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MATERIALS PHYSICS AND CHMISTRY

Studies on Quantification Analysis of Thin Film Layers (Si3N4, SiO2, and TiW) in Wafer Fabrication Using Energy-Dispersive X-Ray Microanalysis Technique and SEC Factors

Pages 25-34 | Received 15 Apr 2002, Accepted 27 Jun 2002, Published online: 24 Jun 2008

References

  • Hua , Y.N. , Guo , Z.R. and Chau , K.W. 1997 . Studies of ZAF standardless EDX quantification method and application in failure analysis of semiconductor . J. Trace Microprobe Techn. , 15 ( 1 ) : 13 – 31 .
  • Hua , Y.N. 1999 . Studies of EDX ZAF Quantification Method and Characterization of EDX Function in LEO 982 FESEM Equipment . The Proceedings from the SEMICON Singapore 1999-Technical Symposium . May 3–6 1999 . pp. 207 – 211 .
  • Pouchou , J.L. 1994 . Standardless X-ray analysis of bulk specimens . Mikrochim. Acta , 114/115 : 33 – 52 .
  • Dijkstra , J.M. and Shen , R.B. 1999 . Standardless Quantification of Conductive Oxides in the SEM 1 – 2 . the Netherlands : EDAX International . P.O. Box 4144, NL-5004 JC Tilburg
  • Hans Dijkstra . Feb 1999 . EDAX Tips for EDX Users TIP NR Feb , 1 – 3 . the Netherlands EDAX Europe Ringbaan Noord 103 P.O. Box 4144, NL-5004 JC Tilburg

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