzi, M. Goano, and E. Bellotti, Appl. Phys. Lett. 97, 231118 (2010).
  • P.T. Barletta, E. Acar Berkman, B.F. Moody, N.A. El-Masry, A.M. Emara, M.J. Reed, and S.M. Bedair, Appl. Phys. Lett. 90, 151109 (2007).
  • J.-I. Shim, H. Kim, D.-P. Han, D.-S. Shin, and K.S. Kim, in Gall. Nitride Mater. Devices IX, edited by J.-I. Chyi, Y. Nanishi, H. Morkoç, J. Piprek, E. Yoon, and H. Fujioka (2014), p. 89861S.
  • Y.-W. Lin, C.-K. Wang, Y.-Z. Chiou, H.-M. Chang, and S.-J. Chang, J. Photonics Energy 5, 057612 (2015).
  • J. Piprek, Phys. Status Solidi. 207, 2217 (2010).
  • K.T. Delaney, P. Rinke, and C.G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009).
  • P.G. Eliseev, M. Osin’ski, H. Li, and I.V. Akimova, Appl. Phys. Lett. 75, 3838 (1999).
  • S.-C. Ling, T.-C. Lu, S.-P. Chang, J.-R. Chen, H.-C. Kuo, and S.-C. Wang, Appl. Phys. Lett. 96, 231101 (2010).
  • E. Matioli, C. Neufeld, M. Iza, S.C. Cruz, A.A. Al-Heji, X. Chen, R.M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, Appl. Phys. Lett. 98 (2011).
  • J.H. Zhu, S.M. Zhang, H. Wang, D.G. Zhao, J.J. Zhu, Z.S. Liu, D.S. Jiang, Y.X. Qiu, and H. Yang, J. Appl. Phys. 109, 093117 (2011).
  • S.-H. Han, C.-Y. Cho, S.-J. Lee, T.-Y. Park, T.-H. Kim, S.H. Park, S. Won Kang, J. Won Kim, Y.C. Kim, and S.-J. Park, Appl. Phys. Lett. 96, 051113 (2010).
  • H.P.T. Nguyen, M. Djavid, S.Y. Woo, X. Liu, A.T. Connie, S. Sadaf, Q. Wang, G.A. Botton, I. Shih, and Z. Mi, Sci. Rep. 5, 7744 (2015).
  • P. Chatzopoulou, I.G. Vasileiadis, P. Komninou, V. Pontikis, T. Karakostas, and G.P. Dimitrakopulos, Crystals 13, 700 (2023).
  • M. Hajdel, M. Chlipała, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-żmuda, C. Skierbiszewski, and G. Muziol, Materials (Basel) 15, 237 (2022).
  • K.J. Vampola, M. Iza, S. Keller, S.P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 94, 061116 (2009).
  • Ü Özgür, X. Ni, X. Li, J. Lee, S. Liu, S. Okur, V. Avrutin, A. Matulionis, and H. Morkoç, Semicond. Sci. Technol. 26, 014022 (2011).
  • X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü Özgür, H. Morkoç, and A. Matulionis, J. Appl. Phys. 108, 033112 (2010).
  • H.P.T. Nguyen, K. Cui, S. Zhang, M. Djavid, A. Korinek, G.A. Botton, and Z. Mi, Nano Lett. 12, 1317 (2012).
  • M. Djavid, H.P.T. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, Semicond. Sci. Technol. 29, 085009 (2014).
  • W. Shockley, and W.T. Read, Phys. Rev. 87, 835 (1952).
  • P.T. Valentim, J.P. Vasco, I.J. Luxmoore, D. Szymanski, H. Vinck-Posada, A.M. Fox, D.M. Whittaker, M.S. Skolnick, and P.S.S. Guimarães, Appl. Phys. Lett. 102 (2013).
  • S.A. Chevtchenko, M.A. Reshchikov, Q. Fan, X. Ni, Y.T. Moon, A.A. Baski, and H. Morkoç, J. Appl. Phys. 101, 113709 (2007).
  • N. Tajik, C.M. Haapamaki, and R.R. Lapierre, Nanotechnology 23, 315703 (2012).
  • M. Musolino, D. Van Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, and H. Riechert, J. Appl. Phys. 119 (2016).
  • H.P.T. Nguyen, S. Zhang, A.T. Connie, M.G. Kibria, Q. Wang, I. Shih, and Z. Mi, Nano Lett. 13, 5437 (2013).
  • K. Ito, W. Lu, S. Katsuro, R. Okuda, N. Nakayama, N. Sone, K. Mizutani, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, Nanoscale Adv. 4, 102 (2022).
  • S. Liu, S. Han, C. Xu, H. Xu, X. Wang, D. Wang, and Y. Zhu, Opt. Mater. (Amst). 121, 111579 (2021).
  • J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, and C. Skierbiszewski, Opt. Express 30, 27004 (2022).
  • Y.H. Ra, R.T. Rashid, X. Liu, S.M. Sadaf, K. Mashooq, and Z. Mi, Sci. Adv. 6, 1 (2020).
  • X. Liu, Y. Sun, Y. Malhotra, A. Pandey, Y. Wu, K. Sun, and Z. Mi, Appl. Phys. Lett. 119 (2021).
  • Y. Wu, P. Wang, W. Lee, A. Aiello, P. Deotare, T. Norris, P. Bhattacharya, M. Kira, E. Kioupakis, and Z. Mi, Appl. Phys. Lett. 122, 160501 (2023).
  • Y. Wu, X. Liu, P. Wang, D.A. Laleyan, K. Sun, Y. Sun, C. Ahn, M. Kira, E. Kioupakis, and Z. Mi, Appl. Phys. Lett. 116 (2020).
  • Y. Wu, Y. Xiao, I. Navid, K. Sun, Y. Malhotra, P. Wang, D. Wang, Y. Xu, A. Pandey, M. Reddeppa, W. Shin, J. Liu, J. Min, and Z. Mi, Light Sci. Appl. 11 (2022).
  • A. Aiello, Y. Wu, A. Pandey, P. Wang, W. Lee, D. Bayerl, N. Sanders, Z. Deng, J. Gim, K. Sun, R. Hovden, E. Kioupakis, Z. Mi, and P. Bhattacharya, Nano Lett. 19, 7852 (2019).
  • Z. Wang, H. Sun, Q. Zhang, J. Feng, J. Zhang, Y. Li, and C.Z. Ning, Light Sci. Appl. 9, 39 (2020).
  • S. Zhao, X. Liu, Y. Wu, and Z. Mi, Appl. Phys. Lett. 109 (2016).
  • X. Liu, Y. Wu, Y. Malhotra, Y. Sun, and Z. Mi, Appl. Phys. Lett. 117 (2020).
  • D. Bayerl, and E. Kioupakis, Appl. Phys. Lett. 115 (2019).
  • A. Pandey, J. Min, M. Reddeppa, Y. Malhotra, Y. Xiao, Y. Wu, K. Sun, and Z. Mi, Nano Lett. 23, 1680 (2023).
  • Y. Wu, D.A. Laleyan, Z. Deng, C. Ahn, A.F. Aiello, A. Pandey, X. Liu, P. Wang, K. Sun, E. Ahmadi, Y. Sun, M. Kira, P.K. Bhattacharya, E. Kioupakis, and Z. Mi, Adv. Electron. Mater. 6, 2000337 (2020).
  • X. Liu, Y. Sun, Y. Malhotra, Y. Wu, and Z. Mi, Opt. Express 29, 32826 (2021).
  • S. Rajbhandari, J.J.D. McKendry, J. Herrnsdorf, H. Chun, G. Faulkner, H. Haas, I.M. Watson, D. O’Brien, and M.D. Dawson, Semicond. Sci. Technol. 32, 023001 (2017).
  • A.A. Setlur, V.R. Emil, S.H. Claire, J.-H. Her, M.S. Alok, N. Karkada, M. Satya Kishore, N. Prasanth Kumar, D. Aesram, A. Deshpande, B. Kolodin, S.G. Ljudmil, and U. Happek, Chem. Mater. 22, 4076 (2010).
  • C. Sommer, P. Hartmann, P. Pachler, H. Hoschopf, and F.P. Wenzl, J. Alloys Compd. 520, 146 (2012).
  • R. Haitz, and J.Y. Tsao, Phys. Status Solidi Appl. Mater. Sci. 208, 17 (2011).
  • C. Kölper, M. Sabathil, M. Mandl, M. Strassburg, and B. Witzigmann, J. Light. Technol. 30, 2853 (2012).
  • D. Xue, C. Ruan, Y. Zhang, H. Chen, X. Chen, C. Wu, C. Zheng, H. Chen, and W.W. Yu, Nanotechnology 29, 455708 (2018).
  • H. Chun, P. Manousiadis, S. Rajbhandari, D.A. Vithanage, G. Faulkner, D. Tsonev, J.J.D. McKendry, S. Videv, E. Xie, E. Gu, M.D. Dawson, H. Haas, G.A. Turnbull, I.D.W. Samuel, and D.C. O’Brien, IEEE Photonics Technol. Lett. 26, 2035 (2014).
  • N.C. George, K.A. Denault, and R. Seshadri, Annu. Rev. Mater. Res. 43, 481 (2013).
  • G. Meneghesso, M. Meneghini, and E. Zanoni, J. Phys. D. Appl. Phys. 43, 354007 (2010).
  • S. Mei, X. Liu, W. Zhang, R. Liu, L. Zheng, R. Guo, and P. Tian, ACS Appl. Mater. Interfaces 10, 5641 (2018).
  • Z. Tian, P. Tian, X. Zhou, G. Zhou, S. Mei, W. Zhang, X. Zhang, D. Li, D. Zhou, R. Guo, S. Qu, and A.L. Rogach, Nanoscale 11, 3489 (2019).
  • R. Wan, X. Gao, L. Wang, S. Zhang, X. Chen, Z. Liu, X. Yi, J. Wang, J. Li, W. Zhu, and J. Li, Photonics Res. 8, 1110 (2020).
  • H. Cao, S. Lin, Z. Ma, X. Li, J. Li, and L. Zhao, IEEE Electron Device Lett. 40, 267 (2019).
  • Y.J. Hong, C.-H. Lee, A. Yoon, M. Kim, H.-K. Seong, H.J. Chung, C. Sone, Y.J. Park, and G.-C. Yi, Adv. Mater. 23, 3224 (2011).
  • H.W. Lin, Y.J. Lu, H.Y. Chen, H.M. Lee, and S. Gwo, Appl. Phys. Lett. 97, 073101 (2010).
  • B. Damilano, N. Grandjean, C. Pernot, and J. Massies, Jpn. J. Appl. Phys. 40, L918 (2001).
  • M. Yamada, Y. Narukawa, and T. Mukai, Jpn. J. Appl. Phys. 41, L246 (2002).
  • S.-C. Shei, J.-K. Sheu, C.-M. Tsai, W.-C. Lai, M.-L. Lee, and C.-H. Kuo, Jpn. J. Appl. Phys. 45, 2463 (2006).
  • X.H. Wang, H.Q. Jia, L.W. Guo, Z.G. Xing, Y. Wang, X.J. Pei, J.M. Zhou, and H. Chen, Appl. Phys. Lett. 91, 161912 (2007).
  • H. Li, P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, and G. Wang, Appl. Phys. Express 6, 102103 (2013).
  • E. Jang, S. Jun, H. Jang, J. Lim, B. Kim, and Y. Kim, Adv. Mater. 22, 3076 (2010).
  • J.H. Oh, S.J. Yang, and Y.R. Do, Light Sci. Appl. 3, e141 (2014).
  • E.F. Schubert, and J.K. Kim, Science (80-.) 308, 1274 (2005).
  • W. Bin Im, N. George, J. Kurzman, S. Brinkley, A. Mikhailovsky, J. Hu, B.F. Chmelka, S.P. Denbaars, and R. Seshadri, Adv. Mater. 23, 2300 (2011).
  • T. Honda, T. Kobayashi, S. Egawa, M. Sawada, K. Sugimoto, and T. Baba, J. Cryst. Growth 298, 736 (2007).
  • E.F. Schubert, Light-Emitting Diodes, Second Edition (Cambridge University Press, 2006).
  • A. Yanagihara, S. Ishizawa, and K. Kishino, Appl. Phys. Express 7, 112102 (2014).
  • H. Sekiguchi, K. Kishino, and A. Kikuchi, Appl. Phys. Lett. 96, 231104 (2010).
  • S. Albert, A. Bengoechea-Encabo, X. Kong, M.A. Sanchez-Garcia, E. Calleja, and A. Trampert, Appl. Phys. Lett. 102, 181103 (2013).
  • T. Yokota, P. Zalar, M. Kaltenbrunner, H. Jinno, N. Matsuhisa, H. Kitanosako, Y. Tachibana, W. Yukita, M. Koizumi, and T. Someya, Sci. Adv. 2 (2016).
  • T. Someya, Z. Bao, and G.G. Malliaras, Nature 540, 379 (2016).
  • J. Jeong, J. Jeong, Q. Wang, J. Cha, J. Cha, D.K. Jin, D.K. Jin, D.H. Shin, S. Kwon, B.K. Kang, J.H. Jang, W.S. Yang, Y.S. Choi, J. Yoo, J.K. Kim, C.H. Lee, S.W. Lee, A. Zakhidov, S. Hong, S. Hong, M.J. Kim, M.J. Kim, M.J. Kim, Y.J. Hong, and Y.J. Hong, Sci. Adv. 6 (2020).
  • C.H. Yang, B.H. Chen, J.X. Zhou, Y.M. Chen, and Z.G. Suo, Adv. Mater. 28, 4480 (2016).
  • J.X. Wang, C.Y. Yan, G.F. Cai, M.Q. Cui, A.L.S. Eh, and P.S. Lee, Adv. Mater. 28, 4490 (2016).
  • F.M. Kochetkov, V. Neplokh, V.A. Mastalieva, S. Mukhangali, A.A. Vorob’ev, A.V. Uvarov, F.E. Komissarenko, D.M. Mitin, A. Kapoor, J. Eymery, N. Amador-Mendez, C. Durand, D. Krasnikov, A.G. Nasibulin, M. Tchernycheva, and I.S. Mukhin, Nanomaterials 11, 1503 (2021).
  • A. Chortos, J. Liu, and Z. Bao, Nat. Mater. 15, 937 (2016).
  • C.M. Zgierski-Johnston, S. Ayub, M.C. Fernández, E.A. Rog-Zielinska, F. Barz, O. Paul, P. Kohl, and P. Ruther, Prog. Biophys. Mol. Biol. 154, 51 (2020).
  • Y. Huang, E.L. Hsiang, M.Y. Deng, and S.T. Wu, Light Sci. Appl. 9, 105 (2020).
  • M. Alonso-Orts, R. Hötzel, T. Grieb, M. Auf der Maur, M. Ries, F. Nippert, B. März, K. Müller-Caspary, M.R. Wagner, A. Rosenauer, and M. Eickhoff, Discov. Nano. 18, 27 (2023).
  • L. Dvoretckaia, V. Gridchin, A. Mozharov, A. Maksimova, A. Dragunova, I. Melnichenko, D. Mitin, A. Vinogradov, I. Mukhin, and G. Cirlin, Nanomaterials 12, 1993 (2022).
  • C. Zhao, T.K. Ng, R.T. Elafandy, A. Prabaswara, G.B. Consiglio, I.A. Ajia, I.S. Roqan, B. Janjua, C. Shen, J. Eid, A.Y. Alyamani, M.M. El-Desouki, and B.S. Ooi, Nano Lett. 16, 4616 (2016).
  • S. Zhang, A.T. Connie, D.A. Laleyan, H.P.T. Nguyen, Q. Wang, J. Song, I. Shih, and Z. Mi, IEEE J. Quantum Electron. 50, 483 (2014).
  • S.M. Sadaf, Y.H. Ra, H.P.T. Nguyen, M. Djavid, and Z. Mi, Nano Lett. 15, 6696 (2015).
  • M. Tchernycheva, A. Messanvi, A. De Luna Bugallo, G. Jacopin, P. Lavenus, L. Rigutti, H. Zhang, Y. Halioua, F.H. Julien, J. Eymery, and C. Durand, Nano Lett. 14, 3515 (2014).
  • H.P.T. Nguyen, Q. Wang, and Z. Mi, J. Electron. Mater. 43, 868 (2014).
  • Y. Park, S. Jahangir, Y. Park, P. Bhattacharya, and J. Heo, Opt. Express 23, A650 (2015).
  • X. Luo, W. Song, F. Gao, J. Shi, C. Cheng, J. Guo, L. He, Q. Liu, Y. Yang, S. Li, and Q. Wu, Adv. Eng. Mater. 23, 2001430 (2021).
  • K.H. Li, W.Y. Fu, and H.W. Choi, Prog. Quantum Electron. 70, 100247 (2020).

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.